BC856B, BC857B, BC858A
General Purpose
Transistors
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
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COLLECTOR
3
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
•
1
BASE
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2
EMITTER
3
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Collector-Emitter Voltage
1
Value
Unit
VCEO
Collector-Base Voltage
MARKING DIAGRAM
VCBO
Emitter−Base Voltage
V
−80
−50
−30
BC856
BC857
BC858
−5.0
V
IC
−100
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
PD
150
mW
RqJA
883
°C/W
TJ, Tstg
−55 to +150
°C
THERMAL CHARACTERISTICS
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
XX M G
G
1
VEBO
Collector Current − Continuous
2
V
−65
−45
−30
BC856
BC857
BC858
SC−70/SOT−323
CASE 419
STYLE 3
XX = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 4
1
Publication Order Number:
BC856BWT1/D
BC856B, BC857B, BC858A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
BC856
BC857
BC858
V(BR)CEO
−65
−45
−30
−
−
−
−
−
−
V
Collector −Emitter Breakdown Voltage
(IC = −10 mA, VEB = 0)
BC856
BC857
BC858
V(BR)CES
−80
−50
−30
−
−
−
−
−
−
V
Collector −Base Breakdown Voltage
(IC = −10 mA)
BC856
BC857
BC858
V(BR)CBO
−80
−50
−30
−
−
−
−
−
−
V
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
BC856
BC857
BC858
V(BR)EBO
−5.0
−5.0
−5.0
−
−
−
−
−
−
V
ICBO
−
−
−
−
−15
−4.0
nA
mA
hFE
−
−
−
90
150
270
−
−
−
−
125
220
420
180
290
520
250
475
800
−
−
−
−
−0.3
−0.65
−
−
−0.7
−0.9
−
−
−0.6
−
−
−
−0.75
−0.82
fT
100
−
−
MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Cob
−
−
4.5
pF
Noise Figure
(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
NF
−
−
10
dB
Collector Cutoff Current (VCB = −30 V)
Collector Cutoff Current (VCB = −30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mA, VCE = −5.0 V)
(IC = −2.0 mA, VCE = −5.0 V)
BC856A, BC585A
BC856B, BC857B, BC858B
BC857C
BC856A, BC858A
BC856B, BC857B, BC858B
BC857C
Collector −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −10 mA, IB = −0.5 mA)
(IC = −100 mA, IB = −5.0 mA)
VBE(sat)
Base −Emitter On Voltage
(IC = −2.0 mA, VCE = −5.0 V)
(IC = −10 mA, VCE = −5.0 V)
VBE(on)
V
V
V
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
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2
BC856B, BC857B, BC858A
BC857/BC858
-1.0
1.5
TA = 25°C
-0.9
VCE = -10 V
TA = 25°C
VBE(sat) @ IC/IB = 10
-0.8
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
1.0
0.7
0.5
-0.7
VBE(on) @ VCE = -10 V
-0.6
-0.5
-0.4
-0.3
-0.2
0.3
VCE(sat) @ IC/IB = 10
-0.1
0.2
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50
IC, COLLECTOR CURRENT (mAdc)
0
-0.1 -0.2
-100 -200
Figure 1. Normalized DC Current Gain
1.0
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
TA = 25°C
-1.6
-1.2
IC =
-10 mA
IC = -50 mA
IC = -200 mA
IC = -100 mA
IC = -20 mA
-0.4
0
-0.02
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-10 -20
-0.1
-1.0
IB, BASE CURRENT (mA)
-0.2
10
Cib
7.0
TA = 25°C
5.0
Cob
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-10
-1.0
IC, COLLECTOR CURRENT (mA)
-100
Figure 4. Base−Emitter Temperature Coefficient
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 3. Collector Saturation Region
C, CAPACITANCE (pF)
-100
-50
Figure 2. “Saturation” and “On” Voltages
-2.0
-0.8
-0.5 -1.0 -2.0
-5.0 -10 -20
IC, COLLECTOR CURRENT (mAdc)
-20 -30 -40
400
300
200
150
VCE = -10 V
TA = 25°C
100
80
60
40
30
20
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
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3
BC856B, BC857B, BC858A
BC856
TJ = 25°C
VCE = -5.0 V
TA = 25°C
-0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
-1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
-0.6
VBE @ VCE = -5.0 V
-0.4
-0.2
0.2
VCE(sat) @ IC/IB = 10
0
-0.2
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (mA)
-0.1 -0.2
-0.5
-50 -100 -200
-5.0 -10 -20
-1.0 -2.0
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
-2.0
-1.0
-1.6
-1.2
IC =
-10 mA
-20 mA
-50 mA
-100 mA -200 mA
-0.8
-0.4
TJ = 25°C
0
-0.02
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
IB, BASE CURRENT (mA)
-5.0
-10
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
-20
-1.4
-1.8
-2.6
-3.0
-0.2
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TJ = 25°C
Cib
10
8.0
Cob
4.0
2.0
-0.1 -0.2
-0.5
-1.0 -2.0
-5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
-0.5 -1.0
-50
-2.0
-5.0 -10 -20
IC, COLLECTOR CURRENT (mA)
-100 -200
Figure 10. Base−Emitter Temperature Coefficient
40
6.0
-55°C to 125°C
-2.2
Figure 9. Collector Saturation Region
20
qVB for VBE
VCE = -5.0 V
500
200
100
50
20
-100
-1.0
-10
IC, COLLECTOR CURRENT (mA)
-50 -100
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
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4
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
BC856B, BC857B, BC858A
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
ZqJC(t) = r(t) RqJC
RqJC = 83.3°C/W MAX
ZqJA(t) = r(t) RqJA
RqJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
P(pk)
SINGLE PULSE
t1
t2
0.03
DUTY CYCLE, D = t1/t2
0.02
0.01
0.1
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
1.0k
2.0k
5.0k 10k
Figure 13. Thermal Response
The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse curves
are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C.
TJ(pk) may be calculated from the data in Figure 13. At
high case or ambient temperatures, thermal limitations
will reduce the power that can be handled to values less
than the limitations imposed by the secondary breakdown.
-200
IC, COLLECTOR CURRENT (mA)
1s
3 ms
-100
TA = 25°C
-50
TJ = 25°C
BC858
BC857
BC856
-10
-5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-2.0
-1.0
-5.0
-10
-30 -45 -65 -100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
ORDERING INFORMATION
Device
Marking
Package
Shipping†
3B
SC−70/SOT−323
(Pb−Free)
3,000 / Tape & Reel
3F
SC−70/SOT−323
(Pb−Free)
3,000 / Tape & Reel
3G
SC−70/SOT−323
(Pb−Free)
3,000 / Tape & Reel
3J
SC−70/SOT−323
(Pb−Free)
3,000 / Tape & Reel
3K
SC−70/SOT−323
(Pb−Free)
3,000 / Tape & Reel
BC856BWT1G
SBC856BWT1G*
BC857BWT1G
SBC857BWT1G*
BC857CWT1G
NSVBC857CWT1G*
BC858AWT1G
BC858BWT1G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
DATE 11 NOV 2008
SCALE 4:1
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
0.016
0.010
0.087
0.053
0.055
0.022
0.095
XX MG
G
SOLDERING FOOTPRINT*
0.65
0.025
1
XX
M
G
1.9
0.075
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.9
0.035
SCALE 10:1
0.008
0.079
MAX
0.040
0.004
GENERIC
MARKING DIAGRAM
L
0.7
0.028
0.012
0.004
0.071
0.045
0.047
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
c
A2
A1
0.65
0.025
MIN
0.032
0.000
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 1:
CANCELLED
STYLE 6:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 7:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE-CATHODE
98ASB42819B
SC−70 (SOT−323)
STYLE 11:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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