BCP68T1G

BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current • The SOT−223 Package Can Be Soldered Using Wave or Reflow • SOT−223 package ensures level mounting, resulting in improved • • • http://onsemi.com MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die The PNP Complement is BCP69T1 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 2,4 BASE 1 EMITTER 3 4 1 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCEO 20 Vdc Collector−Base Voltage VCBO 25 Vdc Emitter−Base Voltage VEBO 5.0 Vdc IC 1.0 Adc ICM 3.0 Adc IB 0.4 Adc Base Current − Peak IBM 0.4 Adc Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C PD 1.5 12 W mW/°C −65 to 150 °C Rating Collector Current Collector Current − Peak (Note 2) Base Current − Continuous Operating and Storage Temperature Range TJ, Tstg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. 2. Reference SOA curve for IC peak. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient (Surface Mounted) RqJA 83.3 °C/W TL 260 °C 10 Sec Lead Temperature for Soldering, 0.0625 in from case Time in Solder Bath © Semiconductor Components Industries, LLC, 2014 January, 2014 − Rev. 9 1 2 3 SOT−223 CASE 318E STYLE 1 MARKING DIAGRAM AYW CA G G CA = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† BCP68T1G SOT−223 (Pb−Free) 1,000/Tape & Reel SBCP68T1G* SOT−223 (Pb−Free) 1,000/Tape & Reel BCP68T3G SOT−223 (Pb−Free) 4,000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BCP68T1/D BCP68T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristics Min Typ Max 25 − − 20 − − 5.0 − − − − 10 − − 10 50 85 60 − − − − 375 − − − 0.5 − − 1.0 − 60 − Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CES Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector−Base Cutoff Current (VCB = 25 Vdc, IE = 0) ICBO Emitter−Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS hFE DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 1.0 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS fT Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc) MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 15 − pF Output Capacitance (VEB = 5 Vdc, IE = 0, f = 1.0 MHz) Cibo − 145 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 300 200 f, T CURRENT‐GAIN‐BANDWIDTH PRODUCT (MHz) hFE, DC CURRENT GAIN TYPICAL ELECTRICAL CHARACTERISTICS TJ = 125°C = 25°C 100 = - 55°C VCE = 1.0 V 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000 300 200 100 70 VCE = 10 V TJ = 25°C f = 30 MHz 50 30 10 Figure 1. DC Current Gain 100 200 IC, COLLECTOR CURRENT (mA) Figure 2. Current-Gain-Bandwidth Product http://onsemi.com 2 1000 BCP68T1G TYPICAL ELECTRICAL CHARACTERISTICS 80 TJ = 25°C TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 70 Cib, CAPACITANCE (pF) V, VOLTAGE (VOLTS) 1.0 0.4 0.2 0 50 40 VCE(sat) @ IC/IB = 10 1.0 60 30 10 100 1000 IC, COLLECTOR CURRENT (mA) 0 Figure 3. “On” Voltage RθVB, TEMPERATURE COEFFICIENT (mV/°C) Cob, CAPACITANCE (pF) TJ = 25°C 20 15 10 0 2.0 3.0 4.0 VR, REVERSE VOLTAGE (V) 5.0 Figure 4. Capacitance 25 5.0 1.0 5.0 10 15 VR, REVERSE VOLTAGE (V) 20 -0.8 -1.2 -1.6 RqVB for VBE -2.0 -2.4 -2.8 1.0 Figure 5. Capacitance 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 6. Base−Emitter Temperature Coefficient 10 1.0 IC, COLLECTOR CURRENT (A) VCE , COLLECTOR VOLTAGE (V) TJ = 25°C 0.8 0.6 0.4 = 1000 mA I C = 10 mA = 50 mA = 100 mA 0.2 0 0.01 = 500 mA 0.1 1.0 10 IB, BASE CURRENT (mA) 100 ms 1 0.1 100 1 ms 1 Figure 7. Saturation Region 10 ms 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 8. Safe Operating Area http://onsemi.com 3 100 BCP68T1G 310 300 290 280 270 260 250 240 230 220 210 200 190 180 170 160 150 140 130 50 TJ = 25°C f = 1 MHz TJ = 25°C f = 1 MHz 45 Cob, CAPACITANCE (pF) Cib, CAPACITANCE (pF) TYPICAL ELECTRICAL CHARACTERISTICS 40 35 30 25 20 15 10 5 0 1 2 3 VR, REVERSE VOLTAGE (V) 4 0 5 0 Figure 9. Input Capacitance 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 10. Output Capacitance http://onsemi.com 4 25 BCP68T1G PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE 1 2 3 b e1 e A1 C q A 0.08 (0003) DIM A A1 b b1 c D E e e1 L L1 HE E MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0° q L STYLE 1: PIN 1. 2. 3. 4. L1 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 −−− −−− 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 −−− 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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