BC848CDXV6T1

BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications. Features (3) Q1 http://onsemi.com (2) (1) Q2 (4) (5) BC847CDXV6T1 (6) • These are Pb−Free Devices MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc 6 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. SOT−563 CASE 463A PLASTIC THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient (Note 1) Characteristic (Both Junctions Heated) Total Device Dissipation, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient (Note 1) Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad Symbol PD Max 357 2.9 350 Unit mW mW/°C °C/W MARKING DIAGRAMS 1x M G G 1 RqJA 1x Symbol PD Max 500 4.0 250 − 55 to +150 Unit mW mW/°C °C/W °C M G = Device Code x = G or M = Date Code = Pb−Free Package (Note: Microdot may be in either location) RqJA TJ, Tstg ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 2 1 Publication Order Number: BC847CDXV6T1/D BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mA) Collector − Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) Collector − Base Breakdown Voltage (IC = 10 mA) Emitter − Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz) fT Cobo NF − − 10 100 − − − − 4.5 MHz pF dB hFE − − 420 − − − − 580 − 270 520 − − 0.7 0.9 660 − − 800 0.25 0.6 − − 700 770 V V mV BC847CDXV6T1 BC848CDXV6T1 BC847CDXV6T1 BC848CDXV6T1 BC847CDXV6T1 BC848CDXV6T1 BC847CDXV6T1 BC848CDXV6T1 V(BR)CEO V 45 30 50 30 50 30 6.0 5.0 − − − − − − − − − − − − − − V − − V − − V − − 15 5.0 nA mA Symbol Min Typ Max Unit V(BR)CES V(BR)CBO V(BR)EBO ICBO VCE(sat) VBE(sat) VBE(on) ORDERING INFORMATION Device BC847CDXV6T1 BC847CDXV6T1G BC847CDXV6T5 BC847CDXV6T5G BC848CDXV6T1 BC848CDXV6T1G BC848CDXV6T5 BC848CDXV6T5G 1L 1G Specific Marking Package SOT−563 SOT−563 (Pb−Free) SOT−563 SOT−563 (Pb−Free) SOT−563 SOT−563 (Pb−Free) SOT−563 SOT−563 (Pb−Free) Shipping† 4000 Units / Tape & Reel 4000 Units / Tape & Reel 8000 Units / Tape & Reel 8000 Units / Tape & Reel 4000 Units / Tape & Reel 4000 Units / Tape & Reel 8000 Units / Tape & Reel 8000 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 TYPICAL CHARACTERISTICS 1000 800 700 600 500 400 300 200 100 0 0.001 0.01 0.1 1 25°C 150°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 900 hFE, DC CURRENT GAIN VCE = 1 V 0.30 IC/IB = 20 0.25 0.20 0.15 0.10 −55°C 0.05 0 25°C 150°C −55°C 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.1 1.0 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 150°C −55°C 25°C IC/IB = 20 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current VCE = 5 V −55°C 25°C 150°C 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current http://onsemi.com 3 BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 TYPICAL CHARACTERISTICS 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA θVB, TEMPERATURE COEFFICIENT (mV/ °C) 1.0 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.4 0 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 5. Collector Saturation Region 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25°C f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200 Figure 6. Base−Emitter Temperature Coefficient 3.0 Cob 2.0 100 80 60 40 30 20 0.5 0.7 VCE = 10 V TA = 25°C 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 7. Capacitances 1 IC, COLLECTOR CURRENT (A) Figure 8. Current−Gain − Bandwidth Product 100 mS 0.1 1S 10 mS 1 mS Thermal Limit 0.01 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 9. Safe Operating Area http://onsemi.com 4 BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 D −X− 6 5 4 A L 1 2 3 E −Y− b HE DIM A b C D E e L HE e 5 6 PL M C XY 0.08 (0.003) STYLE 1: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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