BAT54HT1G

BAT54H Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. www.onsemi.com Features • • • • • Extremely Fast Switching Speed Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc Device Marking: JV NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 30 VOLT SILICON HOT−CARRIER DETECTOR AND SWITCHING DIODES SOD−323 CASE 477 STYLE 1 MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Reverse Voltage Symbol Value Unit VR 30 V 1 CATHODE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD Forward Current (DC) IF Non−Repetitive Peak Forward Current, tp < 10 msec IFSM Repetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66% IFRM Thermal Resistance Junction−to−Ambient RqJA Junction and Storage Temperature Range Max Unit 200 1.57 mW mW/°C 200 Max mA mA 600 mA 300 TJ, Tstg 1 JV M G °C −55 to150 JVM G G 2 = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† BAT54HT1G SOD−323 (Pb−Free) 3,000 / Tape & Reel NSVBAT54HT1G SOD−323 (Pb−Free) 3,000 / Tape & Reel °C/W 635 2 ANODE †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. FR−4 Minimum Pad *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 7 1 Publication Order Number: BAT54HT1/D BAT54H ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage (IR = 10 μA) Min Typ Max 30 − − − 7.6 10 − 0.5 2.0 − − − − − 0.22 0.29 0.35 0.41 0.52 0.24 0.32 0.40 0.50 0.80 − − 5.0 V(BR)R Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 0.1 mA) (IF = 1.0 mA) (IF = 10 mA) (IF = 30 mA) (IF = 100 mA) VF Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 trr Unit V pF μAdc V ns 820 Ω +10 V 2k 100 μH 0.1 μF tr IF tp 0.1 μF t IF trr 10% t DUT 50 Ω Output Pulse Generator 50 Ω Input Sampling Oscilloscope 90% iR(REC) = 1 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 BAT54H IF, FORWARD CURRENT (mA) 100 1 50°C 10 1 25°C 1.0 85°C 25°C 0.1 0.0 0.2 0.1 −40°C 0.3 −55°C 0.4 0.5 0.6 VF, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Voltage 1000 IR, REVERSE CURRENT (μA) TA = 150°C 100 TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 TA = 25°C 0.001 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current CT, TOATAL CAPACITANCE (pF) 14 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance www.onsemi.com 3 25 30 BAT54H PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A1 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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