BC368_D27Z

BC368 BC368 B C TO-92 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.5 A. Sourced from Process 37. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 20 V Collector-Base Voltage 25 V Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 2.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C VCEO Collector-Emitter Voltage VCES VEBO *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units BC368 625 5.0 83.3 mW mW/°C °C/W 200 °C/W (continued) Electrical Characteristics Symbol BC368 NPN General Purpose Amplifier TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 20 V V(BR)CES Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage IC = 100 µA, IE = 0 25 V IE = 10 µA, IC = 0 5.0 ICBO Collector-Cutoff Current IEBO Emitter-Cutoff Current VCB = 25 V, IE = 0 VCB = 25 V, IE = 0, TA = 150°C VEB = 5.0 V, IC = 0 V 10 1.0 10 µA mA µA ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage IC = 5.0 mA, VCE = 10 V IC = 0.5 A, VCE = 1.0 V IC = 1.0 A, VCE = 1.0 V IC = 1.0 A, IB = 100 mA VBE(on) Base-Emitter On Voltage IC = 1.0 A, VCE = 1.0 V 50 85 60 375 0.5 V 1.0 V SMALL SIGNAL CHARACTERISTICS Current Gain - Bandwidth Product fT IC = 10 mA, VCE = 5.0 V, f = 35 MHz 45 MHz 3 Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V 400 125 °C 300 25 °C 200 - 40 °C 100 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 VCESAT - COLLE CTOR-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 1 β = 10 25 °C 0.1 125 °C 0.01 0.01 - 40 °C 0.1 I C - COLLE CTOR CURRENT (A) 1 (continued) Base-Emitter Saturation Voltage vs Collector Current β = 10 1.4 1.2 1 - 40 °C 0.8 25 °C 0.6 125 °C 0.4 0.2 0.01 IC 0.1 - COLLE CTOR CURRENT ( A) 1 h FE - GAIN BANDWIDTH PRODUCT (MHz) = 20V CB 10 1 0.1 25 50 75 100 125 T A - AMBIENT TEMPERATURE (°C) 1 150 - 40 °C 0.8 0.6 25 °C 0.4 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 40 30 20 10 0 0 4 8 12 16 20 24 28 VCB - COLLECTOR-BASE VOLTAGE (V) Gain Bandwidth Product vs Collector Current Power Dissipation vs Ambient Temperature 500 700 V CE = 10V 400 300 200 100 0 V CE = 5V 125 °C Collector-Base Capacitance vs Collector-Base Voltage COLLECTOR-BASE CAPACITANCE (pF) 100 V Base-Emitter ON Voltage vs Collector Current P D - POWER DISSIPATION (mW) I CBO - COLLECTOR CURRENT (nA) Collector-Cutoff Current vs Ambient Temperature V BE(O N)- BASE-E MITTER ON VOLTAGE (V) (continued) OBO - V BESAT - BASE-EMITTER VOLTAG E (V) Typical Characteristics 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 600 500 TO-92 400 300 200 100 0 0 25 50 75 100 TEMPER ATURE ( oC) 125 150 BC368 NPN General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G