ATP301-TL-H

Ordering number : ENA1457A ATP301 P-Channel Power MOSFET http://onsemi.com –100V, –28A, 75mΩ, ATPAK Features • • ON-resistance RDS(on)=57mΩ (typ.) 10V drive • • Input capacitance Ciss=4000pF (typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit --100 PW≤10μs, duty cycle≤1% V --28 A --112 A 70 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 54 mJ --28 A Avalanche Current *2 Tc=25°C V ±20 Note : *1 VDD=--30V, L=100μH, IAV=--28A *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP301-TL-H 1.5 6.5 Marking ATP301 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 3 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 1 0.8 1.7 2,4 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 62712 TKIM/42209QA MS IM TC-00001941 No. A1457-1/7 ATP301 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min ID=--1mA, VGS=0V VDS=--100V, VGS=0V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--14A Static Drain-to-Source On-State Resistance RDS(on) ID=--14A, VGS=--10V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance typ Unit max --100 V --2.0 --1 μA ±10 μA --3.5 32 V S 57 75 mΩ 4000 pF 270 pF Crss 150 pF Turn-ON Delay Time td(on) 32 ns Rise Time tr 130 ns Turn-OFF Delay Time td(off) 330 ns Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=--60V, VGS=--10V, ID=--28A Switching Time Test Circuit 0V --10V VDS=--20V, f=1MHz 190 ns 73 nC 16 nC 14 IS=--28A, VGS=0V nC --1.0 --1.5 V Avalanche Resistance Test Circuit VDD= --60V VIN L ≥50Ω RG ID= --14A RL=4.3Ω VIN D PW=10μs D.C.≤1% VOUT ATP301 0V --10V G VDD 50Ω ATP301 P.G 50Ω S Ordering Information Device ATP301-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1457-2/7 ATP301 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Single pulse ID= --14A 160 140 120 Tc=75°C 80 25°C 60 --25°C 40 20 0 --2 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V °C 25 C 5° --2 = Tc °C 75 10 7 5 3 2 1.0 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain Current, ID -- A 5 VDD= --60V VGS= --10V 7 5 td(off) 2 tf 100 7 tr 5 td(on) 3 25°C 5°C 14A 100 = -, ID V 0 1 80 = -V GS 60 40 20 0 --25 25 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 IT14598 75 100 125 150 IT14595 IS -- VSD --10 7 5 3 2 0 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V --1.2 IT14597 Ciss, Coss, Crss -- VDS 10000 f=1MHz 7 5 Ciss 3 2 1000 7 5 Coss 3 2 2 50 VGS=0V Single pulse Crss 2 10 --0.1 C Tc= 7 120 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 Ciss, Coss, Crss -- pF 3 --6 IT14593 140 IT14596 SW Time -- ID 1000 Switching Time, SW Time -- ns 3 --5 Single pulse --100 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 --4 Case Temperature, Tc -- °C 5 2 --3 RDS(on) -- Tc 0 --50 --10 VDS= --10V 7 --2 Cutoff Voltage, VGS(off) -- V IT14594 | yfs | -- ID 100 --1 160 180 100 0 IT14592 RDS(on) -- VGS 200 0 --4.5 --5.0 5°C --0.5 --1.0 Tc= 7 0 25 °C --10 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 --20 --25° C VGS= --4.0V --10 --30 25°C 0V 0. --4.5V --20 --40 --25 ° Drain Current, ID -- A --50 --40 --30 VDS= --10V 75°C 0V . --6 .0V --8 --1 Drain Current, ID -- A --50 ID -- VGS(off) --60 Tc=25°C Tc= --25° C ID -- VDS --60 100 7 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT14599 No. A1457-3/7 ATP301 VGS -- Qg --10 VDS= --60V ID= --28A --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 --7 --6 --5 --4 --3 --1 0 10 20 30 40 50 60 Total Gate Charge, Qg -- nC PD -- Tc 80 60 50 40 30 20 10 0 20 40 60 80 100 PW≤10μs 10 μs 10 0 μ 1m s 10 s 10 ms DC 0 ms op era tio n ID= --28A --10 7 5 3 2 --1.0 7 5 3 2 Operation in this area is limited by RDS(on). 120 Case Temperature, Tc -- °C 140 160 IT14602 2 3 5 7 --10 2 3 5 7--100 2 IT14601 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 70 0 --100 7 5 3 2 IT14600 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 80 70 IDP= --112A --0.1 7 5 3 Tc=25°C 2 Single pulse --0.01 2 3 5 7 --1.0 --0.1 --2 0 ASO 3 2 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT14603 No. A1457-4/7 ATP301 Taping Specification ATP301-TL-H No. A1457-5/7 ATP301 Outline Drawing ATP301-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1457-6/7 ATP301 Note on usage : Since the ATP301 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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