BC817-25LT3G

BC817-16LT1G, BC817-25LT1G, BC817-40LT1G General Purpose Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC Value 45 50 5.0 500 Unit V V V mAdc 1 2 SOT−23 CASE 318 STYLE 6 3 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 Unit mW mW/°C °C/W MARKING DIAGRAM RqJA PD 300 2.4 RqJA TJ, Tstg 417 − 55 to +150 mW mW/°C °C/W °C 6x M G 6x M G G 1 = Device Code x = A, B, or C = Date Code* = Pb−Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 11 1 Publication Order Number: BC817−16LT1/D BC817−16LT1G, BC817−25LT1G, BC817−40LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mA) Collector − Emitter Breakdown Voltage (VEB = 0, IC = 10 mA) Emitter − Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 1.0 V) Collector − Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) Base − Emitter On Voltage (IC = 500 mA, VCE = 1.0 V) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) fT Cobo 100 − − 10 − − MHz pF BC817−16 BC817−25 BC817−40 hFE 100 160 250 40 − − − − − − − − 250 400 600 − 0.7 1.2 − V(BR)CEO V(BR)CES V(BR)EBO ICBO 45 50 5.0 − − − − − − V V V Symbol Min Typ Max Unit − − − − 100 5.0 nA mA VCE(sat) VBE(on) V V ORDERING INFORMATION Device BC817−16LT1G BC817−16LT3G BC817−25LT1G BC817−25LT3G BC817−40LT1G BC817−40LT3G 6C 6B 6A Specific Marking Package SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) Shipping† 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BC817−16LT1G, BC817−25LT1G, BC817−40LT1G TYPICAL CHARACTERISTICS − BC817−16LT1 300 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 150°C hFE, DC CURRENT GAIN VCE = 1 V 1 IC/IB = 10 200 25°C 25°C 0.1 150°C −55°C 100 −55°C 0 0.001 0.01 0.1 1 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 150°C IC/IB = 10 −55°C 25°C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current VCE = 5 V −55°C 25°C 150°C 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current http://onsemi.com 3 BC817−16LT1G, BC817−25LT1G, BC817−40LT1G TYPICAL CHARACTERISTICS − BC817−16LT1 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 θV, TEMPERATURE COEFFICIENTS (mV/°C) +1 qVC for VCE(sat) 0 0.6 IC = 10 mA 100 mA 300 mA 500 mA -1 0.4 0.2 0 0.01 -2 qVB for VBE 0.1 1 IB, BASE CURRENT (mA) 10 100 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 5. Saturation Region Figure 6. Temperature Coefficients 100 C, CAPACITANCE (pF) Cib 10 Cob 1 0.1 10 1 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 7. Capacitances http://onsemi.com 4 BC817−16LT1G, BC817−25LT1G, BC817−40LT1G TYPICAL CHARACTERISTICS − BC817−25LT1 500 400 300 200 −55°C 100 0 150°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 1 IC/IB = 10 hFE, DC CURRENT GAIN 150°C 25°C 0.1 −55°C 25°C 0.001 0.01 0.1 1 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 8. DC Current Gain vs. Collector Current −55°C 25°C 150°C VBE(on), BASE−EMITTER VOLTAGE (V) 1.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 IC/IB = 10 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 9. Collector Emitter Saturation Voltage vs. Collector Current VCE = 5 V −55°C 25°C 150°C 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Base Emitter Saturation Voltage vs. Collector Current 1000 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) VCE = 1 V TA = 25°C Figure 11. Base Emitter Voltage vs. Collector Current 100 10 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 12. Current Gain Bandwidth Product vs. Collector Current http://onsemi.com 5 BC817−16LT1G, BC817−25LT1G, BC817−40LT1G TYPICAL CHARACTERISTICS − BC817−25LT1 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 θV, TEMPERATURE COEFFICIENTS (mV/°C) +1 qVC for VCE(sat) 0 0.6 IC = 10 mA 100 mA 300 mA 500 mA -1 0.4 0.2 0 0.01 -2 qVB for VBE 0.1 1 IB, BASE CURRENT (mA) 10 100 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 13. Saturation Region Figure 14. Temperature Coefficients 100 C, CAPACITANCE (pF) Cib 10 Cob 1 0.1 10 1 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 15. Capacitances http://onsemi.com 6 BC817−16LT1G, BC817−25LT1G, BC817−40LT1G TYPICAL CHARACTERISTICS − BC817−40LT1 700 600 hFE, DC CURRENT GAIN 500 400 300 200 100 0 0.001 0.01 0.1 1 25°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 150°C VCE = 1 V 1 IC/IB = 10 150°C 0.1 25°C −55°C −55°C 0.01 0.001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 16. DC Current Gain vs. Collector Current −55°C VBE(on), BASE−EMITTER VOLTAGE (V) 1.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 150°C 25°C IC/IB = 10 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 17. Collector Emitter Saturation Voltage vs. Collector Current VCE = 5 V −55°C 25°C 150°C 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 18. Base Emitter Saturation Voltage vs. Collector Current 1000 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) VCE = 1 V TA = 25°C Figure 19. Base Emitter Voltage vs. Collector Current 100 10 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 20. Current Gain Bandwidth Product vs. Collector Current http://onsemi.com 7 BC817−16LT1G, BC817−25LT1G, BC817−40LT1G TYPICAL CHARACTERISTICS − BC817−40LT1 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 θV, TEMPERATURE COEFFICIENTS (mV/°C) +1 qVC for VCE(sat) 0 0.6 IC = 10 mA 100 mA 300 mA 500 mA -1 0.4 0.2 0 0.01 -2 qVB for VBE 0.1 1 IB, BASE CURRENT (mA) 10 100 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 21. Saturation Region Figure 22. Temperature Coefficients 100 C, CAPACITANCE (pF) Cib 10 Cob 1 0.1 10 1 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 23. Capacitances http://onsemi.com 8 BC817−16LT1G, BC817−25LT1G, BC817−40LT1G TYPICAL CHARACTERISTICS − BC817−16LT1, BC817−25LT1, BC817−40LT1 1 1s Thermal Limit 0.1 IC (A) 100 ms 1 ms 10 ms 0.01 Single Pulse Test @ TA = 25°C 0.001 0.01 0.1 1 VCE (Vdc) 10 100 Figure 24. Safe Operating Area http://onsemi.com 9 BC817−16LT1G, BC817−25LT1G, BC817−40LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 10 BC817−16LT1/D