BAV23CLT1G

Switching Diode, Dual, High Voltage, Common Cathode BAV23CL, NSVBAV23CL Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: Class 2 • • • • www.onsemi.com ESD Rating − Machine Model: Class C Fast Switching Speed Switching Application NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ANODE 1 3 CATHODE 2 ANODE 3 1 2 Typical Applications SOT−23 CASE 318 STYLE 9 • LCD TV • Power Supply • Industrial MARKING DIAGRAM MAXIMUM RATINGS 3 Rating Continuous Reverse Voltage Repetitive Peak Reverse Voltage Peak Forward Current Non−Repetitive Peak Forward Surge Current @ t = 1.0 s @ t = 100 s @ t = 10 ms Peak Forward Surge Current Non−Repetitive Peak Per Human Body Model Per Machine Model Symbol Value Unit VR 250 V VRRM 250 V IF 400 mA IFSM 9.0 3.0 1.7 A IFM(surge) 625 mAdc HBM MM 4.0 400 kV V AA MG G 1 2 AA = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Device Package Shipping† BAV23CLT1G SOT−23 (Pb−Free) 3000 / Tape & Reel BAV23CLT3G SOT−23 (Pb−Free) 10000 / Tape & Reel NSVBAV23CLT1G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 April, 2020 − Rev. 4 1 Publication Order Number: BAV23CLT1/D BAV23CL, NSVBAV23CL THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 265 2.1 mW mW/°C SINGLE HEATED Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) RJA 472 °C/W Thermal Reference, Junction−to−Anode Lead (Note 1) R_ψJL 263 °C/W Thermal Reference, Junction−to−Case (Note 1) R_ψJC 289 °C/W PD 345 2.7 mW mW/°C RJA 362 °C/W Thermal Reference, Junction−to−Anode Lead (Note 2) R_ψJL 251 °C/W Thermal Reference, Junction−to−Case (Note 2) R_ψJC 250 °C/W PD 390 3.1 mW mW/°C RJA 321 °C/W Thermal Reference, Junction−to−Anode Lead (Note 1) R_ψJL 159 °C/W Thermal Reference, Junction−to−Case (Note 1) R_ψJC 138 °C/W PD 540 4.3 mW mW/°C RJA 231 °C/W Thermal Reference, Junction−to−Anode Lead (Note 2) R_ψJL 148 °C/W Thermal Reference, Junction−to−Case (Note 2) R_ψJC 119 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Total Device Dissipation (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) DUAL HEATED (Note 3) Total Device Dissipation (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) 1. FR-4 @ 100 mm2, 1 oz. copper traces, still air. 2. FR-4 @ 500 mm2, 2 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max − − 0.1 100 250 − − − 1000 1250 Unit OFF CHARACTERISTICS IR Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) Reverse Breakdown Voltage (IBR = 100 Adc) V(BR) Adc Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CT − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 ) trr − 150 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 BAV23CL, NSVBAV23CL 100 Ir, REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 1 −40°C 0.1 0°C 25°C 0.01 75°C 125°C 150°C 0.001 0.2 0.6 0.4 0.8 1.0 1.2 125°C 1 75°C 0.1 25°C 0.01 0°C 0.001 0.0001 1.4 150°C 10 −40°C 0 50 100 150 200 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Reverse Current 250 CT, TOTAL CAPACITANCE (pF) 3.0 TA = 25°C f = 1 MHz 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 30 25 35 40 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance 820  +10 V 2.0 k 100 H tr 0.1 F IF tp t IF trr 10% t 0.1 F 90% D.U.T. 50  OUTPUT PULSE GENERATOR 50  INPUT SAMPLING OSCILLOSCOPE iR(REC) = 3.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 4. Recovery Time Equivalent Test Circuit www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 SCALE 4:1 GENERIC MARKING DIAGRAM* XXXMG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318 ISSUE AT DATE 01 MAR 2023 STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. CATHODE PIN 1. NO CONNECTION PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. ANODE 3. CATHODE−ANODE 3. GATE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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