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BAS16WT1

BAS16WT1

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOT-323-3

  • 描述:

    RECTIFIER DIODE

  • 数据手册
  • 价格&库存
BAS16WT1 数据手册
BAS16WT1 Preferred Device Silicon Switching Diode Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS (TA = 25°C) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range Symbol VR IR IFM(surge) Value 75 200 500 Unit V mA mA 3 CATHODE 1 ANODE 3 MARKING DIAGRAM PD 200 1.6 mW mW/°C °C 1 2 A6D TJ, Tstg −55 to +150 SC−70 CASE 419 STYLE 2 A6 D = Specific Device Code = Date Code Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package SC−70 SC−70 (Pb−Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Symbol RqJA Max 625 Unit °C/W BAS16WT1 BAS16WT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 1 June, 2005− Rev. 6 Publication Order Number: BAS16WT1/D BAS16WT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mA, RL = 50 W) (Figure 1) Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 W) (Figure 2) Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) Symbol VF − − − − IR − − − CD trr QS VFR − − − − 1.0 50 30 2.0 6.0 45 1.75 pF ns PC V 715 866 1000 1250 mA Min Max Unit mV http://onsemi.com 2 BAS16WT1 1 ns MAX t 10% tif trr 50 W DUTY CYCLE = 2% VF 90% Irr 100 ns 500 W DUT Figure 1. Reverse Recovery Time Equivalent Test Circuit OSCILLOSCOPE R . 10 MW C 3 7 pF VC 20 ns MAX t 10% 500 W VCM DUT D1 BAW62 243 pF 100 KW Qa VCM + C DUTY CYCLE = 2% Vf 90% 400 ns t Figure 2. Stored Charge Equivalent Test Circuit 120 ns V 90% V 1 KW 450 W Vfr 10% t DUT 50 W DUTY CYCLE = 2% 2 ns MAX Figure 3. Forward Recovery Voltage Equivalent Test Circuit http://onsemi.com 3 BAS16WT1 100 IR , REVERSE CURRENT (μA) IF, FORWARD CURRENT (mA) 10 TA = 150°C TA = 125°C 1.0 10 TA = 85°C TA = 25°C TA = −40°C 0.1 TA = 85°C TA = 55°C 1.0 0.01 TA = 25°C 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2 0.001 Figure 4. Forward Voltage Figure 5. Leakage Current 0.68 CD, DIODE CAPACITANCE (pF) 0.64 0.60 0.56 0.52 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance http://onsemi.com 4 BAS16WT1 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE L A L 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D G H J K L N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 S 1 2 B D G C 0.05 (0.002) N K J STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE H SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 BAS16WT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 BAS16WT1/D
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