BAS16LT1

BAS16LT1 Preferred Device Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 75 200 500 Unit Vdc mAdc mAdc 3 CATHODE 1 ANODE http://onsemi.com Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3 1 2 MARKING DIAGRAM A6 M G 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit SOT−23 CASE 318 STYLE 8 A6 M G = Specific Device Code = Date Code = Pb−Free Package ORDERING INFORMATION Device BAS16LT1 BAS16LT1G BAS16LT3 BAS16LT3G Package SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel 10000/Tape & Reel 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 January, 2006 − Rev. 5 Publication Order Number: BAS16LT1/D BAS16LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 mAdc) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 W) Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W) IR − − − V(BR) VF − − − − CD VFR trr QS − − − − 715 855 1000 1250 2.0 1.75 6.0 45 pF Vdc ns pC 75 1.0 50 30 − Vdc mV mAdc Symbol Min Max Unit 820 W +10 V 2.0 k 100 mH 0.1 mF D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE VR 90% IR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 mF tr 10% tp t IF trr t Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 BAS16LT1 100 IF, FORWARD CURRENT (mA) TA = 85°C 10 TA = −40°C IR , REVERSE CURRENT (μA) 10 TA = 150°C TA = 125°C 1.0 0.1 TA = 85°C TA = 55°C 1.0 TA = 25°C 0.01 TA = 25°C 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2 0.001 Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD, DIODE CAPACITANCE (pF) 0.64 0.60 0.56 0.52 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 3 BAS16LT1 PACKAGE DIMENSIONS SOT−23 (TO−236)] CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 D 3 SEE VIEW C E 1 2 HE c b e q 0.25 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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