BC560C Low Noise Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Collector − Emitter Voltage Collector − Base Voltage Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value −45 −50 −5.0 −100 625 5.0 1.5 12 − 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C TO−92 CASE 29 STYLE 17
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COLLECTOR 1 2 BASE 3 EMITTER
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W
3 STRAIGHT LEAD BULK PACK
12
1
3 BENT LEAD TAPE & REEL AMMO PACK
2
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
BC56 0C AYWW G G
A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device BC560CG *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2009
Package TO−92 (Pb−Free) TO−92 (Pb−Free)
Shipping 5000 Units / Bulk 2000 / Ammo Pack
BC560CZL1G
June, 2009 − Rev. 3
1
Publication Order Number: BC560C/D
BC560C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = −10 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = −10 mAdc, IC = 0) Collector Cutoff Current (VCB = −30 Vdc, IE = 0) (VCB = −30 Vdc, IE = 0, TA = +125°C) Emitter Cutoff Current (VEB = −4.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −2.0 mAdc, VCE = −5.0 Vdc) Collector − Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.5 mAdc) (IC = −10 mAdc, IB = (Note 1) (IC = −100 mAdc, IB = −5.0 mAdc, (Note 2) Base − Emitter Saturation Voltage (IC = −100 mAdc, IB = −5.0 mAdc) Base−Emitter On Voltage (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −100 mAdc, VCE = −5.0 Vdc) (IC = −2.0 mAdc, VCE = −5.0 Vdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Small−Signal Current Gain (IC = −2.0 mAdc, VCE = −5.0 V, f = 1.0 kHz) Noise Figure (IC = −200 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz) (IC = −200 mAdc, VCE = −5.0 Vdc, RS = 100 kW, f = 1.0 kHz, Df = 200 kHz) 1. IB is value for which IC = −11 mA at VCE = −1.0 V. 2. Pulse test = 300 ms − Duty cycle = 2%. fT Ccbo hfe − − 450 − − 250 2.5 600 0.5 − − − 900 2.0 10 MHz pF pF dB hFE 100 380 − − − − − − −0.55 270 500 −0.075 −0.3 −0.25 −1.1 −0.52 −0.55 −0.62 − 800 −0.25 −0.6 − − − − −0.7 − V(BR)CEO V(BR)CBO V(BR)EBO ICBO −45 −50 −5.0 − − − − − − Vdc Vdc Vdc Symbol Min Typ Max Unit
− − −
− − −
−15 −5.0 −15
nAdc mAdc nAdc
IEBO
VCE(sat)
Vdc
VBE(sat) VBE(on)
Vdc Vdc
NF1 NF2
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2
BC560C
2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 -0.2 VCE = -10 V TA = 25°C V, VOLTAGE (VOLTS) -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 VCE(sat) @ IC/IB = 10 TA = 25°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -10 V
-0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc)
-50
-100
Figure 1. Normalized DC Current Gain
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
Figure 2. “Saturation” and “On” Voltages
400 300 200 C, CAPACITANCE (pF)
10 7.0 5.0 Cib TA = 25°C
100 80 60 40 30 20
VCE = -10 V TA = 25°C
3.0 Cob 2.0
-0.5 -0.7 -1.0
-2.0 -5.0 -7.0 -10 -20 IC, COLLECTOR CURRENT (mAdc)
-50
1.0 -0.4 -0.6
-1.0
-2.0 -4.0 -10 VR, REVERSE VOLTAGE (VOLTS)
-20
-40
Figure 3. Current−Gain — Bandwidth Product
Figure 4. Capacitance
r b, BASE SPREADING RESISTANCE (OHMS)
170 160
150 VCE = -10 V f = 1.0 kHz TA = 25°C
140
130
120 -0.1
-0.2
-0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mAdc)
-5.0
-10
Figure 5. Base Spreading Resistance
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BC560C
PACKAGE DIMENSIONS
TO−92 (TO−226) CASE 29−11 ISSUE AM
A R P L
SEATING PLANE
B
STRAIGHT LEAD BULK PACK
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 ---
K
XX H V
1
D G J C N N SECTION X−X
DIM A B C D G H J K L N P R V
R
A
B
BENT LEAD TAPE & REEL AMMO PACK
P T
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER
K
G
XX V
1
D J C N SECTION X−X
DIM A B C D G J K N P R V
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4
BC560C/D
