BC807-16LT3

BC807-16LT3

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOT-23

  • 描述:

    TRANS PNP 45V 0.5A SOT-23

  • 详情介绍
  • 数据手册
  • 价格&库存
BC807-16LT3 数据手册
BC807−16LT1, BC807−25LT1, BC807−40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −45 V Collector − Base Voltage VCBO −50 V Emitter − Base Voltage VEBO −5.0 V IC −500 mAdc Collector Current − Continuous 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature RqJA Max Unit 1 225 1.8 mW mW/°C 556 °C/W 2 SOT−23 CASE 318 STYLE 6 PD 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. 5xx M G G 1 5xx = Device Code xx = A1, B1, or C M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2005 October, 2005 − Rev. 6 1 Publication Order Number: BC807−16LT1/D BC807−16LT1, BC807−25LT1, BC807−40LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = −10 mA) V(BR)CEO −45 − − V Collector −Emitter Breakdown Voltage (VEB = 0, IC = −10 mA) V(BR)CES −50 − − V Emitter −Base Breakdown Voltage (IE = −1.0 mA) V(BR)EBO −5.0 − − V − − − − −100 −5.0 nA mA 100 160 250 40 − − − − 250 400 600 − OFF CHARACTERISTICS Collector Cutoff Current (VCB = −20 V) (VCB = −20 V, TJ = 150°C) ICBO ON CHARACTERISTICS DC Current Gain (IC = −100 mA, VCE = −1.0 V) hFE BC807−16 BC807−25 BC807−40 (IC = −500 mA, VCE = −1.0 V) − Collector −Emitter Saturation Voltage (IC = −500 mA, IB = −50 mA) VCE(sat) − − −0.7 V Base −Emitter On Voltage (IC = −500 mA, IB = −1.0 V) VBE(on) − − −1.2 V fT 100 − − MHz Cobo − 10 −0.7 pF SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 V, f = 1.0 MHz) ORDERING INFORMATION Device Specific Marking BC807−16LT1 BC807−16LT1G BC807−16LT3 5A1 BC807−16LT3G BC807−25LT1 BC807−25LT1G BC807−25LT3 5B1 BC807−25LT3G BC807−40LT1 BC807−40LT1G Package Shipping † SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 10,000/Tape & Reel SOT−23 (Pb−Free) 10,000/Tape & Reel SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 10,000/Tape & Reel SOT−23 (Pb−Free) 10,000/Tape & Reel SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 10,000/Tape & Reel SOT−23 (Pb−Free) 10,000/Tape & Reel 5C BC807−40LT3 BC807−40LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BC807−16LT1, BC807−25LT1, BC807−40LT1 1000 hFE , DC CURRENT GAIN VCE = −1.0 V TA = 25°C 100 10 −0.1 −1.0 −10 −100 IC, COLLECTOR CURRENT (mA) −1000 −1.0 −1.0 TA = 25°C TJ = 25°C −0.8 −0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS Figure 1. DC Current Gain IC = −500 mA −0.6 −0.4 IC = −300 mA −0.2 −1.0 −10 IB, BASE CURRENT (mA) −0.6 −0.4 VCE(sat) @ IC/IB = 10 IC = −10 mA −0.1 VBE(on) @ VCE = −1.0 V −0.2 IC = −100 mA 0 −0.01 0 −1.0 −100 qVC for VCE(sat) −1.0 −1.0 −1000 100 +1.0 −2.0 −10 −100 IC, COLLECTOR CURRENT (mA) Figure 3. “On” Voltages C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 2. Saturation Region 0 VBE(sat) @ IC/IB = 10 qVB for VBE −10 −100 IC, COLLECTOR CURRENT Cib 10 Cob 1.0 −0.1 −1000 Figure 4. Temperature Coefficients −1.0 −10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances http://onsemi.com 3 −100 BC807−16LT1, BC807−25LT1, BC807−40LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com http://onsemi.com 4 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. BC807−16LT1/D
BC807-16LT3
物料型号:BC807-16LT1, BC807-25LT1, BC807-40LT1

器件简介:这些是通用目的的PNP硅晶体管。

引脚分配:SOT-23封装,引脚1为基极,引脚2为发射极,引脚3为集电极。

参数特性:包括最大额定值,如集电极-发射极电压(VCEO)为-45V,集电极-基极电压(VCBO)为-50V,发射极-基极电压(VEBO)为-5.0V,以及连续集电极电流(Ic)为-500mA。还包括热特性,如总器件耗散(Po),结到环境的热阻(ReJA)等。

功能详解:提供了电气特性,如关断特性、导通特性、小信号特性等,包括直流电流增益(hFE)、集电极-发射极饱和电压(VCE(sat))、基极-发射极导通电压(VBE(on))等。

应用信息:文档提供了订购信息,包括特定标记、封装类型和运输方式。

封装信息:SOT-23 (TO-236) CASE 318-08,提供了详细的封装尺寸。
BC807-16LT3 价格&库存

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