BAS70SV
70 V Dual-Schottky Barrier Diodes
Features
•
•
•
•
•
•
•
•
Low Forward-Voltage Drop
Low Capacitance
Low Leakage Current
Fast Switching
Ultra-Small Surface-Mount Package
Lead Free by Design / RoHS Compliant
Green Compound
0.6mm Maximum Package Height
C1
A2
A1
C2
(Pin1)
SOT-563F
BAS70SV Marking : AD
ELECTRICAL SYMBOL
Note: Pinouts are symmetrical. Pin 1 & 4 are interchangeable.
The placement of the device in the carrier tape can be of either orientation.
Ordering Information
Part Number
Marking
Package
Packing Method
BAS70SV
AD
SOT-563F 6L
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Parameter
Units
VRRM
Maximum Repetitive Reverse Voltage
70
V
IF(AV)
Average Rectified Forward Current
70
mA
IFSM
Forward Surge Current (8.3mS Single Half Sine Wave)
TJ, TSTG
Operating Junction and Storage Temperature Range
2.5
A
-55 to +150
°C
Value
Units
200
mW
625
°C/W
Thermal Characteristics
Symbol
PD
RθJA
Parameter
Power Dissipation
Thermal Resistance, Junction to
Ambient(1)
Note:
1. Device mounted on board compliant to JESD51-2 and JESD51-3 standards.
© 2010 Fairchild Semiconductor Corporation
BAS70SV Rev. 1.1.0
www.fairchildsemi.com
1
BAS70SV — 70 V Dual-Schottky Barrier Diodes
June 2013
Values are at TA = 25°C unless otherwise noted.
Symbol
VBR
IR
Parameter
Breakdown Voltage
Reverse Current
Test Condition
IR = 100 μA
VR = 50 V
Min.
70
Typ.
Max.
Units
0.02
0.10
μA
2.5
μA
365
410
mV
93
VR = 70 V
IF = 1 mA
V
VF
Forward Voltage
IF = 15 mA
855
1000
mV
trr
Reverse-Recovery Time
IF = IR = 10 mA, Irr = 0.1 IR
1.55
8.00
ns
Capacitance
VR = 0 V, f = 1 MHz
1.62
3.00
pF
Cap
© 2010 Fairchild Semiconductor Corporation
BAS70SV Rev. 1.1.0
www.fairchildsemi.com
2
BAS70SV — 70 V Dual-Schottky Barrier Diodes
Electrical Characteristics
1000000
o
o
TA= 75 C
o
TA=150 C
100000
Reverse Current, IR[nA]
Forward Current, IF[mA]
100
o
TA= 125 C
TA= 150 C
o
TA= 25 C
10
10000
o
TA=125 C
1000
o
TA=75 C
100
10
o
TA=25 C
1
0.0
0.5
1.0
1.5
2.0
2.5
1
10
3.0
Forward Voltage, VF[V]
20
30
40
50
60
70
80
90
Reverse Voltage, VR[V]
Figure 1. Forward Current Characteristics
Figure 2. Reverse Leakage Current
1.8
f = 1MHz
Juntion Capacitance, CJ[pF]
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
2
4
6
8
10
Reverse Voltage, VR[V]
Figure 3. Junction Capacitance
© 2010 Fairchild Semiconductor Corporation
BAS70SV Rev. 1.1.0
www.fairchildsemi.com
3
BAS70SV — 70 V Dual-Schottky Barrier Diodes
Typical Performance Characteristics
BAS70SV — 70 V Dual-Schottky Barrier Diodes
Physical Dimensions
SOT-563F 6L
1.60
A
B
6
4
1.20
1.80
1.25
0.30
0.55
1.60
1
0.1 C B A
3
0.20
0.50
0.50
1.00
LAND PATTERN
RECOMMENDATION
TOP VIEW
0.60
0.50
0.50
C
0.20
0.08
0.05 C
0.10
0.00 C
SEATING PLANE
NOTES: UNLESS OTHERWISE SPECIFIED.
A. REFERENCE TO JEDEC MO293.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C
0.30
0.10
0.46
0.20
0.31
0.15
0.10 M
BOTTOM VIEW
0.05 M
C DOES NOT COMPLY JEDEC STANDARD VALUE.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSION.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. DRAWING FILE NAME: MAD06A REV2
C A B
C
Figure 4. 6-LEAD, MO293, 1.2 MM WIDE, SOT563F, DUAL DAP (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MAD06A_BK.pdf.
© 2010 Fairchild Semiconductor Corporation
BAS70SV Rev. 1.1.0
www.fairchildsemi.com
4
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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accordance with instructions for use provided in the labeling, can be
safety or effectiveness.
reasonably expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
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under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I64
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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