BAW56TT1

BAW56TT1 Preferred Device Dual Switching Diode Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 1.8 mW mW/°C 555 °C/W 360 2.9 mW mW/°C RθJA 345 °C/W TJ, Tstg −55 to +150 °C Peak Forward Surge Current CATHODE 1 3 ANODE 2 CATHODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR−4 Board (Note 1), TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation, FR−4 Board (Note 2), TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range PD RθJA 1 CASE 463 SC−75/SOT−416 STYLE 4 PD MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad A1 M G G 1 A1 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device BAW56TT1 Package Shipping † SC−75/SOT−416 3000/Tape & Reel BAW56TT1G SC−75/SOT−416 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 2 1 Publication Order Number: BAW56TT1/D BAW56TT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 70 − Vdc − − − 30 2.5 50 − 2.0 − − − − 715 855 1000 1250 − 6.0 OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 mAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150°C) IR Diode Capacitance (VR = 0, f = 1.0 MHz) CD Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 60 mAdc) (IF = 150 mAdc) VF Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 W, IR(REC) = 1.0 mAdc) (Figure 1) trr mAdc pF mVdc ns 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% DUT 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE VR IR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 BAW56TT1 10 IR , REVERSE CURRENT (μA) IF, FORWARD CURRENT (mA) 100 10 TA = 85°C TA = 25°C 1.0 TA = 150°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = −40°C 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 0.001 1.2 TA = 25°C 0 10 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 3. Leakage Current CD, DIODE CAPACITANCE (pF) 1.75 1.5 1.25 1.0 0.75 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 4. Capacitance 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 5. Normalized Thermal Response http://onsemi.com 3 10 100 1000 BAW56TT1 PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e −D− DIM A A1 b C D E e L HE 1 M D 0.20 (0.008) E HE C INCHES NOM 0.031 0.002 0.008 0.006 0.063 0.031 0.04 BSC 0.004 0.006 0.061 0.063 MIN 0.027 0.000 0.006 0.004 0.059 0.027 MAX 0.035 0.004 0.012 0.010 0.067 0.035 0.008 0.065 STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com http://onsemi.com 4 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. BAW56TT1/D