BC846BDW1T1G

BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features (3) http://onsemi.com (2) (1) Q1 Q2 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc 6 (4) (5) (6) MARKING DIAGRAM 1 SOT−363 CASE 419B STYLE 1 1x MG G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1x = Specific Device Code x = B, F, G, L M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR− 5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR−5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380 250 Unit mW ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. 3.0 RqJA TJ, Tstg 328 − 55 to +150 mW/°C °C/W °C © Semiconductor Components Industries, LLC, 2010 July, 2010 − Rev. 7 1 Publication Order Number: BC846BDW1T1/D BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mA) BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series V(BR)CEO V 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 − − − − − − − − − − − − − − − − − − − V − − − V − − − V − − − 15 5.0 nA mA Symbol Min Typ Max Unit Collector − Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) V(BR)CES Collector − Base Breakdown Voltage (IC = 10 mA) V(BR)CBO Emitter − Base Breakdown Voltage (IE = 1.0 mA) V(BR)EBO Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) BC846B, BC847B, BC847C, BC848C BC846B, BC847B, BC847C, BC848C ICBO hFE − − − 200 420 150 270 290 520 − − 0.7 0.9 660 − − − 450 800 0.25 0.6 − − 700 770 V V mV Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz) VCE(sat) VBE(sat) VBE(on) − − − − 580 − fT Cobo NF 100 − − − − − − 4.5 10 MHz pF dB http://onsemi.com 2 BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G TYPICAL CHARACTERISTICS − BC846BDW1T1G 600 VCE = 5 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 500 400 300 200 100 0 0.001 150°C 500 400 300 200 100 0 0.001 25°C 150°C 600 VCE = 10 V 25°C −55°C −55°C 0.01 0.1 1 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain at VCE = 5 V VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) Figure 2. DC Current Gain at VCE = 10 V 0.25 0.20 0.15 0.10 0.05 IC/IB = 10 0.3 0.25 0.2 0.15 0.1 0.05 0 0.0001 25°C 150°C IC/IB = 20 150°C 25°C −55°C −55°C 0.001 0.01 0.1 0.00 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. VCE(sat) at IC/IB = 10 VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) Figure 4. VCE(sat) at IC/IB = 20 1.10 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 IC/IB = 10 −55°C 25°C 150°C 1.10 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 IC/IB = 20 −55°C 25°C 150°C 0.20 0.0001 0.001 0.01 0.1 0.20 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. VBE(sat) at IC/IB = 10 http://onsemi.com 3 Figure 6. VBE(sat) at IC/IB = 20 BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G TYPICAL CHARACTERISTICS − BC846BDW1T1G 1.20 VBE(on), BASE−EMITTER VOLTAGE (V) 1.10 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.0001 0.001 0.01 150°C −55°C 25°C 1000 fT, CURRENT−GAIN − BANDWIDTH PRODUCT VCE = 5 V VCE = 10 V TA = 25°C 100 0.1 10 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 7. VBE(on) at VCE = 5 V Figure 8. Current − Gain − Bandwidth Product 10 TA = 25°C VCE, COLLECTOR−EMITTER VOLTAGE (V) C, CAPACITANCE (pF) Cib 2 1.6 1.2 0.8 0.4 0 0.01 TA = 25°C IC = 10 mA IC = 50 mA IC = 100 mA IC = 20 mA Cob 1 0.1 1 10 100 0.1 1 10 100 VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA) Figure 9. Capacitances Figure 10. Collector Saturation Region qVB, TEMPERATURE COEFFICIENT (mV/°C) −0.2 −0.6 −1 −1.4 −1.8 −2.2 −2.6 −3 0.1 VCE = 5 V qVB, for VBE −55°C to 150°C Figure 11. Base−Emitter Temperature Coefficient 1 10 IB, BASE CURRENT (mA) 100 http://onsemi.com 4 BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G TYPICAL CHARACTERISTICS − BC847BDW1T1G 600 500 400 300 200 100 0 0.0001 25°C 150°C hFE, DC CURRENT GAIN 600 500 400 300 200 100 0 0.0001 25°C 150°C VCE = 5 V VCE = 10 V hFE, DC CURRENT GAIN −55°C −55°C 0.001 0.01 0.1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 12. DC Current Gain at VCE = 5 V VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) 0.25 0.20 0.15 0.10 0.05 −55°C 0.00 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) 0.30 0.25 0.20 0.15 0.10 0.05 Figure 13. DC Current Gain at VCE = 10 V IC/IB = 10 IC/IB = 20 25°C 25°C 150°C 150°C −55°C 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 0.00 0.0001 Figure 14. VCE at IC/IB = 10 Figure 15. VCE at IC/IB = 20 VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) 1.20 1.00 0.80 0.60 0.40 0.20 IC/IB = 10 1.20 1.00 0.80 0.60 0.40 0.20 IC/IB = 20 −55°C 25°C 150°C −55°C 25°C 150°C 0.00 0.0001 0.001 0.01 0.1 0.00 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 16. VBE(sat) at IC/IB = 10 Figure 17. VBE(sat) at IC/IB = 20 http://onsemi.com 5 BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G TYPICAL CHARACTERISTICS − BC847BDW1T1G 1.20 VBE(on), BASE−EMITTER VOLTAGE (V) 1.10 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) 150°C −55°C 25°C 1000 fT, CURRENT−GAIN − BANDWIDTH PRODUCT VCE = 5 V VCE = 10 V TA = 25°C 100 0.1 10 0.1 1 10 100 Figure 18. VBE(on) at VCE = 5 V IC, COLLECTOR CURRENT (A) Figure 19. Current − Gain − Bandwidth Product 2 VCE, COLLECTOR−EMITTER VOLTAGE (V) 1.6 1.2 0.8 0.4 0 0.01 10 TA = 25°C Cib TA = 25°C IC = 10 mA IC = 100 mA C, CAPACITANCE (pF) IC = 20 mA IC = 50 mA Cob 1 0.1 1 10 100 0.1 1 10 100 VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA) Figure 20. Capacitances Figure 21. Collector Saturation Region qVB, TEMPERATURE COEFFICIENT (mV/°C) −0.2 −0.6 −1 −1.4 −1.8 −2.2 −2.6 −3 0.1 VCE = 5 V qVB, for VBE −55°C to 150°C 1 10 100 IB, BASE CURRENT (mA) Figure 22. Base−Emitter Temperature Coefficient http://onsemi.com 6 BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G TYPICAL CHARACTERISTICS − BC848CDW1T1G 1000 900 hFE, DC CURRENT GAIN 800 700 600 500 400 300 200 100 0 0.0001 0.001 0.01 0.1 1 −55°C 25°C 150°C 1000 900 hFE, DC CURRENT GAIN 800 700 600 500 400 300 200 100 0 0.0001 0.001 0.01 0.1 1 −55°C 25°C VCE = 5 V 150°C VCE = 10 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 23. DC Current Gain at VCE = 5 V Figure 24. DC Current Gain at VCE = 10 V VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 IC/IB = 10 0.30 0.25 0.20 0.15 0.10 0.05 IC/IB = 20 150°C 25°C −55°C 25°C 150°C −55°C 0.001 0.01 0.1 0.00 0.0001 0.001 0.01 0.1 0.00 0.0001 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 25. VCE at IC/IB = 10 VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) Figure 26. VCE at IC/IB = 20 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 IC/IB = 10 1.2 1.0 0.8 0.6 0.4 0.2 IC/IB = 20 −55°C 25°C −55°C 25°C 150°C 150°C 0.2 0.0001 0.001 0.01 0.1 0.0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 27. VBE(sat) at IC/IB = 10 Figure 28. VBE(sat) at IC/IB = 20 http://onsemi.com 7 BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G TYPICAL CHARACTERISTICS − BC848CDW1T1G 1.0 VBE(on), BASE−EMITTER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0001 0.001 0.01 150°C 1000 −55°C 25°C fT, CURRENT−GAIN − BANDWIDTH PRODUCT VCE = 5 V VCE = 10 V TA = 25°C 100 0.1 10 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 29. VBE(on) at VCE = 5 V Figure 30. Current − Gain − Bandwidth Product 2 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC = 1.6 10 mA 1.2 0.8 0.4 0 0.01 IC = 20 mA 10 TA = 25°C Cib TA = 25°C C, CAPACITANCE (pF) IC = 50 mA IC = 100 mA Cob 1 0.1 1 10 100 0.1 1 10 100 VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA) Figure 31. Capacitances Figure 32. Collector Saturation Region qVB, TEMPERATURE COEFFICIENT (mV/°C) −0.2 −0.6 −1 −1.4 −1.8 −2.2 −2.6 −3 0.1 VCE = 5 V qVB, for VBE −55°C to 150°C Figure 33. Base−Emitter Temperature Coefficient 1 10 IB, BASE CURRENT (mA) 100 http://onsemi.com 8 BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G 1.0 D = 0.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.1 0.05 0.02 0.01 0.01 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.001 0 1.0 10 100 t, TIME (ms) 1.0 k 10 k 100 k 1.0 M ZqJA(t) = r(t) RqJA RqJA = 3285C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 0.1 Figure 34. Thermal Response -200 1s IC, COLLECTOR CURRENT (mA) -100 -50 TA = 25°C TJ = 25°C 3 ms -10 -5.0 BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) -2.0 -1.0 The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 35 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150 ° C. T J(pk) m ay be calculated from the data in Figure 34. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. Figure 35. Active Region Safe Operating Area ORDERING INFORMATION Device BC846BDW1T1G BC847BDW1T1G BC847BDW1T3G BC847CDW1T1G BC848CDW1T1G Markings 1B 1F 1F 1G 1L Package SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) SOT−363 (Pb−Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel 10000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 9 BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G PACKAGE DIMENSIONS SC−88 (SC70−6/SOT−363) CASE 419B−02 ISSUE W e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D 6 5 4 HE 1 2 3 −E− b 6 PL 0.2 (0.008) M E M A3 C A DIM A A1 A3 b C D E e L HE MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 A1 L STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 10 BC846BDW1T1/D