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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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BC556 / BC557 / BC558 / BC559 / BC560
PNP Epitaxial Silicon Transistor
Features
•
•
•
•
Switching and Amplifier
High-Voltage: BC556, VCEO = -65 V
Low-Noise: BC559, BC560
Complement to BC546, BC547, BC548, BC549, and BC550
TO-92
12
3
Straight Lead
Bulk Packing
1
2
1. Collector
2. Base
3. Emitter
3
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
Marking
Package
Packing Method
BC556ABU
BC556A
TO-92 3L
Bulk
BC556ATA
BC556A
TO-92 3L
Ammo
BC556BTA
BC556B
TO-92 3L
Ammo
BC556BTF
BC556B
TO-92 3L
Tape and Reel
BC556BTFR
BC556B
TO-92 3L
Tape and Reel
BC557ATA
BC557A
TO-92 3L
Ammo
BC557BTA
BC557B
TO-92 3L
Ammo
BC557BTF
BC557B
TO-92 3L
Tape and Reel
BC558BTA
BC558B
TO-92 3L
Ammo
BC559BTA
BC559B
TO-92 3L
Ammo
BC559CTA
BC559C
TO-92 3L
Ammo
BC560CTA
BC560C
TO-92 3L
Ammo
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
1
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
January 2016
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Value
BC556
-80
BC557 / BC560
-50
BC558 / BC559
-30
BC556
-65
BC557 / BC560
-45
BC558 / BC559
-30
Unit
V
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
-100
mA
ICP
Peak Collector Current (Pulse)
-200
mA
IBP
Peak Base Current (Pulse)
-200
mA
TJ
Junction Temperature
150
°C
-65 to +150
°C
Max.
Unit
TSTG
Storage Temperature Range
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Total Power Dissipation
500
mW
Derate Above 25°C
4.0
mW/°C
Thermal Resistance, Junction-to-Ambient
250
°C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
2
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
-15
nA
ICBO
Collector Cut-Off Current
VCB = -30 V, IE = 0
hFE
DC Current Gain
VCE = -5 V, IC = -2 mA
VCE(sat)
Collector-Emitter Saturation
Voltage
IC = -10 mA, IB = -0.5 mA
-90
-300
IC = -100 mA, IB = -5 mA
-250
-650
VBE(sat)
Collector-Base Saturation Voltage
IC = -10 mA, IB = -0.5 mA
-700
IC = -100 mA, IB = -5 mA
-900
VBE(on)
Base-Emitter On Voltage
fT
Cob
NF
110
VCE = -5 V, IC = -2 mA
-600
-660
VCE = -5 V, IC = -10 mA
VCE = -5 V, IC = -10 mA,
f = 10 MHz
Output Capacitance
VCB = -10 V, IE = 0, f = 1 MHz
BC556 / BC557 / BC558 VCE = -5 V, IC = -200 μA,
f = 1 kHz, RG = 2 kΩ
BC559 / BC560
VCE = -5 V, IC = -200 μA,
RG = 2 kΩ, f = 30 to 15000 MHz
BC559
BC560
-750
150
mV
MHz
6
2
mV
mV
-800
Current Gain Bandwidth Product
Noise
Figure
800
pF
10
1
4
1.2
4.0
1.2
2.0
dB
hFE Classification
Classification
A
B
C
hFE
110 ~ 220
200 ~ 450
420 ~ 800
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
3
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Electrical Characteristics
1000
-50
IB = -400μA
IB = -350μA
-40
IB = -300μA
-35
IB = -250μA
-30
IB = -200μA
-25
-20
IB = -150μA
-15
IB = -100μA
-10
o
TA = 25 C
o
TA = -55 C
100
IB = -50μA
-5
10
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-1
Figure 1. Static Characteristic
-100
-1000
Figure 2. DC Current Gain
-1000
-10
IC = 20 IB
IC [mA], COLLECTOR CURRENT
IC = 20 IB
SATURATION VOLTAGE
-10
IC [mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE(sat) [V], COLLECTOR-EMITTER
VCE = -5V
o
TA = 150 C
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-45
-1
o
TA = 25 C
o
TA = 150 C
-0.1
o
TA = -55 C
-10
-100
-10
o
TA = 150 C
-1
-0.0
-0.01
-1
-100
-1000
-0.2
o
o
TA = 25 C
-0.4
-0.6
TA = -55 C
-0.8
-1.0
-1.2
VBE(sat) [V], BASE-EMITTER SATURATION VOLTAGE
IC [mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
VCE = -5V
Cob(pF), CAPACITANCE
IC [mA], COLLECTOR CURRENT
-1000
-100
-10
o
TA = 150 C
o
TA = 25 C
f=1MHz
IE = 0
10
o
TA = -55 C
1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1
-1.2
VBE(on) [V], BASE-EMITTER ON VOLTAGE
-100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
-10
Figure 6. Collector Output Capacitance
www.fairchildsemi.com
4
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
1000
VCE = -5V
POWER DISSIPATION, PD [mW]
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
100
10
1
10
-1
-10
0
50
100
150
o
AMBIENT TEMPERATURE, [ C]
IC[mA], COLLECTOR CURRENT
Figure 7. Current Gain Bandwidth Product
r(t), Normalized Transient Thermal Resistance
100
Figure 8. Power Deration
1000
100
50%
30%
10%
10
Rthja(t)=r(t)*Rthja
o
Rthja=250 C/W
5%
2%
D=1%
1
0.1
0.01
1E-5
Single Pulse
1E-4
1E-3
0.01
0.1
1
10
100
1000
t1, time(sec)
Figure 9. Normalized Transient Thermal Resistance
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
5
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics (Continued)
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Physical Dimensions
Figure 10. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION, BULK
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
6
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Physical Dimensions (Continued)
Figure 11. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM, AMMO, TAPE AND REEL
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
7
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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