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BC638
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Complement to BC637
TO-92
12
3
Straight Lead
Bulk Packing
1
2
1. Emitter
2. Collector
3. Base
3
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
Top Mark
Package
Packing Method
BC638TA
BC638
TO-92 3L
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Value
Unit
VCER
Collector-Emitter Voltage at RBE = 1 K
Parameter
-60
V
VCES
Collector-Emitter Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-1
A
ICP
Peak Collector Current
-1.5
A
IB
Base Current
-100
mA
TJ
Junction Temperature
150
C
TSTG
Storage Temperature
-65 to 150
C
© 2005 Fairchild Semiconductor Corporation
BC638 Rev. 1.6
www.fairchildsemi.com
BC638 — PNP Epitaxial Silicon Transistor
June 2016
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RJA
Parameter
Value
Unit
Power Dissipation
1
W
Derate Above 25C
8
mW/C
125
C/W
Thermal Resistance, Junction-to-Ambient
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCEO
Parameter
Conditions
Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0
Min.
Typ.
Max.
Unit
-60
V
ICBO
Collector Cut-Off Current
VCB = -30 V, IE = 0
-0.1
A
IEBO
Emitter Cut-Off Current
VEB = -5 V, IC = 0
-10
A
hFE1
hFE2
DC Current Gain
hFE3
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(on)
fT
VCE = -2 V, IC = -5 mA
25
VCE = -2 V, IC = -150 mA
40
VCE = -2 V, IC = -500 mA
25
160
IC = -500 mA, IB = -50 mA
-0.5
V
Base-Emitter On Voltage
VCE = -2 V, IC = -500 mA
-1
V
Current Gain Bandwidth Product
VCE = -5 V, IC = -10 mA,
f = 50 MHz
© 2005 Fairchild Semiconductor Corporation
BC638 Rev. 1.6
100
MHz
www.fairchildsemi.com
2
BC638 — PNP Epitaxial Silicon Transistor
Thermal Characteristics(1)
1000
-500
VCE = - 2V
IB = - 1.6 mA
-400
IB = - 1.4 mA
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
IB = - 1.8 mA
IB = - 1.2 mA
IB = - 1.0 mA
-300
IB = - 0.8 mA
IB = - 0.6 mA
-200
IB = - 0.4 mA
-100
IB = - 0.2 mA
100
10
-0
-0
-10
-20
-30
-40
-1
-50
-100
-1000
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC Current Gain
-10
-1000
IC = 10 IB
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-10
VBE(sat)
-1
-0.1
VCE(sat)
-0.01
-1
-10
-100
VCE = - 2V
-100
-10
-1
-1000
-0.2
IC[mA], COLLECTOR CURRENT
-0.4
-0.6
-0.8
-1.0
-1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
Cob[pF], CAPACITANCE
f=1MHz
10
1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
© 2005 Fairchild Semiconductor Corporation
BC638 Rev. 1.6
www.fairchildsemi.com
3
BC638 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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