BAT54CXV3D

BAT54CXV3T1G Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features http://onsemi.com • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES 1 ANODE 2 ANODE 3 CATHODE MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Forward Current (DC) Non−Repetitive Peak Forward Current, tp < 10 msec Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% Junction Temperature Storage Temperature Range Thermal Resistance, Junction−to−Ambient (Note 1) Symbol VR PF Value 30 240 1.9 200 Max 600 300 Unit V mW mW/°C mA mA mA MARKING DIAGRAM 3 1 2 SC−89 CASE 463C STYLE 3 5CM G G 1 IF IFSM IFRM TJ Tstg RqJA − 55 to 125 − 55 to +150 525 °C °C °C/W 5C = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BAT54CXV3T1G Package SC−89 (Pb−Free) Shipping† 3000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 board with minimum mounting pad. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 August, 2010 − Rev. 2 1 Publication Order Number: BAT54CXV3/D BAT54CXV3T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Reverse Breakdown Voltage (IR = 10 mA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Symbol V(BR)R CT IR VF VF VF trr VF VF Min 30 − − − − − − − − Typ − 7.6 0.5 0.22 0.41 0.52 − 0.29 0.35 Max − 10 2.0 0.24 0.5 0.8 5.0 0.32 0.40 Unit V pF mAdc Vdc Vdc Vdc ns Vdc Vdc 820 W +10 V 2k 100 mH 0.1 mF DUT 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE 90% VR IR INPUT SIGNAL iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 mF tr 10% tp T IF trr T Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 BAT54CXV3T1G 100 IF, FORWARD CURRENT (mA) 1 25°C 85°C 10 1 50°C 1.0 25°C 0.1 0.0 − 40°C − 55°C 0.6 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage 1000 IR, REVERSE CURRENT (mA) 100 10 1.0 0.1 0.01 0.001 TA = 150°C TA = 125°C TA = 85°C TA = 25°C 0 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 Figure 3. Leakage Current 14 CT, TOTAL CAPACITANCE (pF) 12 10 8 6 4 2 0 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 3 BAT54CXV3T1G PACKAGE DIMENSIONS SC−89, 3−LEAD CASE 463C−03 ISSUE C A −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C−01 OBSOLETE, NEW STANDARD 463C−02. DIM A B C D G H J K L M N S SEATING PLANE MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 _ −−− −−− 10 _ 1.50 1.60 1.70 INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 BSC 0.021 REF 0.004 0.006 0.008 0.012 0.016 0.020 0.043 REF −−− −−− 10 _ −−− −−− 10 _ 0.059 0.063 0.067 MIN 0.059 0.030 0.024 0.009 3 1 2 B −Y− S K 2 PL G D 0.08 (0.003) M 3 PL XY M C J N −T− STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE SOLDERING FOOTPRINT* 0.53 0.020 0.53 0.020 1.10 0.043 0.50 0.020 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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