BC372G

BC372G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO92-3

  • 描述:

    TRANS NPN DARL 100V 1A TO-92

  • 详情介绍
  • 数据手册
  • 价格&库存
BC372G 数据手册
ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. BC372, BC373 High Voltage Darlington Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO BC372 BC373 Collector −Base Voltage VCES BC372 BC373 Emitter−Base Voltage Vdc 100 80 VEBO 12 Vdc Collector Current − Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25°C Derate above TA = 25°C PD 625 5.0 mW mW/°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range EMITTER 1 Vdc 100 80 TO−92 CASE 29 STYLE 1 1 12 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W BC 37x AYWW G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. x = 2 or 3 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BC372G BC373RL1 BC373RL1G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 4 1 Package Shipping† TO−92 (Pb−Free) 5000 Units / Bulk TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BC372/D BC372, BC373 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 100 80 − − − − 100 80 − − − − 12 − − − − − − 100 100 − − 100 8.0 10 − − − 160 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0) V(BR)CES BC372 BC373 Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Vdc V(BR)CBO BC372 BC373 Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Vdc ICBO BC372 BC373 Emitter Cutoff Current (VEB = 10 V, IC = 0) IEBO Vdc nAdc nAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 250 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) hFE K Collector −Emitter Saturation Voltage (IC = 250 mAdc, IB = 0.25 mAdc) VCE(sat) − 1.0 1.1 Vdc Base −Emitter Saturation Voltage (IC = 250 mAdc, IB = 0.25 mAdc) VBE(sat) − 1.4 2.0 Vdc fT 100 200 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 10 25 pF Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 kW, f = 1.0 kHz) NF − 2.0 − dB DYNAMIC CHARACTERISTICS Current−Gain Bandwidth Product (IC = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 BC372, BC373 100 K 1.6 VCE = 5 V 1.2 25°C VOLTAGE (V) hFE, DC CURRENT GAIN TA = 125°C −55°C 10 K VBE(sat) @ IC/IB = 100 1.4 VBE(on) @ VCE = 5 V 1 0.8 VCE(sat) @ IC/IB = 100 0.6 0.4 0.2 1K 1 10 100 IC, COLLECTOR CURRENT (mA) 0 1000 5 1000 500 100 VCE = 5 V TJ = 25°C 100 10 0.6 1 100 IC, COLLECTOR CURRENT (mA) Figure 2. “Saturation” and “On” Voltages C, CAPACITANCE (pF) f, T CURRENT−GAIN  BANDWIDTH PRODUCT (MHz) Figure 1. DC Current Gain 10 10 100 IC, COLLECTOR CURRENT (mA) Cib 10 1 0.1 600 Figure 3. Current−Gain — Bandwidth Product Cob 10 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitances http://onsemi.com 3 100 BC372, BC373 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X−X DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BC372/D
BC372G
1. 物料型号:BC372和BC373。 2. 器件简介:这些是NPN硅高压达林顿晶体管,具有高电压和大电流增益特性。 3. 引脚分配:晶体管的引脚从左到右依次为发射极(1)、基极(2)和集电极(3)。 4. 参数特性: - 集电极-发射极电压(VCEO):BC372为100V,BC373为80V。 - 集电极-基极电压(VCES):BC372为100V,BC373为80V。 - 发射极-基极电压(VEBO):12V。 - 集电极电流(Ic):连续最大值为1.0A。 - 总功耗(P0):在25°C时,BC372为625mW,BC373为5.0mW。 - 工作结温范围(TJ.Tstg):-55°C至+150°C。 5. 功能详解:文档提供了详细的电气特性,包括关断特性、导通特性和动态特性。 6. 应用信息:虽然文档没有直接提供应用案例,但达林顿晶体管通常用于高电压和大电流放大应用。 7. 封装信息:提供了TO-92封装的尺寸和标记图,以及订购信息。
BC372G 价格&库存

很抱歉,暂时无法提供与“BC372G”相匹配的价格&库存,您可以联系我们找货

免费人工找货