BC487BRL1

BC487, BC487B High Current Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 60 60 5.0 0.5 625 5.0 1.5 12 −55 to +150 Unit Vdc Vdc Vdc Adc mW mW/°C W mW/°C °C 1 2 3 TO−92 CASE 29 STYLE 17 BC48 7B AYWW G G 3 EMITTER 2 BASE MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W BC487B A Y WW G = = = = = Device Code Assembly Location Year Work Week Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device BC487 BC487G BC487B BC487BG BC487BRL1 Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 Shipping† 5000 Units / Box 5000 Units / Box 5000 Units / Box 5000 Units / Box 2000/Tape & Reel *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 September, 2005 − Rev. 1 Publication Order Number: BC487/D BC487, BC487B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) ON CHARACTERISTICS* DC Current Gain (IC = 10 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc)* Collector −Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) Base −Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc)(1) DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. TURN−ON TIME 5.0 ms +10 V 0 tr = 3.0 ns −1.0 V 100 Vin 5.0 mF RB 100 VCC +40 V RL OUTPUT Vin 5.0 mF 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities TURN−OFF TIME +VBB 100 RB 100 VCC +40 V RL OUTPUT fT Cob Cib − − − 200 7.0 50 − − − MHz pF pF VCE(sat) − − VBE(sat) − − 0.85 0.9 1.2 − 0.2 0.3 0.5 − Vdc hFE BC487 BC487B 40 60 160 15 − − 260 − − 400 400 − Vdc − V(BR)CEO V(BR)CBO V(BR)EBO ICBO 60 60 5.0 − − − − − − − − 100 Vdc Vdc Vdc nAdc Symbol Min Typ Max Unit *CS < 6.0 pF *CS < 6.0 pF Figure 1. Switching Time Test Circuits http://onsemi.com 2 BC487, BC487B BANDWIDTH PRODUCT (MHz) 300 200 VCE = 2.0 V TJ = 25°C C, CAPACITANCE (pF) 80 60 40 Cibo TJ = 25°C 100 70 50 20 f T, CURRENT−GAIN 10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 4.0 0.1 Figure 2. Current−Gain − Bandwidth Product Figure 3. Capacitance 1.0 k 700 500 300 200 t, TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 10 ts tf tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 10 5.0 7.0 Figure 4. Switching Time r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.02 0.01 SINGLE PULSE SINGLE PULSE ZqJC(t) = r(t) • RqJC ZqJA(t) = r(t) • RqJA 20 50 100 200 500 t, TIME (ms) 1.0 k 2.0 k P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN−469) TJ(pk) − TC = P(pk) ZqJC(t) TJ(pk) − TA = P(pk) ZqJA(t) 0.1 0.07 0.05 0.03 0.02 0.01 1.0 2.0 5.0 10 5.0 k 10 k 20 k 50 k 100 k Figure 5. Thermal Response http://onsemi.com 3 BC487, BC487B 1.0 k 700 500 300 200 100 70 50 30 20 10 1.0 TA = 25°C 1.0 s TC = 25°C 100 ms 1.0 ms IC, COLLECTOR CURRENT (mA) CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT BC489 20 30 50 2.0 3.0 5.0 7.0 10 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 70 100 Figure 6. Active Region − Safe Operating Area 400 TJ =125°C hFE , DC CURRENT GAIN 200 25°C −55°C 100 80 60 40 VCE = 1.0 V 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 Figure 7. DC Current Gain 1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 10 mA 50 mA 100 mA 250 mA 500 mA 0.6 0.4 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500 0.2 0 0.05 0.1 0.2 0.5 2.0 5.0 1.0 10 IC, COLLECTOR CURRENT (mA) 20 50 Figure 8. “On” Voltages Figure 9. Collector Saturation Region http://onsemi.com 4 BC487, BC487B RθVB, TEMPERATURE COEFFICIENT (mV/°C) −0.8 −1.2 V, VOLTAGE (VOLTS) −1.0 TJ = 25°C −0.8 VBE(sat) @ IC/IB = 10 −0.6 VBE(on) @ VCE = −1.0 V −1.6 RqVB for VBE −2.0 −0.4 −2.4 −0.2 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) 200 500 0 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −500 −2.8 0.5 Figure 10. Base−Emitter Temperature Coefficient Figure 11. “On” Voltages VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) TJ = 25°C −0.8 −0.6 RθVB, TEMPERATURE COEFFICIENT (mV/°C) −1.0 −0.8 −1.2 −1.6 RqVB for VBE −0.4 IC = −10 mA −2.0 −50 mA −100 mA −250 mA −500 mA −0.2 0 −0.05 −0.1 −0.2 −2.4 −0.5 −1.0 −2.0 −5.0 IB, BASE CURRENT (mA) −10 −20 −50 −2.8 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −500 Figure 12. Collector Saturation Region Figure 13. Base−Emitter Temperature Coefficient http://onsemi.com 5 BC487, BC487B PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− K XX G H V 1 D J C SECTION X−X N N DIM A B C D G H J K L N P R V STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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