BAS16TT1
Preferred Device
Silicon Switching Diode
Features
• Pb−Free Package is Available*
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MAXIMUM RATINGS (TA = 25°C)
Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol VR IF IFM(surge) Max 75 200 500 Unit V mA mA
3 CATHODE
1 ANODE
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation, FR−4 Board (Note 1) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation, FR−4 Board (Note 2) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad Symbol PD 225 1.8 RqJA PD 360 2.9 RqJA TJ, Tstg 345 −55 to +150 mW 555 mW mW/°C °C/W Max Unit
3 2 1
CASE 463 SOT−416 STYLE 2
MARKING DIAGRAM
A6 mW/°C °C/W °C
ORDERING INFORMATION
Device BAS16TT1 BAS16TT1G Package SOT−416 SOT−416 (Pb−Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
May, 2004 − Rev. 2
Publication Order Number: BAS16TT1/D
BAS16TT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mA, RL = 50 W) (Figure 1) Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 W) (Figure 2) Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) Symbol VF − − − − IR − − − CD trr QS VFR − − − − 1.0 50 30 2.0 6.0 45 1.75 pF ns PC V 715 866 1000 1250 mA Min Max Unit mV
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BAS16TT1
1 ns MAX t 10% tif trr 50 W DUTY CYCLE = 2% VF 90% Irr 100 ns 500 W DUT
Figure 1. Reverse Recovery Time Equivalent Test Circuit
OSCILLOSCOPE R . 10 MW C 3 7 pF
VC 20 ns MAX t 10%
500 W VCM
DUT D1
BAW62 243 pF 100 KW
Qa VCM + C
DUTY CYCLE = 2%
Vf
90% 400 ns
t
Figure 2. Stored Charge Equivalent Test Circuit
120 ns V 90%
V 1 KW 450 W
Vfr 10% t
DUT
50 W
DUTY CYCLE = 2% 2 ns MAX
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
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BAS16TT1
100 IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (mA) 10 TA = 150°C TA = 125°C
1.0
10 TA = 85°C TA = 25°C TA = −40°C
0.1
TA = 85°C TA = 55°C
1.0
0.01 TA = 25°C 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50
0.1
0.2
0.4
0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS)
1.2
0.001
Figure 4. Forward Voltage
Figure 5. Leakage Current
0.68 CD, DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5 0.2 0.1 0.05 0.02
0.1
0.01
0.01 SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1 t, TIME (s)
1.0
10
100
1000
Figure 7. Normalized Thermal Response
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BAS16TT1
PACKAGE DIMENSIONS SC−416/SC−90/SOT−75 CASE 463−01 ISSUE C
−A− S
2 3
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D G H J K L S MILLIMETERS MIN MAX 0.70 0.90 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC −−− 0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC INCHES MIN MAX 0.028 0.035 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC −−− 0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC
G −B−
1
D 3 PL 0.20 (0.008)
M
B K
0.20 (0.008) A
J
C L H
STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE
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BAS16TT1
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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BAS16TT1/D
