BC856BLT1G

BC856ALT1G Series General Purpose Transistors PNP Silicon Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Emitter Voltage BC856 BC857 BC858, BC859 BC856 BC857 BC858, BC859 Symbol VCEO Value −65 −45 −30 −80 −50 −30 −5.0 −100 Unit V 2 EMITTER 3 V 1 2 V mAdc SOT−23 (TO−236AB) CASE 318 STYLE 6 Collector-Base Voltage VCBO Emitter−Base Voltage Collector Current − Continuous VEBO IC Symbol PD THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Max 225 1.8 556 Unit MARKING DIAGRAM mW mW/°C °C/W 1 300 2.4 417 − 55 to +150 mW mW/°C °C/W °C = Device Code xx = (Refer to page 6) M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. xx xx M G G RqJA PD RqJA TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 11 1 Publication Order Number: BC856ALT1/D BC856ALT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = −10 mA) Collector − Emitter Breakdown Voltage (IC = −10 mA, VEB = 0) Collector − Base Breakdown Voltage (IC = −10 mA) Emitter − Base Breakdown Voltage (IE = −1.0 mA) BC856 Series BC857 Series BC858, BC859 Series BC856 Series BC857A, BC857B Only BC858, BC859 Series BC856 Series BC857 Series BC858, BC859 Series BC856 Series BC857 Series BC858, BC859 Series V(BR)CEO −65 −45 −30 −80 −50 −30 −80 −50 −30 −5.0 −5.0 −5.0 − − − − − 125 220 420 VCE(sat) − − − − −0.6 − 100 − − − − − − − − − − − − − − − 90 150 270 180 290 520 − − −0.7 −0.9 − − − − − − − − − − − − − − − − −15 −4.0 − − − 250 475 800 V −0.3 −0.65 V − − V −0.75 −0.82 − 4.5 MHz pF dB − − − − 10 4.0 V Symbol Min Typ Max Unit V(BR)CES V V(BR)CBO V V(BR)EBO V Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = −10 mA, VCE = −5.0 V) (IC = −2.0 mA, VCE = −5.0 V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC857C, BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C ICBO nA mA − hFE Collector − Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) Base − Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) Base − Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 V, f = 1.0 MHz) Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) BC856, BC857, BC858 Series BC859 Series VBE(sat) VBE(on) fT Cob NF http://onsemi.com 2 BC856ALT1G Series BC857/BC858/BC859 2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = -10 V TA = 25°C V, VOLTAGE (VOLTS) -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) -100 -200 0 -0.1 -0.2 VCE(sat) @ IC/IB = 10 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 VBE(on) @ VCE = -10 V TA = 25°C VBE(sat) @ IC/IB = 10 0.3 Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages -2.0 θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25°C -1.6 1.0 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 -1.2 IC = -10 mA IC = -20 mA IC = -50 mA IC = -200 mA IC = -100 mA -0.8 -0.4 0 -0.02 -0.1 -1.0 IB, BASE CURRENT (mA) -10 -20 -0.2 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 3. Collector Saturation Region f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 4. Base−Emitter Temperature Coefficient 10 Cib 7.0 C, CAPACITANCE (pF) 5.0 Cob TA = 25°C 400 300 200 150 100 80 60 40 30 20 -0.5 VCE = -10 V TA = 25°C 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current−Gain − Bandwidth Product http://onsemi.com 3 BC856ALT1G Series BC856 -1.0 hFE, DC CURRENT GAIN (NORMALIZED) VCE = -5.0 V TA = 25°C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TJ = 25°C -0.8 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 0 -0.2 VCE(sat) @ IC/IB = 10 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -0.5 -5.0 -10 -20 -50 -100 -200 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) -0.1 -0.2 Figure 7. DC Current Gain Figure 8. “On” Voltage VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) -2.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) -1.0 -1.6 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -1.4 -1.2 -1.8 qVB for VBE -55°C to 125°C -0.8 -2.2 -0.4 TJ = 25°C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 -20 -2.6 -3.0 -0.2 -0.5 -1.0 -5.0 -10 -20 -50 -2.0 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 9. Collector Saturation Region Figure 10. Base−Emitter Temperature Coefficient f T, CURRENT-GAIN - BANDWIDTH PRODUCT 40 TJ = 25°C C, CAPACITANCE (pF) 20 Cib 500 VCE = -5.0 V 200 100 50 10 8.0 6.0 4.0 2.0 -0.1 -0.2 Cob 20 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -50 -100 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current−Gain − Bandwidth Product http://onsemi.com 4 BC856ALT1G Series 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 ZqJC(t) = r(t) RqJC RqJC = 83.3°C/W MAX ZqJA(t) = r(t) RqJA RqJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 500 1.0 k 2.0 k 5.0 k 10 k D = 0.5 0.2 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) SINGLE PULSE 0.2 0.5 1.0 2.0 5.0 10 20 t, TIME (ms) 50 100 200 Figure 13. Thermal Response -200 1s IC, COLLECTOR CURRENT (mA) -100 -50 TA = 25°C TJ = 25°C 3 ms -10 -5.0 -2.0 -1.0 BC558, BC559 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. Figure 14. Active Region Safe Operating Area http://onsemi.com 5 BC856ALT1G Series ORDERING INFORMATION Device BC856ALT1G BC856ALT3G BC856BLT1G BC856BLT3G BC857ALT1G BC857BLT1G BC857BLT3G BC857CLT1G BC857CLT3G BC858ALT1G BC858BLT1G BC858BLT3G BC858CLT1G BC858CLT3G BC859BLT1G BC859BLT3G BC859CLT1G BC859CLT3G 4C 4B 3G 3F 3B 3A Marking Package SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) 3L SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) Shipping† 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 3E 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 3J 3K 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 BC856ALT1G Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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