BAV99LT1 Dual Series Switching Diode
Features
• Pb−Free Packages are Available
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MAXIMUM RATINGS (Each Diode)
Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) Repetitive Peak Forward Current Non−Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 s Symbol VR IF IFM(surge) VRRM IF(AV) IFRM IFSM 2.0 1.0 0.5 Value 70 215 500 70 715 450 Unit Vdc mAdc mAdc V mA mA A
ANODE 1
CATHODE 2
3 CATHODE/ANODE
3 1 2
CASE 318 SOT−23 STYLE 11
MARKING DIAGRAM
A7 MG G 1 A7 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 −65 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
ORDERING INFORMATION
Device BAV99LT1 BAV99LT1G BAV99LT3 BAV99LT3G Package SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 10,000/Tape & Reel
1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
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September, 2006 − Rev. 4
Publication Order Number: BAV99LT1/D
BAV99LT1
OFF CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic Reverse Breakdown Voltage, (I(BR) = 100 mA) Reverse Voltage Leakage Current, (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc, TJ = 150°C) Diode Capacitance, (VR = 0, f = 1.0 MHz) Forward Voltage, (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time, (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) RL = 100 W Forward Recovery Voltage, (IF = 10 mA, tr = 20 ns) VFR − 1.75 V trr − 6.0 ns VF − − − − 715 855 1000 1250 mVdc CD − 1.5 pF V(BR) IR 70 − − − − 2.5 30 50 Vdc mAdc Symbol Min Max Unit
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BAV99LT1
CURVES APPLICABLE TO EACH DIODE
100 IF, FORWARD CURRENT (mA) I R, REVERSE CURRENT (μ A) 10 TA = 150°C 1.0 TA = 125°C
10 TA = 85°C 1.0 TA = 25°C TA = −40°C 0.1 0.2 0.4 0.6 0.8 1.0 1.2
0.1
TA = 85°C TA = 55°C
0.01 TA = 25°C 0 10 20 30 40 50 VR, REVERSE VOLTAGE (VOLTS)
0.001
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
Figure 2. Leakage Current
0.68 CD , DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
0
2
4
6
8
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
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BAV99LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236) CASE 318−08 ISSUE AN
D
3 SEE VIEW C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.
E
1 2
HE c b e q 0.25
A L A1 L1 VIEW C
DIM A A1 b c D E e L L1 HE
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10
MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104
STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE
SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035 0.8 0.031
SCALE 10:1 mm inches
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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BAV99LT1/D
