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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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BAS21
General-Purpose High Voltage Diode
CONNECTION DIAGRAM
3
3
3
A82.
2
SOT-23
1
2
1
2 NC
1
Ordering Information
Part Number
Top Mark
Package
Packing Method
BAS21
A82.
SOT-23 3L
Tape and Reel
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
WIV
Parameter
Value
Unit
Working Inverse Voltage
250
V
IO
Average Rectified Current
200
mA
IF
DC Forward Current
600
mA
if
Recurrent Peak Forward Current
700
mA
if(surge)
Peak Forward Surge Current
TSTG
Storage Temperature Range
TJ
Operating Junction Temperature
Pulse Width = 1.0 second
1.0
Pulse Width = 1.0 microsecond
2.0
A
-55 to +150
C
150
C
Notes:
1. These ratings are based on a maximum junction temperature of 150C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1999 Fairchild Semiconductor Corporation
BAS21 Rev. 1.3
www.fairchildsemi.com
BAS21 — General-Purpose High Voltage Diode
May 2016
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RJA
Parameter
Max.
Unit
Total Device Dissipation
350
mW
Derate Above 25C
2.8
mW/C
Thermal Resistance, Junction-to-Ambient
357
C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
BV
Breakdown Voltage
IR
Reverse Voltage Leakage Current
Conditions
IR = 100 A
Min.
Max.
250
Unit
V
VR = 200 V
100
nA
VR = 200 V, TA = 150°C
100
A
IF = 100 mA
1.0
V
IF = 200 mA
1.25
V
VF
Forward Voltage
CO
Diode Capacitance
VR = 0, f = 1.0 MHz
5.0
pF
Reverse Recovery Time
IF = IR = 30 mA, IRR = 3.0 mA,
RL = 100
50
nS
TRR
© 1999 Fairchild Semiconductor Corporation
BAS21 Rev. 1.3
www.fairchildsemi.com
2
BAS21 — General-Purpose High Voltage Diode
Thermal Characteristics
IR - REVERSE CURRENT (nA)
VVRR - REVERSE VOLTAGE (V)
325
Ta= 25°C
300
275
3
5
10
20
30
50
I R - REVERSE CURRENT (uA)
40
30
20
10
0
55
Figure 2. Reverse Current vs. Reverse Voltage
IR - 55 to 205 V
Ta= 25°C
Ta= 25°C
450
80
400
70
60
350
50
40
300
30
20
180
200
220
240
VR - REVERSE VOLTAGE (V)
250
255
1
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten Degree C increase in Temperature
Figure 3. Reverse Current vs. Reverse Voltage
IR - 180 to 255 V
2
3
5
10
20 30
50
IF - FORWARD CURRENT (uA)
100
Figure 4. Forward Voltage vs. Forward Current
VF - 1.0 to 100 A
725
Ta= 25°C
700
FORWARD VOLTAGE (V)
1.4
Ta= 25°C
1.3
650
1.2
600
1.1
550
1
0.9
500
F
0.8
450
0.1
VF
VVF F - FORWARD VOLTAGE (mV)
75
95
115 135 155 175 195
V R - REVERSE VOLTAGE (V)
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
V
VFF - FORWARD VOLTAGE (mV)
IIRR - REVERSE CURRENT (nA)
90
Ta= 25°C
100
Figure 1. Reverse Voltage vs. Reverse Current
BV - 1.0 to 100 A
100
50
0.2 0.3 0.5
1
2
3
5
I F - FORWARD CURRENT (mA)
10
Figure 5. Forward Voltage vs. Forward Current
VF - 0.1 to 10 mA
© 1999 Fairchild Semiconductor Corporation
BAS21 Rev. 1.3
0.7
10
20
30
50
100
200 300
IF - FORWARD CURRENT (mA)
500
800
Figure 6. Forward Voltage vs. Forward Current
VF - 10 to 800 mA
www.fairchildsemi.com
3
BAS21 — General-Purpose High Voltage Diode
Typical Performance Characteristics
VVFF - FORWARD VOLTAGE (mV)
1.3
CAPACITANCE (pF)
800
Ta= -40°C
600
Ta= 25°C
400
Ta= +80°C
Ta= 25°C
1.2
1.1
1
0.9
200
0.8
0.001 0.003 0.01 0.03 0.1 0.3
1
I F - FORWARD CURRENT (mA)
3
10
500
50
40
30
20
IF = IR = 30 mA
Rloop = 100 Ohms
1
1.5
2
2.5
Irr - REVERSE RECOVERY CURRENT (mA)
2
4
6
8
10
REVERSE VOLTAGE (V)
12
14 15
Figure 8. Capacitance vs. Reverse Voltage
I - CURRENT (mA)
REVERSE RECOVERY (nS)
Figure 7. Forward Voltage vs. Ambient Temperature
VF - 1.0 A - 10 mA (- 40 to +80C)
0
400
300
-F
OR
WA
RD
CU
RR
EN
TS
TE
AD
Y
Io - A
ST
VER
AT
AGE
E
REC
-m
TIFIE
D CU
A
RRE
NT mA
200
100
0
3
IR
0
50
100
150
o
TA - AMBIENT TEMPERATURE ( C)
Figure 10. Average Rectified Current(IO) and
Forward Current (IF) vs. Ambient Temperature(TA)
Figure 9. Reverse Recovery Time vs.
Reverse Recovery Current (Irr)
PD - POWER DISSIPATION (mW)
500
400
300
SOT-23 Pkg
200
100
0
0
50
100
150
IO - AVERAGE TEMPERATURE ( oC)
200
Figure 11. Power Derating Curve
© 1999 Fairchild Semiconductor Corporation
BAS21 Rev. 1.3
www.fairchildsemi.com
4
BAS21 — General-Purpose High Voltage Diode
Typical Performance Characteristics (Continued)
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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