BC327
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for AF-Driver Stages and Low-Power Output Stages
• Complement to BC337 / BC338
1
TO-92
1. Collector 2. Base 3. Emitter
Ordering Information
Part Number
Top Mark
Package
Packing Method
BC327BU
BC327
TO-92 3L
Bulk
BC32716BU
BC32716
TO-92 3L
Bulk
BC32716TA
BC32716
TO-92 3L
Ammo
BC32725BU
BC32725
TO-92 3L
Bulk
BC32725TA
BC32725
TO-92 3L
Ammo
BC32740BU
BC32740
TO-92 3L
Bulk
BC32740TA
BC32740
TO-92 3L
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
V
VCES
Collector-Emitter Voltage
-50
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
-800
mA
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 to 150
°C
© 2002 Fairchild Semiconductor Corporation
BC327 Rev. 1.1.0
www.fairchildsemi.com
BC327 — PNP Epitaxial Silicon Transistor
October 2014
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Value
Unit
Power Dissipation
625
mW
Derate Above 25°C
5.0
mW/°C
Thermal Resistance, Junction-to-Ambient
200
°C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVCEO
Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0
-45
V
BVCES
Collector-Emitter Breakdown Voltage IC = -0.1 mA, VBE = 0
-50
V
BVEBO
Emitter-Base Breakdown Voltage
IE = -10 μA, IC = 0
-5
V
Collector Cut-Off Current
VCE = -45 V, IB = 0
ICES
hFE1
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
fT
Cob
-2
VCE = -1 V, IC = -100 mA
100
VCE = -1 V, IC = -300 mA
60
-100
nA
630
IC = -500 mA, IB = -50 mA
-0.7
V
Base-Emitter On Voltage
VCE = -1 V, IC = -300 mA
-1.2
V
Current Gain Bandwidth Product
VCE = -5 V, IC = -10 mA,
f = 20 MHz
100
MHz
Output Capacitance
VCB = -10 V, IE = 0,
f = 1 MHz
12
pF
hFE Classification
Classification
16
25
40
hFE1
100 ~ 250
160 ~ 400
250 ~ 630
hFE2
60 ~
100 ~
170 ~
© 2002 Fairchild Semiconductor Corporation
BC327 Rev. 1.1.0
www.fairchildsemi.com
2
BC327 — PNP Epitaxial Silicon Transistor
Thermal Characteristics(1)
-20
IB=
mA
- 5.0 A
I B = - 4.5m
I B = 4.0mA
A
I B = - 3.5m A
I B = - 3.0m A
I B = - 2.5m
mA
IB =
- 2.0
IB =
-400
-300
IB =
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
-500
mA
- 1.5
-200
PT = 600
mW
IB = - 1.0mA
IB = - 0.5mA
-100
μA
- 80
IB=
μA
- 70
-16
IB=
μA
- 60
IB
P
T
0μA
=-5
-12
IB=
μA
- 40
IB = -
-8
30μA
μA
I B = - 20
-4
IB = - 10μA
IB = 0
IB = 0
-0
-1
-2
-3
-4
-5
-10
1000
PULSE
hFE, DC CURRENT GAIN
VCE = - 2.0V
100
- 1.0V
10
-1
-10
-100
-30
-40
-50
Figure 2. Static Characteristic
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Figure 1. Static Characteristic
1
-0.1
-20
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
-10
IC = 10 IB
PULSE
VCE(sat)
-1
-0.1
VBE(sat)
-0.01
-0.1
-1000
IC[mA], COLLECTOR CURRENT
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-1000
1000
VCE = -1V
PULSE
fT[MHz], GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
=6
00
mW
-100
-10
-1
-0.1
-0.4
-0.5
-0.6
-0.7
-0.8
100
10
-0.9
-1
VBE[V], BASE-EMITTER VOLTAGE
-10
-100
IC[mA], COLLECTOR CURRENT
Figure 5. Base-Emitter On Voltage
© 2002 Fairchild Semiconductor Corporation
BC327 Rev. 1.1.0
VCE = -5.0V
Figure 6. Gain Bandwidth Product
www.fairchildsemi.com
3
BC327 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
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AUTHORIZED USE
Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I77
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
