BC63916-D74Z

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Base 3 Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number Top Mark Package Packing Method BC63916-D74Z BC639-16 TO-92 3L Ammo BC63916-D27Z BC639-16 TO-92 3L Tape and Reel Absolute Maximum Ratings(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCER Collector-Emitter Voltage at RBE = 1 kΩ 100 V VCES Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V Collector Current 1 A -55 to 150 °C IC TJ, TSTG Operating and Storage Junction Temperature Range Note: 1. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2003 Semiconductor Components Industries, LLC. September-2017, Rev. 2 Publication Order Number: BC63916-D74Z/D Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Value Unit Power Dissipation 830 mW Derate Above TA = 25°C 6.6 mW/°C Thermal Resistance, Junction to Ambient 150 °C/W Note: 2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 100 V BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 80 V BVEBO 5.0 Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 100 nA IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 10 μA hFE1 hFE2 DC Current Gain hFE3 VCE = 2 V, IC = 5 mA 25 VCE = 2 V, IC = 150 mA 100 VCE = 2 V, IC = 500 mA 25 V 250 VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA 0.5 V VBE(on) Base-Emitter On Voltage VCE = 2 V, IC = 500 mA 1 V Current Gain Bandwidth Product VCE = 5 V, IC = 10 mA, f = 50 MHz fT www.onsemi.com 2 100 MHz BC63916 — NPN Epitaxial Silicon Transistor Thermal Characteristics(2) VBE(ON) - BASE-EMITTER ON VOLTAGE (V) 250 hFE - DC CURRENT GAIN VCE = 2 V 200 o TA = 100 C o TA = 25 C o TA = 150 C 150 o TA = 0 C 100 o TA = -55 C 50 0 1E-3 0.01 0.1 1 1.2 VCE = 2 V 1.0 o 0.8 0.6 o 0.4 o o TA = -55 C 0.2 0.0 1E-3 IC - COLLECTOR CURRENT (A) 1 0.01 0.1 1 IC = 10IB VOLTAGE (V) 0.1 VBE(SAT) - BASE-EMITTER SATURATION 10 IC = 10IB SATURATION VOLTAGE (V) 0.1 Figure 2. Base-Emitter On Voltage 1 VCE(SAT) - COLLECTOR-EMITTER 0.01 TA = 25 C TA = 0 C IC - COLLECTOR CURRENT (A) Figure 1. DC Current Gain 0.01 1E-3 TA = 150 C o TA = 100 C 1 0.1 1E-3 IC - COLLECTOR CURRENT (A) 0.01 0.1 IC - COLLECTOR CURRENT (A) Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage www.onsemi.com 3 1 BC63916 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics BC63916 — NPN Epitaxial Silicon Transistor Physical Dimensions Figure 5. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form www.onsemi.com 4 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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