BC846AMTF

Features • • • • 3 Switching and Amplifier Applications Suitable for Automatic Insertion in Thick and Thin-film Circuits Low Noise: BC850 Complement to BC856, BC857, BC858, BC859, and BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information(1) Part Number Marking Package Packing Method BC846AMTF 8AA SOT-23 3L Tape and Reel BC846BMTF 8AB SOT-23 3L Tape and Reel BC846CMTF 8AC SOT-23 3L Tape and Reel BC847AMTF 8BA SOT-23 3L Tape and Reel BC847BMTF 8BB SOT-23 3L Tape and Reel BC847CMTF 8BC SOT-23 3L Tape and Reel BC848BMTF 8CB SOT-23 3L Tape and Reel BC848CMTF 8CC SOT-23 3L Tape and Reel BC850AMTF 8EA SOT-23 3L Tape and Reel BC850CMTF 8EC SOT-23 3L Tape and Reel Note: 1. Affix “-A,-B,-C” means hFE classification. Affix “-M” means SOT-23 package. Affix “-TF” means the tape and reel type packing. © 2002 Semiconductor Components Industries, LLC. September-2017, Rev. 2 1 Publication Order Number: BC846/D BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor BC846 / BC847 / BC848 / BC850 NPN Epitaxial Silicon Transistor Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) TJ Junction Temperature TSTG Value BC846 80 BC847 / BC850 50 BC848 30 BC846 65 BC847 / BC850 45 BC848 30 BC846 / BC847 6 BC848 / BC850 5 Unit V V V 100 mA 150 °C -65 to +150 °C Value Unit Power Dissipation 310 mW Derate Above 25°C 2.48 mW/°C Thermal Resistance, Junction-to-Ambient 403 °C/W Storage Temperature Range Thermal Characteristics(2) Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Note: 2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. www.onsemi.com 2 BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit 15 nA ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 hFE DC Current Gain VCE = 5 V, IC = 2 mA VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 90 250 IC = 100 mA, IB = 5 mA 200 600 VBE(sat) Collector-Base Saturation Voltage VBE(on) Base-Emitter On Voltage 110 800 IC = 10 mA, IB = 0.5 mA 700 IC = 100 mA, IB = 5 mA 900 VCE = 5 V, IC = 2 mA 580 660 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 10 mA, f = 100 MHz 300 Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 3.5 Cib Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz NF Noise Figure BC846 / BC847 / BC848 VCE = 5 V, IC = 200 μA, RG = 2 kΩ, f = 1 kHz BC850 VCE = 5 V, IC = 200 μA, RG = 2 kΩ, f = 30 to 15000 Hz BC850 mV 700 720 Current Gain Bandwidth Product fT mV MHz 6.0 9 pF pF 2.0 10.0 1.2 4.0 1.4 3.0 Note: 3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2% hFE Classification Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 www.onsemi.com 3 mV dB BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor Electrical Characteristics(3) 1000 IB = 400μA IB = 350μA 80 IB = 300μA IB = 250μA 60 VCE = 5V o TA = 150 C hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 100 IB = 200μA IB = 150μA 40 IB = 100μA o TA = 25 C 100 o TA = -55 C 20 IB = 50μA 10 0.1 0 0 4 8 12 16 20 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic 1000 0.1 o TA = 150 C o TA = 25 C o TA = -55 C 0.01 0.1 1 10 100 IC = 20IB SATURATION VOLTAGE VCE(SAT) [V], COLLECTOR-EMITTER SATURATION VOLTAGE VCE(SAT) [V], COLLECTOR-EMITTER 100 10 IC = 10IB 1 0.1 0.01 0.1 1.0 o TA = -55 C o TA = 25 C o TA = 150 C 1 10 100 10 100 1000 1000 Figure 4. Collector-Emitter Saturation Voltage VBE(SAT) [V], BASE-EMITTER SATURATION VOLTAGE IC = 10IB 0.4 1 IC [mA], COLLECTOR CURRENT 1.2 0.6 TA = 25 C o TA = -55 C 1000 Figure 3. Collector-Emitter Saturation Voltage 0.8 o TA = 150 C o IC [mA], COLLECTOR CURRENT VBE(SAT) [V], BASE-EMITTER SATURATION VOLTAGE 10 Figure 2. DC Current Gain 1 0.2 0.1 1 IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT 1.2 IC = 20IB 1.0 0.8 o TA = -55 C o TA = 25 C 0.6 0.4 0.2 0.1 o TA = 150 C 1 10 100 1000 IC [mA], COLLECTOR CURRENT Figure 5. Base-Emitter Saturation Voltage www.onsemi.com 4 Figure 6. Base-Emitter Saturation Voltage BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics 100 VCE = 5V f=1MHz Cob[pF], CAPACITANCE IC [mA], COLLECTOR CURRENT 100 10 o o TA = 150 C 1 0.1 0.0 o TA = 25 C TA = -55 C 0.4 0.6 0.8 1.0 1.2 1 VCE=5V 100 10 10 100 Figure 8. Collector Output Capacitance 1000 1 10 VCB[V], COLLECTOR-BASE VOLTAGE Figure 7. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1 0.1 0.2 VBE(ON) [V], BASE-EMITTER ON VOLTAGE 1 0.1 10 100 IC[mA], COLLECTOR CURRENT Figure 9. Current Gain Bandwidth Product www.onsemi.com 5 1000 BC846 / BC847 / BC848 / BC850 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com