BC327-25ZL1G

BC327, BC327-16, BC327-25, BC327-40 Amplifier Transistors PNP Silicon http://onsemi.com Features • These are Pb−Free Devices* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −45 Vdc Collector −Emitter Voltage VCES −50 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −800 mAdc Total Power Dissipation @ TA = 25°C Derate above TA = 25°C PD 625 5.0 mW mW/°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range 2 BASE 3 EMITTER TO−92 CASE 29 STYLE 17 1 12 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM BC xxx AYWW G G BCxxx = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 September, 2011 − Rev. 6 1 Publication Order Number: BC327/D BC327, BC327−16, BC327−25, BC327−40 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max −45 − − −50 − − −5.0 − − − − −100 − − −100 − − −100 100 100 160 250 40 − − − − − 630 250 400 630 − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mA, IB = 0) V(BR)CEO Collector −Emitter Breakdown Voltage (IC = −100 mA, IE = 0) V(BR)CES Emitter −Base Breakdown Voltage (IE = −10 mA, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −30 V, IE = 0) ICBO Collector Cutoff Current (VCE = −45 V, VBE = 0) ICES Emitter Cutoff Current (VEB = −4.0 V, IC = 0) IEBO Vdc Vdc Vdc nAdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = −100 mA, VCE = −1.0 V) hFE BC327 BC327−16 BC327−25 BC327−40 (IC = −300 mA, VCE = −1.0 V) − Base−Emitter On Voltage (IC = −300 mA, VCE = −1.0 V) VBE(on) − − −1.2 Vdc Collector −Emitter Saturation Voltage (IC = −500 mA, IB = −50 mA) VCE(sat) − − −0.7 Vdc Cob − 11 − pF fT − 260 − MHz SMALL−SIGNAL CHARACTERISTICS Output Capacitance (VCB = −10 V, IE = 0, f = 1.0 MHz) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 V, f = 100 MHz) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 0.03 P(pk) SINGLE PULSE 0.01 t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.02 0.01 0.001 qJC(t) = (t) qJC qJC = 100°C/W MAX qJA(t) = r(t) qJA qJA = 375°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t, TIME (SECONDS) 1.0 2.0 Figure 1. Thermal Response http://onsemi.com 2 5.0 10 20 50 100 BC327, BC327−16, BC327−25, BC327−40 1.0 s 1.0 ms 1000 TJ = 135°C 100 ms dc TC = 25°C dc TA = 25°C -100 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) -10 -1.0 VCE = -1.0 V TA = 25°C hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) -1000 -3.0 -10 -30 VCE, COLLECTOR-EMITTER VOLTAGE 100 10 -0.1 -100 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain -1.0 -1.0 TA = 25°C TJ = 25°C -0.8 -0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Active Region − Safe Operating Area IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 0 -0.01 -0.1 -1.0 -10 IB, BASE CURRENT (mA) VBE(on) @ VCE = -1.0 V -0.6 -0.4 VCE(sat) @ IC/IB = 10 0 -1.0 -100 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 Figure 5. “On” Voltages 100 +1.0 qVC for VCE(sat) C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 4. Saturation Region 0 -1.0 -1.0 VBE(sat) @ IC/IB = 10 -0.2 IC = -100 mA IC = -10 mA -2.0 -1000 qVB for VBE -10 -100 IC, COLLECTOR CURRENT Cib 10 Cob 1.0 -0.1 -1000 Figure 6. Temperature Coefficients -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances http://onsemi.com 3 -100 BC327, BC327−16, BC327−25, BC327−40 ORDERING INFORMATION Specific Device Marking Package Type Shipping† 7 TO−92 Straight Lead (Pb−Free) 5000 Units / Bulk BC327RL1G 327 TO−92 Bent Lead (Pb−Free) 2000 / Tape & Reel BC327−025G 327 TO−92 Straight Lead (Pb−Free) 5000 Units / Bulk BC327−25RL1G 7−25 TO−92 Bent Lead (Pb−Free) 2000 / Tape & Reel BC327−25ZL1G 32725 TO−92 Bent Lead (Pb−Free) 2000 / Tape & Ammo Box BC327−40ZL1G 7−40 TO−92 Bent Lead (Pb−Free) 2000 / Tape & Ammo Box Device Order Number BC327G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM SCALE 1:1 1 12 3 STRAIGHT LEAD BULK PACK DATE 09 MAR 2007 2 3 BENT LEAD TAPE & REEL AMMO PACK A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. STRAIGHT LEAD BULK PACK R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X−X N 1 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K DIM A B C D G J K N P R V D X X J V 1 C N SECTION X−X MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- STYLES ON PAGE 2 DOCUMENT NUMBER: STATUS: 98ASB42022B ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 TO−92 (TO−226) http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 3 TO−92 (TO−226) CASE 29−11 ISSUE AM DATE 09 MAR 2007 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 6: PIN 1. GATE 2. SOURCE & SUBSTRATE 3. DRAIN STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 8: PIN 1. DRAIN 2. GATE 3. SOURCE & SUBSTRATE STYLE 9: PIN 1. BASE 1 2. EMITTER 3. BASE 2 STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 11: PIN 1. ANODE 2. CATHODE & ANODE 3. CATHODE STYLE 12: PIN 1. MAIN TERMINAL 1 2. GATE 3. MAIN TERMINAL 2 STYLE 13: PIN 1. ANODE 1 2. GATE 3. CATHODE 2 STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2 STYLE 16: PIN 1. ANODE 2. GATE 3. CATHODE STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER STYLE 18: PIN 1. ANODE 2. CATHODE 3. NOT CONNECTED STYLE 19: PIN 1. GATE 2. ANODE 3. CATHODE STYLE 20: PIN 1. NOT CONNECTED 2. CATHODE 3. ANODE STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN STYLE 23: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 24: PIN 1. EMITTER 2. COLLECTOR/ANODE 3. CATHODE STYLE 25: PIN 1. MT 1 2. GATE 3. MT 2 STYLE 26: PIN 1. VCC 2. GROUND 2 3. OUTPUT STYLE 27: PIN 1. MT 2. SUBSTRATE 3. MT STYLE 28: PIN 1. CATHODE 2. ANODE 3. GATE STYLE 29: PIN 1. NOT CONNECTED 2. ANODE 3. CATHODE STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE STYLE 31: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 32: PIN 1. BASE 2. COLLECTOR 3. EMITTER STYLE 33: PIN 1. RETURN 2. INPUT 3. OUTPUT STYLE 34: PIN 1. INPUT 2. GROUND 3. LOGIC STYLE 35: PIN 1. GATE 2. COLLECTOR 3. EMITTER DOCUMENT NUMBER: STATUS: 98ASB42022B ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 TO−92 (TO−226) http://onsemi.com 2 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 2 OFXXX 3 DOCUMENT NUMBER: 98ASB42022B PAGE 3 OF 3 ISSUE AM REVISION ADDED BENT−LEAD TAPE & REEL VERSION. REQ. BY J. SUPINA. DATE 09 MAR 2007 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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