BC807−16LT1,
BC807−25LT1, BC807−40LT1
General Purpose
Transistors
PNP Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
−45
V
Collector − Base Voltage
VCBO
−50
V
Emitter − Base Voltage
VEBO
−5.0
V
IC
−500
mAdc
Collector Current − Continuous
2
EMITTER
3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
RqJA
Max
Unit
1
225
1.8
mW
mW/°C
556
°C/W
2
SOT−23
CASE 318
STYLE 6
PD
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
5xx M G
G
1
5xx = Device Code
xx = A1, B1, or C
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 6
1
Publication Order Number:
BC807−16LT1/D
BC807−16LT1, BC807−25LT1, BC807−40LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
V(BR)CEO
−45
−
−
V
Collector −Emitter Breakdown Voltage
(VEB = 0, IC = −10 mA)
V(BR)CES
−50
−
−
V
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
V(BR)EBO
−5.0
−
−
V
−
−
−
−
−100
−5.0
nA
mA
100
160
250
40
−
−
−
−
250
400
600
−
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = −20 V)
(VCB = −20 V, TJ = 150°C)
ICBO
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mA, VCE = −1.0 V)
hFE
BC807−16
BC807−25
BC807−40
(IC = −500 mA, VCE = −1.0 V)
−
Collector −Emitter Saturation Voltage
(IC = −500 mA, IB = −50 mA)
VCE(sat)
−
−
−0.7
V
Base −Emitter On Voltage
(IC = −500 mA, IB = −1.0 V)
VBE(on)
−
−
−1.2
V
fT
100
−
−
MHz
Cobo
−
10
−0.7
pF
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
ORDERING INFORMATION
Device
Specific Marking
BC807−16LT1
BC807−16LT1G
BC807−16LT3
5A1
BC807−16LT3G
BC807−25LT1
BC807−25LT1G
BC807−25LT3
5B1
BC807−25LT3G
BC807−40LT1
BC807−40LT1G
Package
Shipping †
SOT−23
3000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
SOT−23
10,000/Tape & Reel
SOT−23
(Pb−Free)
10,000/Tape & Reel
SOT−23
3000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
SOT−23
10,000/Tape & Reel
SOT−23
(Pb−Free)
10,000/Tape & Reel
SOT−23
3000/Tape & Reel
SOT−23
(Pb−Free)
3000/Tape & Reel
SOT−23
10,000/Tape & Reel
SOT−23
(Pb−Free)
10,000/Tape & Reel
5C
BC807−40LT3
BC807−40LT3G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
BC807−16LT1, BC807−25LT1, BC807−40LT1
1000
hFE , DC CURRENT GAIN
VCE = −1.0 V
TA = 25°C
100
10
−0.1
−1.0
−10
−100
IC, COLLECTOR CURRENT (mA)
−1000
−1.0
−1.0
TA = 25°C
TJ = 25°C
−0.8
−0.8
V, VOLTAGE (VOLTS)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS
Figure 1. DC Current Gain
IC =
−500 mA
−0.6
−0.4
IC = −300 mA
−0.2
−1.0
−10
IB, BASE CURRENT (mA)
−0.6
−0.4
VCE(sat) @ IC/IB = 10
IC = −10 mA
−0.1
VBE(on) @ VCE = −1.0 V
−0.2
IC = −100 mA
0
−0.01
0
−1.0
−100
qVC for VCE(sat)
−1.0
−1.0
−1000
100
+1.0
−2.0
−10
−100
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
C, CAPACITANCE (pF)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 2. Saturation Region
0
VBE(sat) @ IC/IB = 10
qVB for VBE
−10
−100
IC, COLLECTOR CURRENT
Cib
10
Cob
1.0
−0.1
−1000
Figure 4. Temperature Coefficients
−1.0
−10
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
http://onsemi.com
3
−100
BC807−16LT1, BC807−25LT1, BC807−40LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
local Sales Representative.
BC807−16LT1/D