DATA SHEET
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PNP Epitaxial Silicon
Transistor
BC636
TO−92−3
CASE 135AR
1
Features
• Switching and Amplifier Applications
• Complement to BC635
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Bent Lead
2
3
1. Emitter
2. Collector
3. Base
Compliant
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS
(Values are at TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector−Emitter Voltage at
RBE = 1 kW
VCER
−45
V
Collector−Emitter Voltage
VCES
−45
V
Collector−Emitter Voltage
VCEO
−45
V
Emitter−Base Voltage
VEBO
−5
V
Collector Current
IC
−1
A
Peak Collector Current
ICP
−1.5
A
Base Current
IB
−100
mA
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
−65 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ABC
636
YWW
A
= Assembly Code
BC636 = Device Code
YWW = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
THERMAL CHARACTERISTICS (Note 1)
(Values are at TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Power Dissipation
PD
1
W
Dissipation Derate Above 25°C
PD
8
mW/°C
RqJA
125
°C/W
Thermal Resistance, Junction−to−Ambient
1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)
with minimum land pattern size.
© Semiconductor Components Industries, LLC, 2004
November, 2021 − Rev. 3
1
Publication Order Number:
BC636/D
BC636
ELECTRICAL CHARACTERISTICS
(Values are at TA = 25°C unless otherwise noted)
Symbol
Parameter
BVCEO
Conditions
Min.
Typ.
Max.
Unit
Collector−Emitter Breakdown Voltage
IC = −10 mA, IB = 0
ICBO
Collector Cut−Off Current
VCB = −30 V, IE = 0
−45
−0.1
mA
IEBO
Emitter Cut−Off Current
VEB = −5 V, IC = 0
−10
mA
hFE1
DC Current Gain
VCE = −2 V, IC = −5 mA
25
hFE2
VCE = −2 V, IC = −150 mA
40
hFE3
VCE = −2 V, IC = −500 mA
25
V
250
VCE(sat)
Collector−Emitter Saturation Voltage
IC = −500 mA, IB = −50 mA
−0.5
V
VBE(on)
Base−Emitter On Voltage
VCE = −2 V, IC = −500 mA
−1
V
Current Gain Bandwidth Product
VCE = −5 V, IC = −10 mA, f = 50 MHz
fT
100
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
BC636TA
Top Mark
Package
Shipping
BC636
TO−92−3, case 135AR (Pb−Free)
2,000 Units / Fan Fold
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2
BC636
TYPICAL PERFORMANCE CHARACTERISTICS
1000
−500
IC, COLLECTOR CURRENT [mA]
IB = − 1.8 mA
VCE = − 2V
hFE, DC CURRENT GAIN
IB = − 1.6 mA
−400
IB = − 1.4 mA
IB = − 1.2 mA
−300
IB = − 1.0 mA
IB = − 0.8 mA
−200
IB = − 0.6 mA
IB = − 0.4 mA
−100
IB = − 0.2 mA
100
10
0
0
−10
−20
−30
−40
−50
−1
−10
VBE(sat)
−0.1
VCE(sat)
−100
−1000
−100
−10
0
−0.4
−0.6
−0.8
−1.0
−1.2
Figure 4. Base−Emitter On Voltage
100
f=1MHz
10
−10
−0.2
VBE, BASE−EMITTER VOLTAGE [V]
Figure 3. Base−Emitter Saturation Voltage and
Collector−Emitter Saturation Voltage
Cob, CAPACITANCE [pF]
VCE = − 2V
−1
−10
IC, COLLECTOR CURRENT [mA]
1
−1
−1000
−1000
IC = 10 IB
−0.01
−1
−100
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT [mA]
VBE(sat), VCE(sat), SATURATION VOLTAGE [V]
Figure 1. Static Characteristic
−1
−10
IC, COLLECTOR CURRENT [mA]
VCE, COLLECTOR−EMITTER VOLTAGE [V]
−100
VCB, COLLECTOR−BASE VOLTAGE [V]
Figure 5. Collector Output Capacitance
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 4.83x4.76 LEADFORMED
CASE 135AR
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13879G
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
TO−92 3 4.83X4.76 LEADFORMED
PAGE 1 OF 1
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