BC847BM3T5G

BC847BM3T5G Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−723 package which is designed for low power surface mount applications. • This is a Pb−Free Device MAXIMUM RATINGS (TA = 25°C) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Max 45 50 6.0 100 Unit V V V mAdc 2 EMITTER 1 BASE http://onsemi.com COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR−4 Board (Note 1) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation, FR−4 Board (Note 2) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range Symbol PD 260 2.0 RqJA PD 600 4.8 RqJA TJ, Tstg 205 −55 to +150 mW mW/°C °C/W °C 480 mW mW/°C °C/W 2 1 Max Unit 3 SOT−723 CASE 631AA STYLE 1 MARKING DIAGRAM 1F M 1F = Device Code M = Date Code ORDERING INFORMATION Device BC847BM3T5G Package SOT−723 Shipping† 8000/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 1 March, 2005 − Rev. 0 Publication Order Number: BC847BM3/D BC847BM3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA) Collector −Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) Collector −Base Breakdown Voltage (IC = 10 mA) Emitter −Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V) SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) fT 100 Cobo − NF − − 10 − 4.5 dB − − pF MHz hFE − 200 VCE(sat) VBE(sat) VBE(on) − − − − 580 − 150 290 − − 0.7 0.9 660 − − 450 0.25 0.6 − − 700 770 V V mV − (VCB = 30 V) (VCB = 30 V, TA = 150°C) V(BR)CEO 45 V(BR)CES 50 V(BR)CBO 50 V(BR)EBO 6.0 ICBO − − − − − − 15 5.0 nA mA − − V − − V − − V V Symbol Min Typ Max Unit http://onsemi.com 2 BC847BM3T5G 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25°C VBE(sat) @ IC/IB = 10 Figure 1. Normalized DC Current Gain 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA 1.0 Figure 2. “Saturation” and “On” Voltages VCE , COLLECTOR−EMITTER VOLTAGE (V) θVB, TEMPERATURE COEFFICIENT (mV/ °C) −55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.4 0 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient http://onsemi.com 3 BC847BM3T5G BC847 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25°C f T, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) 400 300 200 3.0 Cob 2.0 100 80 60 40 30 20 0.5 0.7 1.0 VCE = 10 V TA = 25°C 1.0 0.4 0.6 0.8 1.0 4.0 6.0 8.0 10 2.0 VR, REVERSE VOLTAGE (VOLTS) 20 40 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 5. Capacitances Figure 6. Current−Gain − Bandwidth Product http://onsemi.com 4 BC847BM3T5G PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D b1 −Y− 3 A E 1 2 L C HE DIM A b b1 C D E e HE L e b 2X 0.08 (0.0032) X Y STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 BC847BM3T5G ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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