BC517 Darlington Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range Symbol VCES VCB VEB IC PD PD TJ, Tstg Value 30 40 10 1.0 625 12 1.5 12 −55 to +150 Unit Vdc Vdc Vdc Adc mW mW/°C W mW/°C °C TO−92 CASE 29 STYLE 17
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COLLECTOR 1 BASE 2
EMITTER 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W
3 STRAIGHT LEAD BULK PACK
12
1
3 BENT LEAD TAPE & REEL AMMO PACK
2
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
BC 517 AYWW G G
A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device BC517G BC517RL1G BC517ZL1G Package TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) Shipping† 5000 Units / Bulk 2000 / Tape & Reel 2000 / Ammo Pack
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BC517/D
1
March, 2007 − Rev. 4
BC517
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 2.0 mAdc, IBE = 0) Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VCB = 10 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 20 mAdc, VCE = 2.0 Vdc) Collector −Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Collector −Emitter Saturation Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. 2. fT = |hfe| • ftest fT − 200 − MHz hFE 30,000 VCE(sat) − VBE(on) − − 1.4 − 1.0 Vdc − − Vdc − V(BR)CES 30 V(BR)CBO 40 V(BR)EBO 10 ICES − ICBO − IEBO − − 100 − 100 nAdc − 500 nAdc − − nAdc − − Vdc − − Vdc Vdc Symbol Min Typ Max Unit
RS
in en
IDEAL TRANSISTOR
Figure 1. Transistor Noise Model
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BC517
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500 200 100
BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA)
2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 100 mA 10 mA
en, NOISE VOLTAGE (nV)
IC = 1.0 mA
10 mA 50 100 mA 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k
50 100 200
500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz)
50 k 100 k
Figure 2. Noise Voltage
Figure 3. Noise Current
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
200 BANDWIDTH = 10 Hz TO 15.7 kHz NF, NOISE FIGURE (dB) IC = 10 mA
14 BANDWIDTH = 10 Hz TO 15.7 kHz 12
100 70 50 30 20
10 8.0 6.0 4.0 2.0 IC = 1.0 mA 100 mA
10 mA
100 mA
1.0 mA 10
1.0
2.0
5.0
10 20 50 100 200 RS, SOURCE RESISTANCE (kW)
500
1000
0 1.0
2.0
5.0
10 20 50 100 200 RS, SOURCE RESISTANCE (kW)
500 1000
Figure 4. Total Wideband Noise Voltage
Figure 5. Wideband Noise Figure
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BC517
SMALL−SIGNAL CHARACTERISTICS
20 TJ = 25°C |h fe |, SMALL−SIGNAL CURRENT GAIN
4.0 VCE = 5.0 V f = 100 MHz TJ = 25°C
C, CAPACITANCE (pF)
10 7.0 5.0
2.0
Cibo Cobo
1.0 0.8 0.6 0.4
3.0
2.0 0.04
0.1
0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS)
10
20
40
0.2 0.5
1.0
2.0
0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA)
500
Figure 6. Capacitance
Figure 7. High Frequency Current Gain
200 k 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
TJ = 125°C
3.0 TJ = 25°C 2.5 IC = 10 mA 50 mA 250 mA 500 mA
hFE, DC CURRENT GAIN
25°C
2.0
1.5
−55 °C VCE = 5.0 V
1.0 0.5 0.1 0.2
2.0 k 5.0 7.0
10
20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)
500
0.5 1.0 2.0 5.0 10 20 50 IB, BASE CURRENT (mA)
100 200
500 1000
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
RθV, TEMPERATURE COEFFICIENTS (mV/°C)
1.6 TJ = 25°C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0
−1.0 −2.0 −3.0
*APPLIES FOR IC/IB ≤ hFE/3.0 *RqVC FOR VCE(sat)
25°C TO 125°C
−55 °C TO 25°C
25°C TO 125°C −4.0 qVB FOR VBE −5.0 −6.0 5.0 7.0 10 −55 °C TO 25°C
0.8 0.6
VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)
500
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
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BC517
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE
D = 0.5 0.2
() RESISTANCE (NORMALIZED)
SINGLE PULSE ZqJC(t) = r(t) • RqJC TJ(pk) − TC = P(pk) ZqJC(t) ZqJA(t) = r(t) • RqJA TJ(pk) − TA = P(pk) ZqJA(t)
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
Figure 12. Thermal Response
IC, COLLECTOR CURRENT (mA)
1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25°C TC = 25°C
1.0 ms 100 ms 1.0 s
FIGURE A tP PP PP
t1 1/f 40 t DUTY CYCLE + t1 f + 1 tP PEAK PULSE POWER = PP
1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
Design Note: Use of Transient Thermal Resistance Data
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BC517
PACKAGE DIMENSIONS
TO−92 (TO−226) CASE 29−11 ISSUE AM
A R P L
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−−
B
STRAIGHT LEAD BULK PACK
K
XX G H V
1
D J C SECTION X−X N N
R
A
B
BENT LEAD TAPE & REEL AMMO PACK
P T
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER
K
XX G
D J V C SECTION X−X N
1
DIM A B C D G J K N P R V
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BC517/D