BC337, BC337-25, BC337-40 Amplifier Transistors
NPN Silicon
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• These are Pb−Free Devices
COLLECTOR 1
MAXIMUM RATINGS
Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 45 50 5.0 800 625 5.0 1.5 12 −55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C TO−92 CASE 29 STYLE 17
2 BASE 3 EMITTER
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W
3 STRAIGHT LEAD BULK PACK
12
1
3 BENT LEAD TAPE & REEL AMMO PACK
2
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
BC33 7−xx AYWW G G
BC337−xx = Device Code (Refer to page 4) A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
June, 2009 − Rev. 7
1
Publication Order Number: BC337/D
BC337, BC337−25, BC337−40
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector − Emitter Breakdown Voltage (IC = 100 mA, IE = 0) Emitter − Base Breakdown Voltage (IE = 10 mA, IC = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) Collector Cutoff Current (VCE = 45 V, VBE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) (IC = 300 mA, VCE = 1.0 V) Base−Emitter On Voltage (IC = 300 mA, VCE = 1.0 V) Collector − Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) SMALL−SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Current − Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) Cob fT − − 15 210 − − pF MHz BC337 BC337−25 BC337−40 hFE − 100 160 250 60 − − − − − − − − 630 400 630 − 1.2 0.7 Vdc Vdc V(BR)CEO V(BR)CES V(BR)EBO ICBO ICES IEBO 45 50 5.0 − − − − − − − − − − − − 100 100 100 Vdc Vdc Vdc nAdc nAdc nAdc Symbol Min Typ Max Unit
VBE(on) VCE(sat)
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1.0 0.7 0.5 0.3 0.2 0.1 0.05 0.07 0.02 0.05 0.03 0.02 0.01 0.001
D = 0.5 0.2 0.1 P(pk) SINGLE PULSE 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2
qJC(t) = (t) qJC qJC = 100°C/W MAX qJA(t) = r(t) qJA qJA = 375°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t)
0.002
0.005
0.01
0.02
0.05
0.1
0.2 0.5 t, TIME (SECONDS)
1.0
2.0
5.0
10
20
50
100
Figure 1. Thermal Response
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2
BC337, BC337−25, BC337−40
1000 IC, COLLECTOR CURRENT (mA) 1.0 s 1.0 ms TJ = 135°C 100 ms dc TC = 25°C 100 dc TA = 25°C 1000 VCE = 1 V TJ = 25°C
hFE, DC CURRENT GAIN 100
100
10 1.0
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 3.0 10 30 VCE, COLLECTOR-EMITTER VOLTAGE
10 0.1
1.0 10 100 IC, COLLECTOR CURRENT (MA)
1000
Figure 2. Active Region − Safe Operating Area
Figure 3. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS)
1.0 TA = 25°C 0.8 VBE(on) @ VCE = 1 V 0.6 VBE(sat) @ IC/IB = 10
0.6 IC = 10 mA 100 mA 300 mA 500 mA
0.4
0.4
0.2 0 0.01
0.2 VCE(sat) @ IC/IB = 10 0 0.1 1 IB, BASE CURRENT (mA) 10 100 1 10 100 IC, COLLECTOR CURRENT (mA) 1000
Figure 4. Saturation Region
Figure 5. “On” Voltages
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
+1 qVC for VCE(sat) C, CAPACITANCE (pF) 0
100
Cib 10
-1
-2
qVB for VBE
Cob
1
10 100 IC, COLLECTOR CURRENT (mA)
1000
1 0.1
1 10 VR, REVERSE VOLTAGE (VOLTS)
100
Figure 6. Temperature Coefficients
Figure 7. Capacitances
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BC337, BC337−25, BC337−40
ORDERING INFORMATION
Device BC337G BC337RL1G BC337−025G BC337−25RL1G BC337−25ZL1G BC337−040G BC337−40RL1G BC337−40ZL1G Marking 7 7 7−25 7−25 7−25 7−40 7−40 7−40 TO−92 (Pb−Free) Package Shipping† 5000 Units / Bulk 2000 / Tape & Reel 5000 Units / Bulk 2000 / Tape & Reel 2000 / Ammo Box 5000 Units / Bulk 2000 / Tape & Reel 2000 / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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BC337, BC337−25, BC337−40
PACKAGE DIMENSIONS
TO−92 (TO−226) CASE 29−11 ISSUE AM
A R P L
SEATING PLANE
B
STRAIGHT LEAD BULK PACK
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 ---
K
XX H V
1
D G J C N N SECTION X−X
DIM A B C D G H J K L N P R V
R
A
B
BENT LEAD TAPE & REEL AMMO PACK
P T
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER
K
G
XX V
1
D J C N SECTION X−X
DIM A B C D G J K N P R V
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BC337/D