BAS70LT1

BAS70L Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. www.onsemi.com Features • Extremely Fast Switching Speed • Low Forward Voltage • NSV Prefix for Automotive and Other Applications Requiring • 70 VOLTS SCHOTTKY BARRIER DIODES Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 CATHODE 3 MAXIMUM RATINGS (TJ = 150°C unless otherwise noted) Rating Forward Current Non−Repetitive Peak Forward Surge Current (t ≤ 1.0 s) Reverse Voltage 1 ANODE 1 Symbol Value Unit IF 70 mA IFSM 100 mA VR 70 V Symbol Max Unit 225 1.8 mW mW/°C 2 SOT−23 (TO−236) CASE 318 STYLE 8 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Forward Power Dissipation @ TA = 25°C Derate above 25°C Thermal Resistance − Junction−to−Ambient (Note 1) (Note 2) Operating Junction and Storage Temperature Range PF RqJA TJ, Tstg BE M G G 1 BE M G °C/W 508 311 Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 @ minimum pad. 2. FR−4 @ 1.0 x 1.0 in pad. *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BAS70LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel NSVBAS70LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1997 November, 2018 − Rev. 11 1 Publication Order Number: BAS70LT1/D BAS70L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Reverse Breakdown Voltage (IR = 10 μA) V(BR)R Total Capacitance (VR = 0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 50 V) (VR = 70 V) IR Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 15 mA) VF Min Max 70 − − 2.0 − − 0.1 10 − − − 410 750 1000 Unit V pF mA mV Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL CHARACTERISTICS IR , REVERSE CURRENT (μA) 100 10 1.0 150°C 125°C 0.1 0 0.1 TA = 150°C 10 125°C 1.0 85°C 0.1 0.01 -40°C 85°C 25°C 25°C -55°C 0.2 0.3 0.4 0.5 0.001 0.6 0.7 0.8 0.9 0 1.0 5.0 25 30 35 15 20 VR, REVERSE VOLTAGE (VOLTS) 10 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5.0 10 40 45 Figure 2. Reverse Current versus Reverse Voltage 1.4 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance www.onsemi.com 2 45 50 50 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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