BAS16XV2T1_10

BAS16XV2T1 Switching Diode • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn (Tin) Qualified Reflow Temperature: 260°C Extremely Small SOD−523 Package http://onsemi.com Symbol VR IF IFM(surge) IFRM IFSM 4.0 1.0 0.5 Value 75 200 500 500 Unit V mA mA mA A 1 SOD−523 CASE 502 PLASTIC 2 1 CATHODE 2 ANODE Rating Continuous Reverse Voltage Continuous Forward Current Peak Forward Surge Current Repetitive Peak Forward Current Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 1 ms t=1s MAXIMUM RATINGS MARKING DIAGRAM A6 MG G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1. FR-5 Minimum Pad. Symbol PD Max 200 1.57 RθJA TJ, Tstg 635 −55 to 150 Unit mW mW/°C °C/W °C A6 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BAS16XV2T1 BAS16XV2T1G BAS16XV2T5G Package SOD−523 SOD−523 (Pb−Free) SOD−523 (Pb−Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel 8000/Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 75 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 mA) Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) Reverse Recovery Time (IF = IR = 10 mA, RL = 50 Ω) Stored Charge (IF = 10mA to VR = 5.0V, RL = 500 Ω) IR − − − 75 1.0 50 30 − mA †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. V(BR) VF V mV − − − − − − − − 715 855 1000 1250 2.0 1.75 6.0 45 pF V ns pC CD VFR trr QS © Semiconductor Components Industries, LLC, 2010 September, 2010 − Rev. 5 1 Publication Order Number: BAS16XV2T1/D BAS16XV2T1 820 Ω +10 V 2.0 k 100 μH 0.1 μF D.U.T. 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 μF tr 10% tp t IF trr t Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 IF, FORWARD CURRENT (mA) TA = 85°C 10 TA = - 40°C IR , REVERSE CURRENT (μA) 10 TA = 150°C 1.0 TA = 125°C TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 1.0 TA = 25°C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2 0.001 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD, DIODE CAPACITANCE (pF) 0.64 0.60 0.56 0.52 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 2 BAS16XV2T1 PACKAGE DIMENSIONS SOD−523 CASE 502−01 ISSUE C −X− A −Y− B 1 D 2 PL 0.08 (0.003) M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN NOM MAX 1.10 1.20 1.30 0.70 0.80 0.90 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 0.15 0.20 0.25 1.50 1.60 1.70 INCHES NOM MAX 0.047 0.051 0.032 0.035 0.024 0.028 0.012 0.014 0.0055 0.0079 0.008 0.010 0.063 0.067 2 TXY C K S −T− SEATING PLANE DIM A B C D J K S MIN 0.043 0.028 0.020 0.010 0.0028 0.006 0.059 J SOLDERING FOOTPRINT* 1.40 0.0547 0.40 0.0157 0.40 0.0157 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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