BBL4001-1E

Ordering number : ENA1356A BBL4001 N-Channel Power MOSFET http://onsemi.com 60V, 74A, 6.1mΩ, TO-220F-3SG Features • • • ON-resistance RDS(on)1=4.7mΩ(typ.) Input capacitance Ciss=6,900pF(typ.) 4V drive Specifications TO-220F-3SG Absolute Maximum Ratings at Ta=25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol Conditions Ratings VDSS VGSS ID IDP Unit 60 PW≤10μs, duty cycle≤1% V ±20 V 74 A 296 A 2.0 W Allowable Power Dissipation PD Junction Temperature Tj Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 370 mJ 65 A Avalanche Current *2 Tc=25°C 35 W 150 °C Note : *1 VDD=30V, L=100μH, IAV=65A(Fig.1) *2 L≤100μH, Single pulse Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ 60 Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0V VDS=60V, VGS=0V Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 1.2 Forward Transconductance gFS VDS=10V, ID=37A 32 Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 ID=37A, VGS=10V ID=37A, VGS=4V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Unit max V 1 μA ±10 μA 2.6 53 V S 4.7 6.1 mΩ 7.0 9.8 mΩ 6900 pF 740 pF Crss 540 pF td(on) tr 48 ns 300 ns 510 ns Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=30V, VGS=10V, ID=74A 340 ns 135 nC 18 nC 32 IS=74A, VGS=0V 1.0 nC 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2014 April, 2014 40214 TKIM TC-00003095 / N2608QA TI IM TC-00001754 No. A1356-1/5 BBL4001 Tc= -25°C 75°C VDS=10V 10 4V 120 30 25 °C 30 C 60 --25 ° 60 90 5°C 90 Tc= 7 Drain Current, ID -- A Drain Current, ID -- A 120 ID -- VGS(th) 150 6V V 8 V Tc=25°C 25°C ID -- VDS 150 VGS=3V 0.6 0.8 1.0 1.2 Drain to Source Voltage, VDS -- V Static Drain to Source On-State Resistance, RDS(on) -- mΩ 12 10 8 Tc=75°C 6 25°C 4 --25°C 2 0 0 1 2 3 4 5 6 7 8 9 Gate to Source Voltage, VGS -- V °C C 5° 10 = Tc 7 --2 °C 75 5 3 2 3 5 7 1.0 3 2 5 7 10 2 3 Drain Current, ID -- A 5 7 100 8 6 VDD=30V VGS=10V 4.5 IT14162 4 2 --25 0 25 50 75 100 125 150 IT14164 IS -- VSD VGS=0V Single pulse 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT14166 Ciss, Coss, Crss -- VDS 5 td(off) 4.0 Diode Forward Voltage, VSD -- V f=1MHz 3 2 5 3 10000 7 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 7 3.5 37A I D= , V =4 V GS A =37 V, I D 0 1 = VGS IT14165 SW Time -- ID 1000 10 0.01 7 5 3 2 0.001 2 1.0 0.1 3.0 12 100 7 5 3 2 25 2.5 Single pulse 3 2 5 2 2.0 Case Temperature, Tc -- °C VDS=10V 3 1.5 RDS(on) -- Tc 0 --50 10 Source Current, IS -- A Forward Transconductance, gFS -- S 7 1.0 Gate to Source Voltage, VGS -- V IT14163 gFS -- ID 100 0.5 14 ID=37A Single pulse 14 0 IT14161 RDS(on) -- VGS 16 0 1.4 --25° C 0.4 5°C 25°C 0.2 Tc= 7 0 Static Drain to Source On-State Resistance, RDS(on) -- mΩ 0 tf 2 100 tr 7 3 0.1 3 2 1000 Coss 7 5 Crss 3 td(on) 5 Ciss 2 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT14167 100 0 5 10 15 20 25 Drain to Source Voltage, VDS -- V 30 IT14168 No. A1356-2/5 BBL4001 VGS -- Qg 10 8 Drain Current, ID -- A Gate to Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 50 100 PD -- Ta Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 0.5 40 60 80 100 120 140 Ambient Temperature, Ta -- °C Avalanche Energy derating factor -- % 1.0 7 5 3 2 s ms Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 PD -- Tc 30 25 20 15 10 5 0 160 5 7 100 IT14170 35 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C IT14158 EAS -- Ta 120 10 Operation in DC 0m op s this area is era tio limited by RDS(on). n 40 1.0 20 1m 10 10 7 5 3 2 μs 0μ s Drain to Source Voltage, VDS -- V 1.5 0 10 10 ID=74A 100 7 5 3 2 IT14169 2.0 0 IDP=296A (PW≤10μs) 0.1 0.1 150 Total Gate Charge, Qg -- nC 2.5 SOA 7 5 3 2 VDS=30V ID=74A 160 IT14159 100 80 60 40 20 0 0 25 50 75 100 125 150 Ambient Temperature, Ta -- °C RθJC -- Pulse Time 10 Thermal Resistance, RθJC -- ºC/W 175 IT14160 Duty Cycle=0.5 0.2 0.1 0.05 1.0 0.02 0.01 0.1 lse le Pu 0.01 Sing 0.001 0.000001 2 3 5 70.00001 2 3 5 70.0001 2 3 5 7 0.001 2 3 5 7 0.01 Pulse Time, PT -- s 2 3 5 7 0.1 2 3 5 7 1 2 3 5 7 10 IT17539 No. A1356-3/5 BBL4001 Package Dimensions BBL4001-1E TO-220 Fullpack, 3-Lead / TO-220F-3SG CASE 221AT ISSUE A unit : mm 1: Gate 2: Drain 3: Source Marking Ordering & Package Information Device Package Shipping memo BBL4001-1E TO-220F-3SG SC-67 50 pcs. / tube Pb-Free Electrical Connection 2 BL4001 LOT No. 1 3 No. A1356-4/5 BBL4001 Fig.1 Unclamped Inductive Switching Test Circuit L Fig.2 Switching Time Test Circuit 10V 0V ≥50Ω 50Ω ID=37A RL=0.81Ω VIN BBL4001 10V 0V VDD=30V VIN VDD D PW=10μs D.C.≤1% VOUT G BBL4001 P.G 50Ω S Note on usage : Since the BBL4001 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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