BC808-25LT1G,
BC808-40LT1G
General Purpose
Transistors
PNP Silicon
www.onsemi.com
Features
COLLECTOR
3
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
2
EMITTER
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
VCEO
−25
V
Collector − Base Voltage
VCBO
−30
V
Emitter − Base Voltage
VEBO
−5.0
V
IC
−500
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
October, 2016 − Rev. 5
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
PD
RqJA
5x M G
G
1
5x
PD
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
© Semiconductor Components Industries, LLC, 2004
1
1
M
G
= Device Code
x = F or G
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
BC808−25LT1/D
BC808−25LT1G, BC808−40LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
V(BR)CEO
−25
−
−
V
Collector −Emitter Breakdown Voltage
(VEB = 0, IC = −10 mA)
V(BR)CES
−30
−
−
V
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
V(BR)EBO
−5.0
−
−
V
−
−
−
−
−100
−5.0
nA
mA
160
250
40
−
−
−
400
600
−
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = −20 V)
(VCB = −20 V, TJ = 150°C)
ICBO
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mA, VCE = −1.0 V)
hFE
BC808−25LT1G
BC808−40LT1G
(IC = −500 mA, VCE = −1.0 V)
−
Collector −Emitter Saturation Voltage
(IC = −500 mA, IB = −50 mA)
VCE(sat)
−
−
−0.7
V
Base −Emitter On Voltage
(IC = −500 mA, IB = −1.0 V)
VBE(on)
−
−
−1.2
V
fT
100
−
−
MHz
Cobo
−
10
−
pF
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
BC808−25LT1G
SBC808−25LT1G
BC808−40LT1G
Specific Marking
Package
Shipping†
5F
SOT−23
(Pb−Free)
3000 / Tape & Reel
5G
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
BC808−25LT1G, BC808−40LT1G
1000
hFE, DC CURRENT GAIN
VCE = -1.0 V
TA = 25°C
100
10
-0.1
-1.0
-10
-100
IC, COLLECTOR CURRENT (mA)
-1000
-1.0
-1.0
TA = 25°C
TJ = 25°C
-0.8
-0.8
V, VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
IC =
-500 mA
-0.6
-0.4
IC = -300 mA
-0.2
-1.0
-10
IB, BASE CURRENT (mA)
-0.4
VCE(sat) @ IC/IB = 10
IC = -10 mA
-0.1
VBE(on) @ VCE = -1.0 V
-0.6
-0.2
IC = -100 mA
0
-0.01
0
-1.0
-100
-1000
100
+1.0
qVC for VCE(sat)
0
-1.0
-1.0
-10
-100
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
C, CAPACITANCE (pF)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 2. Saturation Region
-2.0
VBE(sat) @ IC/IB = 10
qVB for VBE
-10
-100
IC, COLLECTOR CURRENT
Cib
10
Cob
1.0
-0.1
-1000
Figure 4. Temperature Coefficients
-1.0
-10
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
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3
-100
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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