BCW32LT1

BCW32LT1G General Purpose Transistors NPN Silicon Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 Unit Vdc Vdc Vdc mAdc 1 2 SOT−23 (TO−236AB) CASE 318 STYLE 6 3 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Value 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW/°C °C/W mW mW/°C °C/W °C Unit mW MARKING DIAGRAM D2 M G G 1 D2 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. ORDERING INFORMATION Device BCW32LT1G Package SOT−23 (Pb−Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 2 1 Publication Order Number: BCW32LT1/D BCW32LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) Collector − Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 32 Vdc, IE = 0) (VCB = 32 Vdc, IE = 0, TA = 100°C) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 32 32 5.0 − − − − − − Vdc Vdc Vdc − − − − 100 10 nAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector − Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) Base − Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE VCE(sat) VBE(on) − 200 − 0.55 − − − 450 Vdc 0.25 Vdc 0.70 SMALL− SIGNAL CHARACTERISTICS Output Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) Cobo NF − − − − 4.0 10 pF dB TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 mA BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 mA 10 mA IC = 1.0 mA 300 mA 100 mA BANDWIDTH = 1.0 Hz RS ≈ ∞ 10 7.0 5.0 10 mA 3.0 100 mA 30 mA Figure 1. Noise Voltage Figure 2. Noise Current http://onsemi.com 2 BCW32LT1G NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25°C) 500 k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k BANDWIDTH = 1.0 Hz 1M 500 k 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k BANDWIDTH = 1.0 Hz 2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB Figure 3. Narrow Band, 100 Hz Figure 4. Narrow Band, 1.0 kHz 500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 10 Hz to 15.7 kHz Noise Figure is defined as: NF + 20 log10 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k en2 ) 4KTRS ) In 2RS2 1 2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) I = Noise Current of the Transistor referred to the input. n (Figure 4) K = Boltzman’s Constant (1.38 x 10−23 j/°K) T = Temperature of the Source Resistance (°K) R = Source Resistance (W) S IC, COLLECTOR CURRENT (mA) Figure 5. Wideband http://onsemi.com 3 BCW32LT1G TYPICAL STATIC CHARACTERISTICS 400 TJ = 125°C h FE, DC CURRENT GAIN 200 25°C - 55°C 100 80 60 40 0.004 0.006 0.01 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 Figure 6. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C IC, COLLECTOR CURRENT (mA) 100 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA TA = 25°C PULSE WIDTH = 300 ms 80 DUTY CYCLE ≤ 2.0% IB = 500 mA 400 mA 300 mA 200 mA 0.6 60 0.4 40 100 mA 20 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 7. Collector Saturation Region Figure 8. Collector Characteristics TJ = 25°C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10 θV, TEMPERATURE COEFFICIENTS (mV/ °C) 1.4 1.6 0.8 *APPLIES for IC/IB ≤ hFE/2 25°C to 125°C *qVC for VCE(sat) - 55°C to 25°C 0 - 0.8 25°C to 125°C - 1.6 qVB for VBE - 2.4 0.1 0.2 - 55°C to 25°C 50 100 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 9. “On” Voltages Figure 10. Temperature Coefficients http://onsemi.com 4 BCW32LT1G TYPICAL DYNAMIC CHARACTERISTICS 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TJ = 25°C f = 1.0 MHz Cob 3.0 2.0 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance http://onsemi.com 5 BCW32LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 D SEE VIEW C 3 E 1 2 HE e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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