Description
Cathode Band
A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package.
Placement of the expansion gap has no relationship to
the location of the cathode terminal which is indicated by
the first color band.
SOD80
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
WIV
IO
IF
if
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
IFSM
Non-repetitive Peak Forward Current
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature
Pulse Width = 1.0 s
Pulse Width = 1.0 μs
Value
Units
200
200
500
600
1.0
4.0
-65 to +200
-65 to +200
V
mA
mA
mA
A
A
°C
°C
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD
RθJA
Parameter
Power Dissipation
Linear Derating Factor from TA = 25°C
Thermal Resistance, Junction to Ambient
© 2004 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
1
Value
Units
500
3.33
350
mW
mW/°C
°C/W
Publication Order Number:
BAV103/D
BAV103 — High Voltage, General Purpose Diode
BAV103
High Voltage, General Purpose Diode
Values are at TC = 25°C unless otherwise noted.
Symbol
VR
Parameter
Breakdown Voltage
VF
Forward Voltage
IR
Reverse Current
CT
Total Capacitance
trr
Reverse Recovery Time
Conditions
IR = 100 μA
IF = 100 mA
IF = 200 mA
VR = 200 V
VR = 200 V, TA = 150°C
VR = 0, f = 1.0 MHz
IF = IR = 30 mA, IRR = 1 mA
RL = 100 Ω
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2
Min.
Max.
Units
1.00
1.25
100
100
5.00
V
V
V
nA
μA
pF
50
ns
250
BAV103 — High Voltage, General Purpose Diode
Electrical Characteristics
Forward Current Derating Curve
Forward Characteristics
100
Average Rectified Forward Current, IF[A]
8
HEAT-SINK
MOUNTING, TC
4"x4"x0.15"
COPPER PLATE
6
10
4
TA = 25º C
1
2
FORWARD C
MOUNTED ON PC BOARD,
TA 0.5" (12.7mm) LEAD LENGTH
60Hz RESISTIVE OF INDUCTIVE LOAD
0
0
50
100
150
o
Ambient Temperature [ C]
Pulse Width = 300μs
1% Duty Cycle
0.1
0.7
Figure 1. Forward Current Derating Curve
0.8
0.9
1
1.1
1.2
FORWARD VOLTAGE (V)
1.3
1.4
Figure 2. Forward Charateristics
Reverse Characteristics
Non-Repetitive Surge Current
200
10
T C = 100 º C
160
1
120
80
0.1
T A = 105 º C
TA = 25 º C
40
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Figure 3. Reverse Characteristics
FORWAR
REVERSE C
0.01
0
Junction Capacitance
TA = 25º C
f = 1.0 MHz
Visg = 50m Vp-p
50
CAPACITANCE
10
1
5
10
REVERSE VOLTAGE (V)
50
2
5
10
20
50
NUMBER OF CYCLES AT 60Hz
100
Figure 4. Non-Repetitive Surge Current
400
100
1
100
Figure 5. Junction Capacitance
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3
BAV103 — High Voltage, General Purpose Diode
Typical Performance Characteristics
SOD-80
0.50
0.30
C
R
0.30
0.20
1.50
1.30
2.64 REF
3.60
3.30
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC DO-213, VARIATION AC.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C
CORNER RADIUS IS OPTIONAL.
D) DRAWING FILE NAME: SOD80A REV01
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BAV103 — High Voltage, General Purpose Diode
Physical Dimensions
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