BCW30LT1D

BCW30LT1G General Purpose Transistors PNP Silicon Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE Symbol VCEO VCBO VEBO IC Value −32 −32 −5.0 −100 Unit Vdc Vdc Vdc mAdc 1 Symbol PD Value 225 1.8 RqJA PD 556 300 mW/°C °C/W mW 1 C2 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Unit mW 2 SOT−23 (TO−236AB) CASE 318−08 STYLE 6 3 2 EMITTER MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter-Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature MARKING DIAGRAM C2 M G G 2.4 RqJA TJ, Tstg 417 −55 to +150 mW/°C °C/W °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. ORDERING INFORMATION Device BCW30LT1G Package SOT−23 (Pb−Free) Shipping 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 2 1 Publication Order Number: BCW30LT1/D BCW30LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = −2.0 mAdc, IE = 0) Collector−Emitter Breakdown Voltage (IC = −100 mAdc, VEB = 0) Collector−Base Breakdown Voltage (IC = −10 mAdc, IC = 0) Emitter−Base Breakdown Voltage (IE = −10 mAdc, IC = 0) Collector Cutoff Current (VCB = −32 Vdc, IE = 0) (VCB = −32 Vdc, IE = 0, TA = 100°C) ON CHARACTERISTICS DC Current Gain (IC = −2.0 mAdc, VCE = −5.0 Vdc) Collector−Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.5 mAdc) Base−Emitter On Voltage (IC = −2.0 mAdc, VCE = −5.0 Vdc) SMALL−SIGNAL CHARACTERISTICS Output Capacitance (IE = 0, VCB = −10 Vdc, f = 1.0 MHz) Noise Figure (IC = −0.2 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) Cobo NF − 10 pF − 7.0 dB hFE VCE(sat) VBE(on) 215 − −0.6 500 −0.3 Vdc −0.75 − Vdc V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO −32 −32 −32 −5.0 − − − − Vdc Vdc Vdc Vdc Symbol Min Max Unit − − −100 −10 nAdc mAdc TYPICAL NOISE CHARACTERISTICS (VCE = − 5.0 Vdc, TA = 25°C) 10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 mA 30 mA 3.0 2.0 1.0 mA 100 mA 300 mA BANDWIDTH = 1.0 Hz RS ≈ 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 mA 100 mA 30 mA 10 mA IC = 1.0 mA BANDWIDTH = 1.0 Hz RS ≈ ∞ Figure 1. Noise Voltage Figure 2. Noise Current http://onsemi.com 2 BCW30LT1G NOISE FIGURE CONTOURS (VCE = − 5.0 Vdc, TA = 25°C) 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS) 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k RS , SOURCE RESISTANCE (OHMS) BANDWIDTH = 1.0 Hz Figure 3. Narrow Band, 100 Hz Figure 4. Narrow Band, 1.0 kHz 1.0 M 500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 10 Hz to 15.7 kHz Noise Figure is Defined as: NF + 20 log10 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (mA) en2 ) 4KTRS ) In 2RS2 1 2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10−23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) Figure 5. Wideband http://onsemi.com 3 BCW30LT1G TYPICAL STATIC CHARACTERISTICS 500 TJ = 125°C 25°C h FE, DC CURRENT GAIN 300 - 55°C 200 180 160 140 0.003 0.005 BCW29LT1 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 6. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA IC, COLLECTOR CURRENT (mA) TA = 25°C BCW29LT1 100 TA = 25°C PULSE WIDTH = 300 ms 80 DUTY CYCLE ≤ 2.0% 300 mA 60 IB = 400 mA 350 mA 250 mA 200 mA 150 mA 0.6 0.4 40 100 mA 50 mA 0.2 20 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 7. Collector Saturation Region Figure 8. Collector Characteristics TJ = 25°C θV, TEMPERATURE COEFFICIENTS (mV/ °C) 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 *qVC for VCE(sat) 0 - 55°C to 25°C 0.8 25°C to 125°C 1.6 qVB for VBE 0.2 - 55°C to 25°C 50 100 25°C to 125°C VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 2.4 0.1 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 9. “On” Voltages Figure 10. Temperature Coefficients http://onsemi.com 4 BCW30LT1G TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25°C 1000 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 -1.0 ts VCC = - 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, TIME (ns) tf 2.0 20 30 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 11. Turn−On Time f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) Figure 12. Turn−Off Time 500 TJ = 25°C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF) 10 TJ = 25°C 7.0 Cib 5.0 3.0 2.0 Cob 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 13. Current−Gain — Bandwidth Product Figure 14. Capacitance 20 10 hie , INPUT IMPEDANCE (k Ω ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hfe ≈ 300 @ IC = -1.0 mA hoe, OUTPUT ADMITTANCE ( m mhos) VCE = -10 Vdc f = 1.0 kHz TA = 25°C 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25°C hfe ≈ 300 @ IC = 1.0 mA Figure 15. Input Impedance Figure 16. Output Admittance http://onsemi.com 5 BCW30LT1G r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 P(pk) 0.02 0.01 t1 SINGLE PULSE t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZqJA(t) = r(t) • RqJA TJ(pk) - TA = P(pk) ZqJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5 0.2 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 500 1.0 k 2.0 k Figure 17. Thermal Response 104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 10-1 10-2 ICEO DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 17 by the steady state value RqJA. Example: The BCW29LT1 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN−569. ICBO AND ICEX @ VBE(off) = 3.0 V -4 0 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) Figure 18. Typical Collector Leakage Current http://onsemi.com 6 BCW30LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 D SEE VIEW C 3 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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