BC372_07

BC372, BC373 High Voltage Darlington Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 BASE 2 Symbol VCEO BC372 BC373 Collector −Base Voltage BC372 BC373 Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCES 100 80 12 1.0 625 5.0 1.5 12 −55 to +150 Vdc Adc mW mW/°C W mW/°C °C 3 STRAIGHT LEAD BULK PACK 12 100 80 Vdc TO−92 CASE 29 STYLE 1 1 Value Unit Vdc EMITTER 1 • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage 3 BENT LEAD TAPE & REEL AMMO PACK 2 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W BC 37x AYWW G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. x = 2 or 3 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BC372G BC373RL1 BC373RL1G Package TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping† 5000 Units / Bulk 2000 / Tape & Reel 2000 / Tape & Reel *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BC372/D 1 March, 2007 − Rev. 4 BC372, BC373 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 V, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 250 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector −Emitter Saturation Voltage (IC = 250 mAdc, IB = 0.25 mAdc) Base −Emitter Saturation Voltage (IC = 250 mAdc, IB = 0.25 mAdc) DYNAMIC CHARACTERISTICS Current−Gain Bandwidth Product (IC = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 kW, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. fT Cob NF 100 − − 200 10 2.0 − 25 − MHz pF dB hFE 8.0 10 VCE(sat) VBE(sat) − − − − 1.0 1.4 − 160 1.1 2.0 Vdc Vdc K BC372 BC373 IEBO V(BR)CES BC372 BC373 V(BR)CBO BC372 BC373 V(BR)EBO ICBO − − − − − − 100 100 100 nAdc 100 80 12 − − − − − − Vdc nAdc 100 80 − − − − Vdc Vdc Symbol Min Typ Max Unit http://onsemi.com 2 BC372, BC373 100 K VCE = 5 V TA = 125°C hFE, DC CURRENT GAIN 25°C 10 K −55°C 1.6 1.4 1.2 VOLTAGE (V) 1 0.8 0.6 0.4 0.2 1K 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 0 5 10 100 IC, COLLECTOR CURRENT (mA) 500 VCE(sat) @ IC/IB = 100 VBE(sat) @ IC/IB = 100 VBE(on) @ VCE = 5 V Figure 1. DC Current Gain Figure 2. “Saturation” and “On” Voltages BANDWIDTH PRODUCT (MHz) 1000 VCE = 5 V TJ = 25°C C, CAPACITANCE (pF) 100 Cib 10 Cob 100 f T, CURRENT−GAIN 10 0.6 1 10 100 IC, COLLECTOR CURRENT (mA) 600 1 0.1 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 3. Current−Gain — Bandwidth Product Figure 4. Capacitances http://onsemi.com 3 BC372, BC373 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A R P L SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− B STRAIGHT LEAD BULK PACK K XX G H V 1 D J C SECTION X−X N N R A B BENT LEAD TAPE & REEL AMMO PACK P T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR K XX G D J V C SECTION X−X N 1 DIM A B C D G J K N P R V ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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