BAWH56WT1G

BAWH56W, NSVBAWH56W Dual Switching Diode, Common Anode Features • 175°C TJ(MAX) − Rated for High Temperature, Mission Critical www.onsemi.com Applications • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Reverse Voltage Rating VR 70 V Forward Current IF 200 mA IFSM 2.0 A Non−Repetitive Peak Surge Current (surge applied at rated load conditions, half wave, single pulse, 60 Hz) SC−70 CASE 419 STYLE 4 CATHODE 1 ANODE 3 2 CATHODE MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. CH M G G THERMAL CHARACTERISTICS (TA = 25°C) Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature 1 Symbol Max Unit PD 200 mW 1.1 mW/°C (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. RJA 615 °C/W PD 300 mW 1.6 mW/°C RJA 417 °C/W TJ, Tstg −55 to +175 °C 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 2018 June, 2019 − Rev. 4 CH M G = Device Code = Date Code* = Pb−Free Package ORDERING INFORMATION Package Shipping† BAWH56WT1G SC−70 (Pb−Free) 3,000 / Tape & Reel NSVBAWH56WT1G SC−70 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 Publication Order Number: BAWH56W/D BAWH56W, NSVBAWH56W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 70 − − − − 30 2.5 50 − 2.0 − − − − 715 855 1000 1250 − 6.0 Unit OFF CHARACTERISTICS V(BR) Reverse Breakdown Voltage (I(BR) = 100 A) Reverse Voltage Leakage Current (VR = 25 V, TJ = 175°C) (VR = 70 V) (VR = 70 V, TJ = 175°C) IR Diode Capacitance (VR = 0, f = 1.0 MHz) CD Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF Reverse Recovery Time (IF = IR = 10 mA, RL = 100 , IR(REC) = 1.0 mA) (Figure 1) trr V A pF mV ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820  +10 V 2.0 k 100 H tr 0.1 F IF tp t IF trr 10% t 0.1 F 90% DUT 50  OUTPUT PULSE GENERATOR 50  INPUT SAMPLING OSCILLOSCOPE iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 BAWH56W, NSVBAWH56W TYPICAL CHARACTERISTICS 100 200 IR , REVERSE CURRENT (μA) 175°C 20 125°C 85°C 2.0 125°C 1.0 85°C 0.1 0.01 25°C 0.001 25°C 0.2 0.2 0.4 -55°C 0.0001 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 0 1.2 60 50 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 10 Figure 2. Forward Voltage Figure 3. Leakage Current 1.6 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 175°C 10 TA = 25°C f = 1 MHz 1.4 1.2 1.0 0.8 0.6 0.4 0 2 4 6 VR, REVERSE VOLTAGE (V) Figure 4. Capacitance www.onsemi.com 3 8 10 70 80 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419 ISSUE P DATE 07 OCT 2021 SCALE 4:1 GENERIC MARKING DIAGRAM XX MG G 1 XX M G = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: CANCELLED STYLE 6: PIN 1. EMITTER 2. BASE 3. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 7: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODE-CATHODE 98ASB42819B SC−70 (SOT−323) STYLE 11: PIN 1. CATHODE 2. CATHODE 3. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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