BCW32LT1G General Purpose Transistors
NPN Silicon
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• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR 3 1 BASE Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 Unit Vdc Vdc Vdc mAdc 1 2 SOT−23 (TO−236AB) CASE 318 STYLE 6 3 2 EMITTER
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Value 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW/°C °C/W mW mW/°C °C/W °C Unit mW
MARKING DIAGRAM
D2 M G G 1 D2 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device BCW32LT1G Package SOT−23 (Pb−Free) Shipping† 3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 2
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Publication Order Number: BCW32LT1/D
BCW32LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) Collector − Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 32 Vdc, IE = 0) (VCB = 32 Vdc, IE = 0, TA = 100°C) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 32 32 5.0 − − − − − − Vdc Vdc Vdc
− −
− −
100 10
nAdc mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector − Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) Base − Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE VCE(sat) VBE(on) − 200 − 0.55 − − − 450 Vdc 0.25 Vdc 0.70
SMALL− SIGNAL CHARACTERISTICS
Output Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) Cobo NF − − − − 4.0 10 pF dB
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 mA BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 mA 10 mA IC = 1.0 mA 300 mA 100 mA BANDWIDTH = 1.0 Hz RS ≈ ∞
10 7.0 5.0 10 mA 3.0
100 mA
30 mA
Figure 1. Noise Voltage
Figure 2. Noise Current
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BCW32LT1G
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25°C)
500 k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k BANDWIDTH = 1.0 Hz 1M 500 k 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k
BANDWIDTH = 1.0 Hz
2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100
10 Hz to 15.7 kHz
Noise Figure is defined as: NF + 20 log10 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k en2 ) 4KTRS ) In 2RS2 1 2 4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3) I = Noise Current of the Transistor referred to the input. n (Figure 4) K = Boltzman’s Constant (1.38 x 10−23 j/°K) T = Temperature of the Source Resistance (°K) R = Source Resistance (W)
S
IC, COLLECTOR CURRENT (mA)
Figure 5. Wideband
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BCW32LT1G
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125°C
h FE, DC CURRENT GAIN
200
25°C
- 55°C 100 80 60 40 0.004 0.006 0.01 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
Figure 6. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
TJ = 25°C IC, COLLECTOR CURRENT (mA)
100
0.8 IC = 1.0 mA 10 mA 50 mA 100 mA
TA = 25°C PULSE WIDTH = 300 ms 80 DUTY CYCLE ≤ 2.0%
IB = 500 mA 400 mA 300 mA 200 mA
0.6
60
0.4
40 100 mA 20
0.2
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40
Figure 7. Collector Saturation Region
Figure 8. Collector Characteristics
TJ = 25°C
1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
1.4
1.6 0.8
*APPLIES for IC/IB ≤ hFE/2 25°C to 125°C *qVC for VCE(sat) - 55°C to 25°C
0
- 0.8 25°C to 125°C - 1.6 qVB for VBE - 2.4 0.1 0.2 - 55°C to 25°C 50 100
0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages
Figure 10. Temperature Coefficients
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BCW32LT1G
TYPICAL DYNAMIC CHARACTERISTICS
10 7.0 C, CAPACITANCE (pF) 5.0 Cib TJ = 25°C f = 1.0 MHz
Cob 3.0 2.0
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
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BCW32LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236) CASE 318−08 ISSUE AN
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094
D
SEE VIEW C 3
E
1 2
HE
e
b q
0.25
A A1 L L1 VIEW C
DIM A A1 b c D E e L L1 HE
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035 0.8 0.031
SCALE 10:1 mm inches
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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BCW32LT1/D