BAV70TT1

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Preferred Device  5 '1  Features • Pb−Free Package May be Available.* The G−Suffix Denotes a Pb−Free Lead Finish http://onsemi.com    MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Peak Forward Surge Current
  3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR−4 Board (1) TA = 25°C Derated above 25°C PD Thermal Resistance, Junction to Ambient (1) RJA Total Device Dissipation, FR−4 Board (2) TA = 25°C Derated above 25°C PD Thermal Resistance, Junction−to−Ambient (2) Junction and Storage Temperature Range   Unit 1 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C RJA 345 °C/W TJ, Tstg −55 to +150 °C 2 CASE 463 SOT−416/SC−75 STYLE 3 DEVICE MARKING A4 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad ORDERING INFORMATION Device Package Shipping† BAV70TT1 SOT−416 3000 / Tape & Reel BAV70TT1G SOT−416 (Pb-Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value.  Semiconductor Components Industries, LLC, 2003 December, 2003 − Rev. 2 242 Publication Order Number: BAV70TT1/D BAV70TT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 70 − Vdc IR IR − − 5.0 100
Adc nAdc Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 1.5 pF Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF − − − − 715 855 1000 1250 Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 , IR(REC) = 1.0 mAdc) (Figure 1) trr − 6.0 ns VRF − 1.75 V OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100
Adc) Reverse Voltage Leakage Current (Note 3) (VR = 70 Vdc) (VR = 50 Vdc) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) (Figure 2) 3. For each individual diode while the second diode is unbiased. http://onsemi.com 243 mVdc BAV70TT1 7-)  5 !  %6 66  % 6 5 !   ?, ?;  > 8 ?,, >G G 3> - %  % 6 %  % 6 Figure 1. Recovery Time Equivalent Test Circuit  C 1!   5 !  %6 66  % 6 5 !  7-)  3> - > ? ?, ?; %  % 6 Figure 2. http://onsemi.com 244 %  % 6 ? - G BAV70TT1   $-$ $µ $ *$ $&    5 2!°  5 !° "  5 =1° " " "1 "4 "2 " -  * - 6 - 6  5  !° "  5 2!° "  5 !!° " " "  5 !°  5 !°   Figure 3. Forward Voltage 
 1 - - - 6 - 6 ! Figure 4. Leakage Current $ $%$; " "3 "2 ") "4  1 4 2 - - - 6 - 6 ,?$ 6E$$6$ Figure 5. Capacitance " "  5 "! " " "! " " " 6 % 6 " " " " " " " ?   Figure 6. Normalized Thermal Response http://onsemi.com 245