BC488B High Current Transistors
PNP Silicon
Features
• Pb−Free Package is Available*
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COLLECTOR 1
MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter-Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg −55 to +150 W mW/°C °C 1 2 3 mW mW/°C TO−92 CASE 29 STYLE 17 Value −60 −60 −4.0 −1.0 Unit Vdc Vdc Vdc Adc 2 BASE 3 EMITTER
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W
BC 488B AYWW G G
BC488B = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device BC488BRL1 BC488BRL1G Package TO−92 TO−92 (Pb−Free) Shipping † 2000/Tape & Reel 2000/Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
1
September, 2005 − Rev. 1
Publication Order Number: BC488B/D
BC488B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1) (IC = −10 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = −100 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = −10 mAdc, IC = 0) Collector Cutoff Current (VCB = −40 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO −60 −60 −4.0 − − − − − − − − −100 Vdc Vdc Vdc nAdc
ON CHARACTERISTICS*
DC Current Gain (IC = −10 mAdc, VCE = −2.0 Vdc) (IC = −100 mAdc, VCE = −2.0 Vdc) (IC = −1.0 Adc, VCE = −5.0 Vdc) Collector −Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc) (IC = −1.0 Adc, IB = −100 mAdc) Base −Emitter Saturation Voltage (IC = −500 mAdc, IB = −50 mAdc) (IC = −1.0 Adc, IB = −100 mAdc) hFE 40 160 15 VCE(sat) − − VBE(sat) − − −0.9 −1.0 −1.2 − −0.25 −0.5 −0.5 − Vdc − 260 − − 400 − Vdc −
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = −50 mAdc, VCE = −2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. fT Cob Cib − − − 150 9.0 110 − − − MHz pF pF
TURN−ON TIME 5.0 ms +10 V 0 tr = 3.0 ns −1.0 V 100 Vin 5.0 mF RB 100 VCC +40 V RL OUTPUT Vin
TURN−OFF TIME +VBB 100 RB 5.0 mF 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities 100 VCC +40 V RL OUTPUT
*CS < 6.0 pF
*CS < 6.0 pF
Figure 1. Switching Time Test Circuits
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BC488B
BANDWIDTH PRODUCT (MHz) 200 VCE = −2.0 V TJ = 25°C 100 70 50 C, CAPACITANCE (pF) 100 70 50 30 20 Cibo TJ = 25°C
f T, CURRENT−GAIN
10 30 7.0 20 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 IC, COLLECTOR CURRENT (mA) −200 5.0 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 VR, REVERSE VOLTAGE (VOLTS)
Cobo
−50 −100
Figure 2. Current−Gain − Bandwidth Product
Figure 3. Capacitance
1.0 k 700 500 300 200 t, TIME (ns) 100 70 50 30 20 ts
td @ VBE(off) = −0.5 V VCC = −40 V IC/IB = 10 IB1 = IB2 TJ = 25°C
tf
tr −500
10 −5.0 −7.0 −10 −20 −30 −50 −70 −100 −200 −300 IC, COLLECTOR CURRENT (mA)
Figure 4. Switching Time
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 1.0
D = 0.5 0.2 0.1 0.02 0.01 SINGLE PULSE SINGLE PULSE ZqJC(t) = r(t) • RqJC ZqJA(t) = r(t) • RqJA 20 50 100 200 t, TIME (ms) 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 P(pk) t1 t2
DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN−469) TJ(pk) − TC = P(pk) ZqJC(t) TJ(pk) − TA = P(pk) ZqJA(t)
2.0
5.0
10
Figure 5. Thermal Response
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3
BC488B
−1.0 k −700 IC, COLLECTOR CURRENT (mA) −500 −200 TA = 25°C TC = 25°C −100 −70 −50 −30 −20 −10 −1.0 V, VOLTAGE (VOLTS) −300 1.0 s 1.0 ms 100 ms 1.0 TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V
0.4
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT BC490 −2.0 −3.0 −5.0 −7.0 −10 −20 −30 −50 −70 −100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500
Figure 6. Active Region, Safe Operating Area
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. “On” Voltages
TJ = 25°C 0.8 IC = 10 mA 50 mA 100 mA 250 mA 500 mA
0.6
0.4
RθVB, TEMPERATURE COEFFICIENT (mV/ C) °
1.0
−0.8 −1.2
−1.6
−2.0 RqVB for VBE
0.2 0 0.05
−2.4 −2.8 0.5
0.1
0.2
1.0 10 0.5 2.0 5.0 IC, COLLECTOR CURRENT (mA)
20
50
1.0
2.0
10 100 5.0 20 50 IC, COLLECTOR CURRENT (mA)
200
500
Figure 8. Collector Saturation Region
Figure 9. Base−Emitter Temperature Coefficient
400 TJ = 125°C hFE , DC CURRENT GAIN 200 25°C −55°C 100 80 60 40 −0.5 VCE = −1.0 V
−0.7
−1.0
−2.0
−3.0
−5.0
−7.0 −10 −20 −30 IC, COLLECTOR CURRENT (mA)
−50
−70
−100
−200
−300
−500
Figure 10. DC Current Gain
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BC488B
−1.0 TJ = 25°C −0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 −0.6 −0.4 VBE(on) @ VCE = −1.0 V VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) −1.0 TJ = 25°C −0.8
−0.6
IC = −10 mA
−50 mA
−100 mA
−250 mA −500 mA
−0.4
−0.2 VCE(sat) @ IC/IB = 10 0 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −500
−0.2 0 −0.05 −0.1
−0.2
−0.5 −1.0 −2.0 −5.0 IB, BASE CURRENT (mA)
−10
−20
−50
Figure 11. “On” Voltages
Figure 12. Collector Saturation Region
RθVB, TEMPERATURE COEFFICIENT (mV/ C) °
−0.8 −1.2
−1.6 RqVB for VBE
−2.0
−2.4 −2.8 −0.5
−1.0
−2.0
−5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA)
−500
Figure 13. Base−Emitter Temperature Coefficient
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BC488B
PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL
A R P L
SEATING PLANE
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−−
K
XX G H V
1
D J C SECTION X−X N N
DIM A B C D G H J K L N P R V
STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER
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PUBLICATION ORDERING INFORMATION
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BC488B/D
