BCP69T1G

BCP69T1 PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features http://onsemi.com • High Current: IC = −1.0 A • The SOT−223 Package can be soldered using wave or reflow. • SOT−223 package ensures level mounting, resulting in improved • • thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. NPN Complement is BCP68 Pb−Free Package is Available MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT COLLECTOR 2,4 BASE 1 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value − 20 − 25 − 5.0 −1.0 1.5 12 − 65 to 150 Unit Vdc Vdc Vdc Adc W mW/°C °C 1 EMITTER 3 4 2 3 MARKING DIAGRAM AYW CEG G SOT−223 (TO−261) CASE 318E STYLE 1 CE A Y W G THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Ambient (Surface Mounted) Lead Temperature for Soldering, 0.0625 in from case Time in Solder Bath Symbol RqJA TL Max 83.3 260 10 Unit °C/W °C Sec = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. ORDERING INFORMATION Device BCP69T1 BCP69T1G Package SOT−223 SOT−223 (Pb−Free) Shipping† 1000 / Tape & Reel 1000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 October, 2008 − Rev. 8 1 Publication Order Number: BCP69T1/D BCP69T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = −100 mAdc, IE = 0) Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) Collector−Base Cutoff Current (VCB = − 25 Vdc, IE = 0) Emitter−Base Cutoff Current (VEB = − 5.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = − 5.0 mAdc, VCE = −10 Vdc) (IC = − 500 mAdc, VCE = −1.0 Vdc) (IC = −1.0 Adc, VCE = −1.0 Vdc) Collector−Emitter Saturation Voltage (IC = −1.0 Adc, IB = −100 mAdc) Base−Emitter On Voltage (IC = −1.0 Adc, VCE = −1.0 Vdc) DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −10 mAdc, VCE = − 5.0 Vdc) fT − 60 − MHz hFE 50 85 60 − − − − − − − − 375 − − 0.5 −1.0 − V(BR)CES V(BR)CEO V(BR)EBO ICBO IEBO − 25 − 20 − 5.0 − − − − − − − − − − −10 −10 Vdc Vdc Vdc mAdc mAdc Symbol Min Typ Max Unit VCE(sat) VBE(on) Vdc Vdc http://onsemi.com 2 BCP69T1 TYPICAL ELECTRICAL CHARACTERISTICS 200 f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) 300 200 hFE , CURRENT GAIN 100 70 50 VCE = -1.0 V TJ = 25°C 100 70 50 VCE = -10 V TJ = 25°C f = 30 MHz 20 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 30 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 Figure 1. DC Current Gain -1.0 - 0.8 V, VOLTAGE (VOLTS) TJ = 25°C V(BE)sat @ IC/IB = 10 C, CAPACITANCE (pF) 160 Figure 2. Current Gain Bandwidth Product TJ = 25°C 120 - 0.6 V(BE)on @ VCE = -1.0 V 80 Cib 40 Cob 0 Cob Cib - 5.0 -1.0 -1.0 - 2.0 -1.5 - 3.0 - 2.0 - 4.0 - 2.5 - 5.0 - 0.4 - 0.2 V(CE)sat @ IC/IB = 10 0 -1.0 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) Figure 3. Saturation and “ON” Voltages VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitances 10 10 ms IC, COLLECTOR CURRENT (A) 1s 1.0 Thermal Limit 100 ms 1 ms 0.1 Single Pulse Test @ TA = 25°C 0.01 0.1 1.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) 100 Figure 5. Safe Operating Area http://onsemi.com 3 BCP69T1 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE M D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 1 0° − INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 − 4 HE E 1 2 3 e1 b e A q L1 C DIM A A1 b b1 c D E e e1 L1 HE q MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 1 0° 0.08 (0003) A1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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