BAS21HT3G

High Voltage Switching Diode BAS21H Features • NSV Prefix for Automotive and Other Applications Requiring • www.onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Repetitive Peak Reverse Voltage Peak Forward Current Repetitive Peak Forward Current Non−Repetitive Peak Forward Surge Current, 60 Hz Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 10 ms t = 100 ms t = 1 ms t=1s Symbol Value Unit VR 250 V VRRM 250 V IF 200 mA IFRM 500 mA IFSM(surge) 2.5 A IFSM A 20 20 10 4 1 Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 200 mW 1.57 mW/°C Junction and Storage Temperature Range RqJA RqJL RqJT 635 240 436 TJ, Tstg −55 to +150 °C/W °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 Minimum Pad © Semiconductor Components Industries, LLC, 2016 June, 2020 − Rev. 14 1 2 ANODE MARKING DIAGRAM 2 SOD−323 CASE 477 STYLE 1 1 JS M G THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient Junction−to−Lead Junction−to−Top 1 CATHODE JS M G G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† BAS21HT1G, NSVBAS21HT1G SOD−323 (Pb−Free) 3000 / Tape & Reel BAS21HT3G, NSVBAS21HT3G SOD−323 (Pb−Free) 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAS21HT1/D BAS21H ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max − − 0.1 100 250 − − − 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) IR Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) mAdc Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 W) trr − 50 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE iR(REC) = 3.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 BAS21H TYPICAL CHARACTERISTICS TA = −55°C 1000 25°C 800 REVERSE CURRENT (nA) FORWARD VOLTAGE (mV) 1200 155°C 600 400 200 1 1 10 100 7000 6000 5000 4000 3000 4 3 2 TA = 25°C TA = −55°C 1 2 5 10 20 50 100 FORWARD CURRENT (mA) REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage 200 300 25 1.0 0.9 Based on square wave currents TJ = 25°C prior to surge 20 0.8 0.7 IFSM (A) Cd, DIODE CAPACITANCE (pF) 6 5 1 0 1000 TA = 155°C 0.6 15 10 0.5 5 0.4 0.3 0 1 2 3 4 5 6 7 0 8 0.001 0.01 0.1 1 VR, REVERSE VOLTAGE (V) Tp (mSec) Figure 4. Diode Capacitance Figure 5. Maximum Non−repetitive Peak Forward Current as a Function of Pulse Duration, Typical Values www.onsemi.com 3 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 2 1 STYLE 1 SOD−323 CASE 477−02 ISSUE H 2 SCALE 4:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E A3 A C NOTE 3 DATE 13 MAR 2007 1 STYLE 2 L A1 NOTE 5 MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* XX M 0.63 0.025 STYLE 1 0.83 0.033 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DESCRIPTION: 98ASB17533C SOD−323 STYLE 2 XX = Specific Device Code M = Date Code 1.60 0.063 DOCUMENT NUMBER: XX M STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE STYLE 2: NO POLARITY Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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