BC369ZL1G

BC368 (NPN), BC369 (PNP) Amplifier Transistors Voltage and Current are Negative for PNP Transistors Features http://onsemi.com • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Emitter Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD Value 20 25 5.0 1.0 625 5.0 PD 1.5 12 TJ, Tstg −55 to +150 Unit Vdc Vdc Vdc Adc mW mW/°C W mW/°C °C 1 2 TO−92 CASE 29 STYLE 14 3 MARKING DIAGRAMS BC36 x AYWW G G BC 36x AYWW G G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W BC36x = Device Code x = 8 or 9 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. COLLECTOR 2 3 BASE NPN 1 EMITTER 3 BASE PNP 1 EMITTER COLLECTOR 2 ORDERING INFORMATION Device BC368 BC368G BC368ZL1 BC368ZL1G BC369 BC369G BC369ZL1 Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping 5000 Units/Box 5000 Units/Box 2000/Ammo Box 2000/Ammo Box 5000 Units/Box 5000 Units/Box 2000/Ammo Box 2000/Ammo Box *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 BC369ZL1G 1 September, 2005 − Rev. 5 Publication Order Number: BC368/D BC368 (NPN), BC369 (PNP) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector −Base Breakdown Voltage (IC = 100 mA, IE = 0 ) Emitter −Base Breakdown Voltage (IE = 100 mA, IC = 0) Collector Cutoff Current (VCB = 25 V, IE = 0) (VCB = 25 V, IE = 0, TJ = 150°C) Emitter Cutoff Current (VEB = 5.0 V, IC = 0) ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) (VCE = 1.0 V, IC = 0.5 A) (VCE = 1.0 V, IC = 1.0 A) Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz) Collector−Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) Base−Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V) fT VCE(sat) VBE(on) hFE BC368, 369 BC368−25 50 85 170 60 65 − − − − − − − − − − 375 375 − − 0.5 1.0 MHz V V − V(BR)CEO V(BR)CBO V(BR)EBO ICBO − − IEBO − − − − 10 1.0 10 20 25 5.0 − − − − − − Vdc Vdc Vdc Symbol Min Typ Max Unit mAdc mAdc mAdc http://onsemi.com 2 BC368 (NPN), BC369 (PNP) 200 VCE , COLLECTOR VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 0.6 0.4 0.2 hFE, CURRENT GAIN 100 70 50 VCE = 1.0 V TJ = 25°C 50 mA 100 mA 1000 mA 500 mA 250 mA 20 50 100 20 10 20 200 50 100 IC, COLLECTOR CURRENT (mA) 500 1000 IC = 10 mA 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) Figure 1. DC Current Gain Figure 2. Collector Saturation Region TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 θ VB , TEMPERATURE COEFFICIENT (mV/ °C) 1.0 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 1.0 2.0 qVB for VBE VBE(on) @ VCE = 1.0 V 0.6 0.4 0.2 0 1.0 2.0 VCE(sat) @ IC/IB = 10 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) Figure 3. “On” Voltages BANDWIDTH PRODUCT (MHz) Figure 4. Temperature Coefficient 300 200 C, CAPACITANCE (pF) 160 TJ = 25°C 120 100 70 50 VCE = 10 V TJ = 25°C f = 20 MHz 10 20 50 100 200 500 1000 80 Cibo 40 Cobo 0 Cobo Cibo 5.0 1.0 10 2.0 15 3.0 20 4.0 25 5.0 f T, CURRENT−GAIN 30 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Current−Gain — Bandwidth Product Figure 6. Capacitance http://onsemi.com 3 BC368 (NPN), BC369 (PNP) PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− K XX G H V 1 D J C SECTION X−X N N DIM A B C D G H J K L N P R V STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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