BAV99RWT1G

DATA SHEET www.onsemi.com Dual Series Switching Diodes SC−70 CASE 419 BAV99W, BAV99RW The BAV99WT1G is a smaller package, equivalent to the BAV99LT1G. ANODE 1 Features 3 CATHODE/ANODE • S and NSV Prefix for Automotive and Other Applications Requiring • CATHODE 2 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* BAV99WT1 SC−70, CASE 419, STYLE 9 CATHODE 1 Suggested Applications • • • • • 3 CATHODE/ANODE ESD Protection Polarity Reversal Protection Data Line Protection Inductive Load Protection Steering Logic BAV99RWT1 SC−70, CASE 419, STYLE 10 MARKING DIAGRAM X7 MG G MAXIMUM RATINGS (Each Diode) Rating Reverse Voltage Forward Current 1 Symbol Value Unit VR 100 Vdc IF 215 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage VRRM 100 V Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) IF(AV) 715 mA Repetitive Peak Forward Current IFRM 450 mA Non−Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 s IFSM Peak Forward Surge Current A 2.0 1.0 0.5 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0  0.75  0.062 in. © Semiconductor Components Industries, LLC, 2015 February, 2022 − Rev. 11 ANODE 2 1 A7 F7 M G = BAV99W = BAV99RW = Date Code = Pb−Free Package ORDERING INFORMATION Package Shipping† BAV99WT1G SC−70 (Pb−Free) 3,000 / Tape & Reel SBAV99WT1G SC−70 (Pb−Free) 3,000 / Tape & Reel BAV99RWT1G SC−70 (Pb−Free) 3,000 / Tape & Reel SBAV99RWT1G SC−70 (Pb−Free) 3,000 / Tape & Reel BAV99WT3G SC−70 10,000 / Tape & Reel (Pb−Free) NSVBAV99WT3G SC−70 10,000 / Tape & Reel (Pb−Free) Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAV99WT1/D BAV99W, BAV99RW THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 200 1.6 mW mW/°C RqJA 625 °C/W PD 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −65 to +150 °C Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient Junction and Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode) Symbol Characteristic Min Max 100 − − − − 1.0 30 50 − 1.5 − − − − 715 855 1000 1250 − 6.0 − 1.75 Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 mA) V(BR) Reverse Voltage Leakage Current (VR = 100 Vdc) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc, TJ = 150°C) IR Diode Capacitance (VR = 0, f = 1.0 MHz) CD Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 W trr Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) VFR Vdc mAdc pF mVdc ns V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. 820 W +10 V 2k 100 mH 0.1 mF IF tr tp 0.1 mF t IF trr 10% t DUT 50 W OUTPUT PULSE GENERATOR 90% 50 W INPUT SAMPLING OSCILLOSCOPE IR VR INPUT SIGNAL Notes: (a) A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: (b) Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: (c) tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) BAV99W, BAV99RW CURVES APPLICABLE TO EACH DIODE 1000 10 I R, REVERSE CURRENT (A) μ 100 10 TA = 150°C TA = 25°C 1.0 TA = -55°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.1 0.0 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 0.001 1.2 10 0 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 0.68 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance www.onsemi.com 3 8 50 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419 ISSUE R DATE 11 OCT 2022 SCALE 4:1 GENERIC MARKING DIAGRAM XX MG G 1 XX M G = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: CANCELLED STYLE 6: PIN 1. EMITTER 2. BASE 3. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 7: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE 98ASB42819B SC−70 (SOT−323) STYLE 11: PIN 1. CATHODE 2. CATHODE 3. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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