BC856BM3T5G

BC856BM3T5G Preferred Devices General Purpose Transistor PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT−723 which is designed for low power surface mount applications. • This is a Pb−Free Device MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −65 −80 −5.0 −100 Unit V V V mA 1 BASE 2 EMITTER http://onsemi.com COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2) Junction and Storage Temperature Range Symbol PD Max 265 Unit mW 2 2.1 RqJA PD 470 640 mW/°C °C/W mW 1 3 SOT−723 CASE 631AA STYLE 1 MARKING DIAGRAM 3B M 3B = Specific Device Code M = Date Code ORDERING INFORMATION 5.1 RqJA TJ, Tstg 195 −55 to +150 mW/°C °C/W °C Device BC856BM3T5G Package SOT−723 (Pb−Free) Shipping† 8000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 March, 2006 − Rev. 1 Publication Order Number: BC856BM3/D BC856BM3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mA) Collector −Emitter Breakdown Voltage (IC = −10 mA, VEB = 0) Collector −Base Breakdown Voltage (IC = −10 mA) Emitter −Base Breakdown Voltage (IE = −1.0 mA) Collector Cutoff Current (VCB = −30 V) (VCB = −30 V, TA = 150°C) V(BR)CEO −65 V(BR)CES −80 V(BR)CBO −80 V(BR)EBO −5.0 ICBO − − − − − − −15 −4.0 nA mA − − V − − V − − V V ON CHARACTERISTICS DC Current Gain (IC = −10 mA, VCE = −5.0 V) (IC = −2.0 mA, VCE = −5.0 V) Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) Collector −Emitter Saturation Voltage (IC = −100 mA, IB = −5.0 mA) Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) Base −Emitter Saturation Voltage (IC = −100 mA, IB = −5.0 mA) Base −Emitter Voltage (IC = −2.0 mA, VCE = −5.0 V) Base −Emitter Voltage (IC = −10 mA, VCE = −5.0 V) hFE − 220 VCE(sat) VBE(sat) VBE(on) − − − − −0.6 − 150 290 − − −0.7 −0.9 − − − 475 −0.3 −0.65 − − −0.75 −0.82 V V mV − SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 V, f = 1.0 MHz) Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) fT 100 Cobo − NF − − 10 − 4.5 dB − − pF MHz http://onsemi.com 2 BC856BM3T5G TYPICAL CHARACTERISTICS −1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = −5.0 V TA = 25°C 2.0 1.0 0.5 0.2 −0.1 −0.2 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) TJ = 25°C −0.8 −0.6 −0.4 −0.2 VCE(sat) @ IC/IB = 10 0 −0.2 −0.5 −50 −100 −200 −5.0 −10 −20 −1.0 −2.0 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE @ VCE = −5.0 V Figure 1. DC Current Gain −2.0 −1.6 −1.2 −0.8 −0.4 TJ = 25°C 0 −0.02 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 IB, BASE CURRENT (mA) −5.0 −10 −20 IC = −10 mA −20 mA −50 mA −100 mA −200 mA −1.0 −1.4 −1.8 −2.2 −2.6 −3.0 −0.2 Figure 2. “On” Voltage VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) θVB, TEMPERATURE COEFFICIENT (mV/ °C) qVB for VBE −55°C to 125°C −0.5 −1.0 −50 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mA) −100 −200 Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient f T, CURRENT−GAIN − BANDWIDTH PRODUCT 40 TJ = 25°C Cib 500 200 100 50 20 VCE = −5.0 V C, CAPACITANCE (pF) 20 10 8.0 6.0 4.0 2.0 −0.1 −0.2 Cob −0.5 −1.0 −2.0 −5.0 −10 −20 VR, REVERSE VOLTAGE (VOLTS) −50 −100 −100 −1.0 −10 IC, COLLECTOR CURRENT (mA) Figure 5. Capacitance Figure 6. Current−Gain − Bandwidth Product http://onsemi.com 3 BC856BM3T5G PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D b1 −Y− 3 A E 1 2 L C HE DIM A b b1 C D E e HE L e b 2X 0.08 (0.0032) X Y STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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