BC846BLT1G

BC846ALT1G Series General Purpose Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO Value 65 45 30 Vdc 80 50 30 Vdc 6.0 6.0 5.0 100 mAdc Unit Vdc 3 1 2 • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • ESD Rating − Machine Model: >400 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector-Emitter Voltage BC846 BC847, BC850 BC848, BC849 Collector−Base Voltage BC846 BC847, BC850 BC848, BC849 Emitter−Base Voltage BC846 BC847, BC850 BC848, BC849 Collector Current − Continuous VCBO SOT−23 CASE 318 STYLE 6 VEBO MARKING DIAGRAM IC Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. XX M G G 1 XX = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range Symbol PD Max 225 Unit mW 1.8 RqJA PD 556 300 mW/°C °C/W mW ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. 2.4 RqJA TJ, Tstg 417 − 55 to +150 mW/°C °C/W °C 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in 99.5% alumina. © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 10 1 Publication Order Number: BC846ALT1/D BC846ALT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector − Emitter Breakdown Voltage BC846A,B (IC = 10 mA, VEB = 0) BC847A,B,C BC850B,C BC848A,B,C, BC849B,C Collector − Base Breakdown Voltage (IC = 10 mA) Emitter − Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 30 V) ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C VCE(sat) VBE(sat) VBE(on) hFE − − − 110 200 420 − − − − 580 − 90 150 270 180 290 520 − − 0.7 0.9 660 − − − − 220 450 800 0.25 0.6 − − 700 770 V V mV − BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C (VCB = 30 V, TA = 150°C) V(BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 − − − − − − − − − − − − − − − − − − − − − − − − − − − − 15 5.0 V Symbol Min Typ Max Unit V(BR)CES V V(BR)CBO V V(BR)EBO V ICBO nA mA Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) BC846A,B, BC847A,B,C, BC848A,B,C BC849B,C, BC850B,C fT Cobo NF 100 − − − − − − − − 4.5 10 4.0 MHz pF dB http://onsemi.com 2 BC846ALT1G Series BC846A, BC847A, BC848A 300 150°C 0.18 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.0001 0.001 0.01 0.1 −55°C 25°C IC/IB = 20 150°C hFE, DC CURRENT GAIN 200 25°C 100 −55°C 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Current −55°C 25°C VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 150°C IC/IB = 20 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current VCE = 5 V −55°C 25°C 150°C 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current http://onsemi.com 3 BC846ALT1G Series BC846A, BC847A, BC848A 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA θVB, TEMPERATURE COEFFICIENT (mV/ °C) 1.0 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.4 0 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 5. Collector Saturation Region 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25°C f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200 Figure 6. Base−Emitter Temperature Coefficient 3.0 Cob 2.0 100 80 60 40 30 20 0.5 0.7 VCE = 10 V TA = 25°C 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 40 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 7. Capacitances Figure 8. Current−Gain − Bandwidth Product http://onsemi.com 4 BC846ALT1G Series BC846B 600 500 400 300 200 100 0 −55°C 150°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 0.30 IC/IB = 20 0.25 0.20 25°C 0.15 0.10 −55°C 0.05 0 150°C hFE, DC CURRENT GAIN 25°C 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 9. DC Current Gain vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC/IB = 20 −55°C 25°C 150°C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 10. Collector Emitter Saturation Voltage vs. Collector Current VCE = 5 V −55°C 25°C 150°C 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Base Emitter Saturation Voltage vs. Collector Current Figure 12. Base Emitter Voltage vs. Collector Current http://onsemi.com 5 BC846ALT1G Series BC846B VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TA = 25°C 1.6 20 mA 1.2 IC = 10 mA 50 mA 100 mA 200 mA θVB, TEMPERATURE COEFFICIENT (mV/ °C) 1.0 1.4 1.8 qVB for VBE 2.2 -55°C to 125°C 0.8 0.4 2.6 0 3.0 0.2 0.5 10 20 50 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) 100 200 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 Figure 13. Collector Saturation Region Figure 14. Base−Emitter Temperature Coefficient TA = 25°C C, CAPACITANCE (pF) 20 Cib 10 6.0 4.0 Cob f T, CURRENT-GAIN - BANDWIDTH PRODUCT 40 500 VCE = 5 V TA = 25°C 200 100 50 20 2.0 0.1 0.2 0.5 5.0 20 1.0 2.0 10 VR, REVERSE VOLTAGE (VOLTS) 50 100 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 15. Capacitance Figure 16. Current−Gain − Bandwidth Product http://onsemi.com 6 BC846ALT1G Series BC847B, BC848B, BC849B, BC850B 600 500 400 25°C 300 200 100 0 −55°C 150°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 0.30 IC/IB = 20 0.25 0.20 25°C 0.15 0.10 −55°C 0.05 0 150°C hFE, DC CURRENT GAIN 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 17. DC Current Gain vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.1 1.0 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC/IB = 20 −55°C 25°C 150°C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 18. Collector Emitter Saturation Voltage vs. Collector Current VCE = 5 V −55°C 25°C 150°C 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 19. Base Emitter Saturation Voltage vs. Collector Current Figure 20. Base Emitter Voltage vs. Collector Current http://onsemi.com 7 BC846ALT1G Series BC847B, BC848B, BC849B, BC850B 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA θVB, TEMPERATURE COEFFICIENT (mV/ °C) 1.0 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.4 0 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 21. Collector Saturation Region Figure 22. Base−Emitter Temperature Coefficient f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25°C 3.0 Cob 2.0 100 80 60 40 30 20 0.5 0.7 VCE = 10 V TA = 25°C 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 40 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 23. Capacitances Figure 24. Current−Gain − Bandwidth Product http://onsemi.com 8 BC846ALT1G Series BC847C, BC848C, BC849C, BC850C 1000 900 hFE, DC CURRENT GAIN 800 700 600 500 400 −55°C 300 200 100 0 0.001 0.01 0.1 1 25°C 150°C 0.30 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V IC/IB = 20 0.25 0.20 25°C 0.15 0.10 −55°C 0.05 0 150°C 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 25. DC Current Gain vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.1 1.0 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC/IB = 20 −55°C 25°C 150°C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 26. Collector Emitter Saturation Voltage vs. Collector Current VCE = 5 V −55°C 25°C 150°C 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 27. Base Emitter Saturation Voltage vs. Collector Current Figure 28. Base Emitter Voltage vs. Collector Current http://onsemi.com 9 BC846ALT1G Series BC847C, BC848C, BC849C, BC850C 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA θVB, TEMPERATURE COEFFICIENT (mV/ °C) 1.0 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.4 0 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 29. Collector Saturation Region Figure 30. Base−Emitter Temperature Coefficient f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25°C 3.0 Cob 2.0 100 80 60 40 30 20 0.5 0.7 VCE = 10 V TA = 25°C 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 40 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 31. Capacitances Figure 32. Current−Gain − Bandwidth Product http://onsemi.com 10 BC846ALT1G Series 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 100 mS 10 mS 0.1 1S 1 100 mS 10 mS 0.1 1 mS 1S 1 mS Thermal Limit 0.01 Thermal Limit 0.01 0.001 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) 100 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 33. Safe Operating Area for BC846A, BC846B 1 IC, COLLECTOR CURRENT (A) Figure 34. Safe Operating Area for BC847A, BC847B, BC847C, BC850B, BC850C 100 mS 10 mS 0.1 1S 1 mS 0.01 Thermal Limit 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 35. Safe Operating Area for BC848A, BC848B, BC848C, BC849B, BC849C http://onsemi.com 11 BC846ALT1G Series ORDERING INFORMATION Device BC846ALT1G BC846ALT3G BC846BLT1G BC846BLT3G BC847ALT1G BC847ALT3G BC847BLT1G BC847BLT3G BC847CLT1G BC847CLT3G BC848ALT1G BC848BLT1G BC848BLT3G BC848CLT1G BC848CLT3G BC849BLT1G BC849BLT3G BC849CLT1G BC849CLT3G BC850BLT1G BC850CLT1G 2C 2B 1L 1K 1G 1F 1E 1B 1A Marking Package SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) Shipping† 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 1J 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 2F 2G 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 12 BC846ALT1G Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 13 BC846ALT1/D